Infineon Technologies AG Single FETs, MOSFETs IRLIB4343

N-Channel 55V 19A (Tc) 39W (Tc) Through Hole TO-220AB Full-Pak

MOSFET N-CH 55V 19A TO220AB FP Product overview: IRLIB4343 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLIB4343 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1188557-IRLIB4343
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 39W
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 19A
Rds On (Maximum) at Id, Vgs: 50mOhm at 4.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 740pF at 50V