N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)
N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)
N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)
HEXFET N-Ch MOSFET 6.5A 20V Micro6
HEXFET N-Ch MOSFET 6.5A 20V Micro6
HEXFET N-Ch MOSFET 6.5A 20V Micro6
MOSFET N-CH 20V 6.5A MICRO6
MOSFET N-CH 20V 6.5A MICRO6 Product overview: IRLMS2002TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS2002TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017780-IRLMS2002TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Family Name: IRLMS2002
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(SOT23-6)
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 22nC @ 5V
Max Input Capacitance: 1310pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6.5A, 4.5V
Alternative Parts (Cross-Reference): TSM3460CX6 RF; TSM3460CX6; TPC6001(TE85L); TPC6001(TE85L,F);
Introduction Date: January 19, 2005
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl
N CHANNEL MOSFET, 20V, 6.5A, MICRO6; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 6.5A, MICRO6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:2W RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.03Ohm;ID 6.5A;Micro6;PD 2W;VGS +/-12V;-55d
MOSFET N-CH 20V 6.5A MICRO6
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRLMS2002PBFCT-ND | 8303326 | 8303326P | IRLMS2002TRPBF | 278-IRLMS2002TRPBF | 017780-IRLMS2002TRPBF | IRLMS2002TRPBF | 19K8375 | 28X2085 | 70017108 | IRLMS2002TRPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | 20V 6.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS2002TRPBF | MOSFET | N Channel Mosfet, 20V, 6.5A, Micro6; Channel Type Infineon | N Channel Mosfet, 20V, 6.5A, Micro6, Full Reel; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.03Ohm;ID 6.5A;Micro6;PD 2W;VGS +/-12V;-55d | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | SOT23; SOT-23-6 | Micro6 | Micro6 | SOT23; SOT-23-6 | Tape & Reel (TR) | SOT3; SOT23; Micro6(SOT23-6) | TO-3 | TO-3 | Micro6 | Surface Mount | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| Number of units in IC | 1 | ||||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
