Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR2705PBF IRLR2705PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 128788-IRLR2705PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 25nC @ 5V
Max Input Capacitance: 880pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 40 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

N-Channel 55V 28A (Tc) 68W (Tc) Surface Mount D-Pak

MOSFET N-CH 55V 28A DPAK Product overview: IRLR2705PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 28A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 28A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLR2705PBF can be used for catalog matching and distributor lookup.