Manufacturer: Infineon Technologies
Win Source Part Number: 069713-IRLH5034TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Family Name: IRLH5034
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 29A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 150μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 4730pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): RS1G300GNTB; TQM033NB04CR RLG ; TSM025NB04LCR RLG; TSM024NA04LCR RLG;
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
N-Channel 40V 29A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 40V 29A/100A 8PQFN Product overview: IRLH5034TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLH5034TRPBF can be used for catalog matching and distributor lookup.
MOSFET,N CH,40V,100A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 40V 29A/100A 8PQFN
MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms
MOSFET N-CH 40V 29A/100A 8PQFN
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 069713-IRLH5034TRPBF | IRLH5034TRPBFTR-ND | 278-IRLH5034TRPBF | 83R9948 | IRLH5034TRPBF | IRLH5034TRPBF | IRLH5034TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLH5034TRPBF | Single FETs, MOSFETs | 40V 29A 100A MOSFET Transistor | Mosfet,n Ch,40V,100A,pqfn56; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| PD | 3600 to 156000 milliwatts | 250 milliwatts | 3600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PQFN (5x6) | 8-PowerVDFN | Tape & Reel (TR) | TO-3 | 8-PowerVDFN | 8-PowerVDFN |
