Infineon Technologies AG Single FETs, MOSFETs IRLR8113PBF

Description
N-Channel 30V 94A (Tc) 89W (Tc) Surface Mount D-Pak
Request a Quote Datasheet
Description
N-Channel 30V 94A (Tc) 89W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

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Single FETs, MOSFETs - IRLR8113PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR8113PBF-ND
Single FETs, MOSFETs IRLR8113PBF-ND
N-Channel 30V 94A (Tc) 89W (Tc) Surface Mount D-Pak

N-Channel 30V 94A (Tc) 89W (Tc) Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8113PBF - 136288-IRLR8113PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8113PBF
136288-IRLR8113PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8113PBF 136288-IRLR8113PBF
Manufacturer: Infineon Technologies Win Source Part Number: 136288-IRLR8113PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 94A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 32nC @ 4.5V Max Input Capacitance: 2920pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 75

Manufacturer: Infineon Technologies
Win Source Part Number: 136288-IRLR8113PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 94A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 32nC @ 4.5V
Max Input Capacitance: 2920pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 75

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR8113PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR8113PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR8113PBF
MOSFET N-CH 30V 94A DPAK

MOSFET N-CH 30V 94A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLR8113PBF-ND 136288-IRLR8113PBF IRLR8113PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8113PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 30 volts
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