MOSFET P-CH 20V 2.4A MICRO6
Manufacturer: Infineon Technologies
Win Source Part Number: 017782-IRLMS6702TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 8.8nC @ 4.5V
Max Input Capacitance: 210pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1.6A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
P-Channel 20V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
MOSFET P-CH 20V 2.4A MICRO6 Product overview: IRLMS6702TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS6702TRPBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 2.4A MICRO6
MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.2Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-12V
P CHANNEL MOSFET, -20V, 2.4A MICRO6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRLMS6702TRPBF | 017782-IRLMS6702TRPBF | IRLMS6702PBFTR-ND | 278-IRLMS6702TRPBF | IRLMS6702TRPBF | IRLMS6702TRPBF | 70017447 | 19K8377 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS6702TRPBF | Single FETs, MOSFETs | 20V 2.4A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.2Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-12V | P Channel Mosfet, -20V, 2.4A Micro6; Channel Type Infineon |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | -20 volts | ||||
| IDSS | 2400 milliamps | 2400 milliamps | ||||||
| PD | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts |
