Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL2703 IRLL2703

Manufacturer: Infineon Technologies
Win Source Part Number: 61484-IRLL2703
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 530pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

MOSFET N-CH 30V 3.9A SOT223 Product overview: IRLL2703 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL2703 can be used for catalog matching and distributor lookup.

N-Channel 30V 3.9A (Ta) 1W (Ta) Surface Mount SOT-223