Nexperia B.V. Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name Notes
PMSTA56/8X
PMT200EPEAX
PMT21EN,115
PMV130ENEA/DG/B2R
PMV32UP/MIR
PMXB65ENE147
PMZ250UN,315
PMZ270XN,315
PMZ290UNEYL
PMZ290UNYL
PMZ350XN,315
PMZ420UNYL
PMZ760SN,315
PMZB290UNE,315
PSMN003-30P,127
PSMN004-60B,118
PSMN005-30K,518
PSMN005-75B,118
PSMN005-75P,127
PSMN006-20K,518
PSMN008-75B,118
PSMN009-100B,118
PSMN011-100YSFX
PSMN012-80PS,127
PSMN013-100BS,118
PSMN013-100PS,127
PSMN015-100B,118
PSMN015-100P,127
PSMN015-110P,127
PSMN015-60PS,127
PSMN016-100PS,127
PSMN017-30BL,118
PSMN017-80PS,127
PSMN018-100PSFQ
PSMN022-30BL,118
PSMN022-30PL,127
PSMN025-100D,118
PSMN027-100BS,118
PSMN027-100PS,127
PSMN027-100XS,127
PSMN030-150B,118
PSMN030-150P,127
PSMN034-100PS,127
PSMN035-100LS
PSMN035-150B,118
PSMN038-100K,518
PSMN050-80BS,118
PSMN057-200P,127
PSMN063-150D,118
PSMN070-200B,118
PSMN070-200P
PSMN130-200D,118
PSMN165-200K,518
PSMN1R1-30EL,127
PSMN1R1-30PL,127
PSMN1R5-25YL,115
PSMN1R5-40ES,127
PSMN1R5-40PS,127
PSMN1R6-30BL,118
PSMN1R6-30PL,127
PSMN1R6-40YLC,115
PSMN1R6-40YLC:115
PSMN1R6-60CLJ
PSMN1R8-30BL,118
PSMN1R8-30PL,127
PSMN1R9-40PL,127
PSMN1R9-40PLQ
PSMN2R0-30BL,118
PSMN2R0-30PL,127
PSMN2R0-60PS,127
PSMN2R0-60PSRQ
PSMN2R1-40PLQ
PSMN2R1-60CSJ
PSMN2R2-40BS,118
PSMN2R2-40PS,127
PSMN2R5-60PLQ
PSMN2R7-30PL,127
PSMN2R8-40PS,127
PSMN3R0-60ES,127
PSMN3R0-60PS,127
PSMN3R2-30YLC,115
PSMN3R3-60PLQ
PSMN3R3-80PS,127
PSMN3R4-30PL,127
PSMN3R5-80ES,127
PSMN3R5-80PS,127
PSMN3R9-60PSQ
PSMN4R2-60PLQ
PSMN4R3-100ES,127
PSMN4R3-100PS,127
PSMN4R3-30PL,127
PSMN4R3-80ES,127
PSMN4R4-80PS,127
PSMN4R5-40PS,127
PSMN4R6-60PS,127
PSMN4R8-100PSEQ
PSMN5R0-100ES,127
PSMN5R0-100PS,127
PSMN5R0-80BS,118
PSMN5R0-80PS,127
PSMN5R3-25MLD,115
PSMN5R4-25YLD,115
PSMN5R6-100PS,127
PSMN5R6-100YSFQ
PSMN5R6-100YSFX
PSMN6R3-120ESQ
PSMN6R5-30MLDX
PSMN6R5-80PS,127
PSMN6R9-100YSFX
PSMN7R0-100ES,127
PSMN7R0-100PS,127
PSMN7R6-60PS,127
PSMN7R8-100PSEQ
PSMN7R8-120PSQ
PSMN8R0-40PS,127
PSMN8R5-100PSFQ
PSMN8R5-100PSQ
PSMN8R7-100YSFX
PSMN8R7-80PS,127
PSMN9R5-100PS,127
PSMNR90-40SSHJ
PUMB1/DG/B3,115
PUMB1/DG/B4X
PUMB2/DG/B3,115
PUMB2/DG/B4X
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN3R3-40MLHX
118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN3R3-40MSHX
118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN3R2-40YLDX
120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN3R5-40YSDX
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R5-40YLDX
160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R8-40YSDX
160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R0-40YLDX
180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R2-40YSDX
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R7-40YLDX
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R9-40YSDX
200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E -- PSMN1R5-50YLHX
N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E -- PSMN2R0-55YLHX
200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s...
N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R5-40YSDX
240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology -- PSMN1R4-40YLDX
240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R2-30YLDX
250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs...
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R0-40YLDX
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology -- PSMN1R0-40YSHX
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R9-30YLDX
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-30YLDX
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs...
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology -- PSMNR90-40YLHX
300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology -- PSMN1R0-40SSHJ
325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually...
N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology -- PSMNR70-40SSHJ
425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually...
N-channel 40 V, 6.7 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN6R7-40MLDX
50 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating...
N-channel 40 V, 6.7 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN6R7-40MSDX
50 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology -- PSMNR55-40SSHJ
500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually...
N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN8R5-40MLDX
60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN8R5-40MSDX
60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN5R0-40MLHX
85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN5R0-40MSHX
85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN4R3-40MLHX
95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN4R3-40MSHX
95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) -- PSMN013-40VLDX
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) -- PSMN4R2-40VSHX
Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity Module shrinkage through reduced component count Improved system level Rth(j-amb) due to optimized package design Lower...
N-channel 25 V 0.99 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN0R9-25YLC,115
N-channel 25 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R1-25YLC,115
N-channel 25 V 1.3 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R2-25YLC,115
N-channel 25 V, 2.4 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R2-25YLC,115
N-channel 25 V, 3.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R9-25YLC,115
N-channel 25 V, 4.5 mOhm logic level MOSFET in LFPAK -- PSMN4R0-25YLC,115
N-channel 25 V, 6.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-25YLB,115
N-channel 25 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R5-25YLC,115
N-channel 30 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R0-30YLC,115
N-channel 30 V 1.25mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R2-30YLC,115
N-channel 30 V 1.55mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R5-30YLC,115
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology -- PSMN011-30YLC,115
N-channel 30 V 13.6 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN013-30YLC,115
N-channel 30 V 9.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN9R5-30YLC,115
N-channel 30 V, 2.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R2-30YLC,115
N-channel 30 V, 2.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R6-30YLC,115
N-channel 30 V, 4.35mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN4R1-30YLC,115
N-channel 30 V, 4.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN4R5-30YLC,115
N-channel 30 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-30YLB,115
N-channel 30 V, 7.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN7R0-30YLC,115
N-channel 40 V 1.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R8-40YLC,115
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 25 V 2.8 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN2R8-25MLC,115
N-channel 25 V 4.15 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN3R9-25MLC,115
N-channel 25 V 8.65 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN9R0-25MLC,115
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN013-30MLC,115
N-channel 30 V 2.95 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN2R9-30MLC,115
N-channel 30 V 4.65 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN4R4-30MLC,115
N-channel 30 V 7 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN7R0-30MLC,115
N-channel 30 V 9.8 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN9R8-30MLC,115
N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 -- PSMN011-60MLX
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 30 V, 3.15mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN3R0-30MLC,115
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment Features and benefits...
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 -- PSMN038-100YLX
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 -- PSMN041-80YLX
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and...
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R4-30MLDX
N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN6R4-30MLDX
Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated...
N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R0-25MLDX
N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN3R5-25MLDX
N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN5R3-25MLDX
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN4R2-30MLDX
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN7R5-30MLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN6R1-25MLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology -- PSMN1R5-25MLHX
N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology -- PSMN1R8-30MLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and...
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology -- PSMN1R6-30MLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and...
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology -- PSMNR70-30YLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated...
N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology -- PSMNR60-25YLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated...
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R9-25YLDX
N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-25YLDX
N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R2-25YLDX
N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R7-25YLDX
N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R0-25YLDX
N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN5R4-25YLDX
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R0-25YLDX
N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R4-30YLDX
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R4-30YLDX
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN7R5-30YLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R7-25YLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R0-30YLDX
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN3R0-30YLDX
N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN4R0-30YLDX
N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R0-30YLDX
N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R1-30YLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an...
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology -- PSMNR51-25YLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated...
N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology -- PSMNR58-30YLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated...
N-channel 30 V 2 mOhm logic level MOSFET in LFPAK -- PSMN2R0-30YL,115
N-channel 30 V 2.4 mOhm logic level MOSFET in LFPAK -- PSMN2R5-30YL,115
N-channel 30 V 3 mOhm logic level MOSFET in LFPAK -- PSMN3R0-30YL,115
N-channel 30 V 3.5 mOhm logic level MOSFET in LFPAK -- PSMN3R5-30YL,115
N-channel 30 V 4 mOhm logic level MOSFET in LFPAK -- PSMN4R0-30YL,115
N-channel 30 V 5 mOhm logic level MOSFET in LFPAK -- PSMN5R0-30YL,115
N-channel 30 V 6 mOhm logic level MOSFET in LFPAK -- PSMN6R0-30YL,115
N-channel 30 V 7 mOhm logic level MOSFET in LFPAK -- PSMN7R0-30YL,115
N-channel 9.1 mOhm 30 V TrenchMOS logic level FET in LFPAK -- PSMN9R1-30YL,115
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. Features and...
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 -- PSMN012-100YLX
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 -- PSMN015-100YLX
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 -- PSMN019-100YLX
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56 -- PSMN021-100YLX
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 -- PSMN013-60YLX
N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 -- PSMN4R1-60YLX
N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56 -- PSMN5R2-60YLX
N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 -- PSMN5R6-60YLX
N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56 -- PSMN7R5-60YLX
N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 -- PSMN010-80YLX
N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56 -- PSMN014-80YLX
N-channel 80 V, 25 mOhm logic level MOSFET in LFPAK56 -- PSMN025-80YLX
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 -- PSMN8R0-80YLX
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor...
N-channel 30 V 1.0 mOhm logic level MOSFET in D2PAK -- PSMNR90-30BL,118
N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK -- PSMN1R5-30BLEJ
N-channel 30 V 3.0 mOhm logic level MOSFET in D2PAK -- PSMN2R7-30BL,118
N-channel 30 V 4.1 mOhm logic level MOSFET in D2PAK -- PSMN4R3-30BL,118
N-channel 30 V, 3.4 mOhm logic level MOSFET in D2PAK -- PSMN3R4-30BLE,118
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 25 V 1.2 mOhm logic level MOSFET in LFPAK -- PSMN1R2-25YL,115
N-channel 30 V 1.3 mOhm logic level MOSFET in LFPAK -- PSMN1R3-30YL,115
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 30 V 1.5 mOhm logic level MOSFET in LFPAK -- PSMN1R5-30YL,115
N-channel 30 V 1.7 mOhm logic level MOSFET in LFPAK -- PSMN1R7-30YL,115
N-channel 30 V 2 mOhm logic level MOSFET in LFPAK -- PSMN2R0-30YLE,115
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
30 V, N-channel Trench MOSFET -- PMX300UNEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package...
20 V, N-channel Trench MOSFET -- PMX100UNZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package;
20 V, N-channel Trench MOSFET -- PMX100UNEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Low...
20 V, N-channel Trench MOSFET -- PMZ600UNELYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Leadless ultra...
20 V, N-channel Trench MOSFET -- PMZ600UNEYL
20 V, N-channel Trench MOSFET -- PMZ600UNEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra...
20 V, N-channel Trench MOSFET -- PMZ290UNE2YL
30 V, N-channel Trench MOSFET -- PMZ370UNEYL
30 V, N-channel Trench MOSFET -- PMZ390UNEYL
30 V, N-channel Trench MOSFET -- PMZ550UNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, N-channel Trench MOSFET -- PMZ130UNEYL
30 V, N-channel Trench MOSFET -- PMZ200UNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
20 V, single N-channel Trench MOSFET -- PMZB290UN,315
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology...
20 V, N-channel Trench MOSFET -- PMZB600UNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra...
20 V, N-channel Trench MOSFET -- PMZB290UNE2YL
30 V, N-channel Trench MOSFET -- PMZB550UNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, N-channel Trench MOSFET -- PMZB150UNEYL
30 V, N-channel Trench MOSFET -- PMZB200UNEYL
30 V, N-channel Trench MOSFET -- PMZB390UNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
20 V, N-channel Trench MOSFET -- PMZB600UNELYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology Features and benefits Low leakage current Leadless ultra...
80 V, N-channel Trench MOSFET -- PMXB360ENEAZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra small...
12 V, N-channel Trench MOSFET -- PMXB40UNEZ
20 V, N-channel Trench MOSFET -- PMXB43UNEZ
30 V, N-channel Trench MOSFET -- PMXB56ENZ
30 V, N-channel Trench MOSFET -- PMXB65ENEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra...
100 V N-channel Trench MOSFET -- PMT280ENEAX
100 V N-channel Trench MOSFET -- PMT560ENEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching...
30 V, N-channel Trench MOSFET -- PMZ390UN,315
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection:...
30 V, N-channel Trench MOSFET -- PMV42ENER
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Low on-state resistance Trench...
30 V, N-channel Trench MOSFET -- PMV100ENEAR
30 V, N-channel Trench MOSFET -- PMV20ENR
30 V, N-channel Trench MOSFET -- PMV37EN2R
30 V, N-channel Trench MOSFET -- PMV45EN2R
30 V, N-channel Trench MOSFET -- PMV45EN2VL
30 V, N-channel Trench MOSFET -- PMV90ENER
30V, N-channel Trench MOSFET -- PMV50ENEAR
60 V, N-channel Trench MOSFET -- PMV450ENEAR
60V, N-channel Trench MOSFET -- PMV230ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench...
100 V, N-channel Trench MOSFET -- PMV280ENEAR
30 V, N-channel Trench MOSFET -- PMV15ENEAR
30 V, N-channel Trench MOSFET -- PMV28ENEAR
30 V, N-channel Trench MOSFET -- PMV52ENEAR
40 V, N-channel Trench MOSFET -- PMV130ENEAR
40 V, N-channel Trench MOSFET -- PMV30ENEAR
40 V, N-channel Trench MOSFET -- PMV60ENEAR
60 V, N-channel Trench MOSFET -- PMV120ENEAR
60 V, N-channel Trench MOSFET -- PMV164ENEAR
60 V, N-channel Trench MOSFET -- PMV37ENEAR
60 V, N-channel Trench MOSFET -- PMV55ENEAR
60 V, N-channel Trench MOSFET -- PMV88ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj...
40 V, N-channel Trench MOSFET -- PMV65ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
20 V, N-channel Trench MOSFET -- PMV15UNEAR
30 V, N-channel Trench MOSFET -- PMV19XNEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T...
20 V, N-channel Trench MOSFET -- PMV20XNEAR
20 V, N-channel Trench MOSFET -- PMV28UNEAR
30 V, N-channel Trench MOSFET -- PMV25ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench...
20 V, N-channel Trench MOSFET -- PMV65UNEAR
20 V, N-channel Trench MOSFET -- PMV65UNER
30 V, N-channel Trench MOSFET -- PMV20XNER
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced...
20 V, N-channel Trench MOSFET -- PMV16XNR
20 V, N-channel Trench MOSFET -- PMV30UN2R
20 V, N-channel Trench MOSFET -- PMV30UN2VL
30 V, N-channel Trench MOSFET -- PMV40UN2R
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very...
30 V, N-channel Trench MOSFET -- PMV15ENER
30 V, N-channel Trench MOSFET -- PMV28ENER
30 V, N-channel Trench MOSFET -- PMV52ENER
60 V, N-channel Trench MOSFET -- PMV164ENER
60 V, N-channel Trench MOSFET -- PMV37ENER
60 V, N-channel Trench MOSFET -- PMV88ENER
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =...
20 V, N-channel Trench MOSFET -- PMV13XNEAR
30 V, N-channel Trench MOSFET -- PMV50XNEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj...
N-channel TrenchMOS standard level FET -- PMV213SN,215
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Features and benefits Low on-state resistance in a small surface mount package Applications DC-to-DC primary side switching
N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E -- PSMN4R2-80YSEX
N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R2-80YSE delivers very low RDSon and a very strong...
N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E -- PSMN4R8-100YSEX
N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong...
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications -- PSMN040-100MSEX
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing...
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications -- PSMN075-100MSEX
New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (PoE) systems capable of delivering up to 100 W to each powered device (PD). Large screen LCD displays,...
NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package -- PSMN3R9-100YSFX
NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower...
NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package -- PSMN3R5-80YSFX
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower...
80 V, 500 mA NPN general-purpose transistor -- PMSTA06,115
NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56 Features and benefits High current (max. 500 mA) Very small SMD plastic...
NPN high-voltage transistor -- PMST5550,115
NPN high-voltage transistor -- PMST5550,135
NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications Switching and...
NPN high-voltage transistor -- PMST5550-QF
NPN high-voltage transistor -- PMST5550-QX
NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Qualified according to...
NPN high-voltage transistor -- PMST5551,115
NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST5401 Features and benefits Low current (max. 300 mA) High voltage (max. 160 V)...
NPN high-voltage transistor -- PMSTA42,115
NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA92 Features and benefits High current (max. 500 mA) High voltage (max. 200 V)...
NPN switching transistor -- PMST2369,115
NPN switching transistor -- PMST2369,135
NPN switching transistor in a SOT323 plastic package. Features and benefits Low current (max. 200 mA) Low voltage (max. 15 V). AEC-Q101 qualified Applications High-speed switching applications, primarily in portable...
NPN switching transistor -- PMST3904,115
NPN switching transistor -- PMST3904,135
NPN switching transistor -- PMST3904/ZLX
NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage...
NPN switching transistor -- PMST4401,115
NPN switching transistor -- PMST4401,135
NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST4403 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V)...
NPN general purpose transistors -- PMST5089,115
NPN transistor in a SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications Low-noise input stages in audio equipment.
NPN general purpose transistors -- PMST6428,115
NPN transistor in an SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 50 V). AEC-Q101 qualified Applications General purpose switching and amplification in...
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) -- PRMH9Z
NPN/NPN Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) -- PRMH10Z
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD10. Features and benefits 100 mA output current capability Built-in bias...
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) -- PRMH2Z
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD12. Features and benefits 100 mA output current capability Built-in bias...
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) -- PRMH13Z
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD13. Features and benefits 100 mA output current capability Built-in bias...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PRMH11Z
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PRMB11 NPN/PNP complement: PRMD3 Features and benefits 100 mA output current...
NPN/NPN resistor-equipped double transistor; R1 = 4.7 kOhm, R2 = 47 kOhm -- PQMH13Z
NPN/NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD13 Features and benefits 100 mA output current capability Built-in bias resistors...
NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm -- PQMH9Z
NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm -- PQMH10Z
NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD10 Features and benefits 100 mA output current capability Built-in bias resistors...
NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm -- PQMH2Z
NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD12. Features and benefits 100 mA output current capability Built-in bias resistors...
NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm -- PQMH11Z
NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PQMB11. NPN/PNP complement: PQMD3. Features and benefits 100 mA output current capability...
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ -- PQMD2Z
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ -- PQMD12Z
NPN/PNP double Resistor-Equipped Transist ors (RET) in small Surface-Mounted Device (SMD) plastic packages. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height...
NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm -- PQMD16Z
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
NPN/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm -- PQMD10Z
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH10 Features and benefits 100 mA output current capability Built-in bias...
NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm -- PQMD3Z
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 PNP/PNP complement: PQMB11 Features and benefits 100 mA output current...
NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm -- PQMD13Z
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH13 Features and benefits 100 mA output current capability Built-in bias...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PRMD3Z
NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11 PNP/PNP complement: PRMB11 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) -- PRMD2Z
NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) -- PRMD16Z
NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) -- PRMD10Z
NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH10. Features and benefits 100 mA output current capability Built-in bias...
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) -- PRMD12Z
NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH12. Features and benefits 100 mA output current capability Built-in bias...
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) -- PRMD13Z
NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH13. Features and benefits 100 mA output current capability Built-in bias...
20 V, P-channel Trench MOSFET -- PMX400UPZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package;
20 V, P-channel Trench MOSFET -- PMZ950UPELYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench MOSFET...
20 V, P-channel Trench MOSFET -- PMZ350UPEYL
30 V, P-channel Trench MOSFET -- PMZ1200UPEYL
30 V, P-channel Trench MOSFET -- PMZ320UPEYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, P-channel Trench MOSFET -- PMZB950UPELYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench MOSFET...
20 V, single P-channel Trench MOSFET -- PMZB350UPE,315
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
20 V, P-channel Trench MOSFET -- PMZB950UPEYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra...
30 V, P-channel Trench MOSFET -- PMZB320UPEYL
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, single P-channel Trench MOSFET -- PMZB670UPE,315
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
12 V, P-channel Trench MOSFET -- PMXB65UPEZ
20 V, P-channel Trench MOSFET -- PMXB350UPEZ
20 V, P-channel Trench MOSFET -- PMXB75UPEZ
30 V, P-channel Trench MOSFET -- PMXB120EPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra...
70 V, P-channel Trench MOSFET -- PMT200EPEX
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching...
20 V, 4 A P-channel Trench MOSFET -- PMV32UP,215
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V drain-source on-state resistance rated Very...
20 V, single P-channel Trench MOSFET -- PMV50UPE,215
20 V, single P-channel Trench MOSFET -- PMV50UPEVL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 3 kV ESD protected Trench MOSFET technology...
100 V, P-channel Trench MOSFET -- PMV240SPR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175...
30 V, P-channel Trench MOSFET -- PMV35EPER
30 V, P-channel Trench MOSFET -- PMV50EPEAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench...
60 V, P-channel Trench MOSFET -- PMV100EPAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj...
20 V, 3.5 A P-channel Trench MOSFET -- PMV48XP/MIR
20 V, 3.5 A P-channel Trench MOSFET -- PMV48XPVL
20 V, P-channel Trench MOSFET -- PMV48XPAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Very fast...
30 V, P-channel Trench MOSFET -- PMV74EPER
40 V, P-channel Trench MOSFET -- PMV250EPEAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
20 V, P-channel Trench MOSFET -- PMV28XPEAR
20 V, P-channel Trench MOSFET -- PMV30XPAR
20 V, P-channel Trench MOSFET -- PMV48XPA2R
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T...
20 V, P-channel Trench MOSFET -- PMV50XPR
20 V, single P-channel Trench MOSFET -- PMV65XP,215
20 V, single P-channel Trench MOSFET -- PMV65XP/MIR
20 V, single P-channel Trench MOSFET -- PMV65XPVL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench...
20 V, P-channel Trench MOSFET -- PMV100XPEAR
20 V, single P-channel Trench MOSFET -- PMV33UPE,215
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench...
20 V, P-channel Trench MOSFET -- PMV27UPEAR
20 V, P-channel Trench MOSFET -- PMV27UPER
20 V, P-channel Trench MOSFET -- PMV75UP,215
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very...
20 V, P-channel Trench MOSFET -- PMV30XPEAR
20 V, P-channel Trench MOSFET -- PMV65XPEAR
20 V, P-channel Trench MOSFET -- PMV65XPER
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast switching Enhanced...
20 V, 1.2 A P-channel Trench MOSFET -- PMV160UPVL
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated Very fast...
60 V, P-channel Trench MOSFET -- PSMP033-60YEX
60 V, P-channel Trench MOSFET -- PSMP061-60YEX
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits High thermal power dissipation capability Suitable for thermally demanding...
PNP high-voltage transistor -- PMSTA92,115
PNP high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA42 Features and benefits Very small package High voltage Applications Primarily intended for use...
40 V, 200 mA PNP switching transistor -- PMST3906,115
40 V, 200 mA PNP switching transistor -- PMST3906,135
PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904 Features and benefits Collector current: IC ≤ -200 mA Collector-emitter voltage: V...
60 V, 600 mA PNP switching transistor -- PMST2907A,115
PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST2222A Features and benefits General purpose switching transistor Applications Switching and linear amplification
40 V, 600 mA PNP switching transistor -- PMST4403,115
PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401 Features and benefits General purpose switching transistor Applications Switching and linear amplification
60 V, 500 mA PNP general-purpose transistor -- PMSTA55,115
PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V AEC-Q101 qualified...
80V, 500 mA PNP general-purpose transistor -- PMSTA56,115
PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V AEC-Q101 qualified...
50 V, 100 mA PNP/PNP resistor-equipped transistor; R1 = 4.7 kOhm, R2 = 10 kOhm -- PUMB18,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PUMB10,115
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PUMB10F
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 NPN/NPN complement: PUMH10 Features and benefits 100 mA output current capability...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PUMB20,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 NPN/NPN complement: PUMH10 Features and benefits Built-in bias resistors Simplifies circuit...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PUMB2,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD12 NPN/NPN complement: PUMH2 Features and benefits 100 mA output current capability...
PNP/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PUMB13,115
PNP/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PUMB13/ZLX
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD13 NPN/NPN complement: PUMH13 Features and benefits 100 mA output current capability...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PUMB15,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD15 NPN/NPN complement: PUMH15 Features and benefits 100 mA output current capability...
50 V, 100 mA PNP/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PUMB1,115
50 V, 100 mA PNP/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PUMB1,135
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD2 NPN/NPN complement: PUMH1 Features and benefits 100 mA output current capability...
50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kOhm, R2 = 10 kOhm -- PUMB11,115
50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kOhm, R2 = 10 kOhm -- PUMB11,135
PNP/PNP double Resistor-Equipped Transistor (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 NPN/NPN complement: PUMH11 Features and benefits 100 mA output current capability Built-in...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PRMB11Z
PNP/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11 NPN/PNP complement: PRMD3 Features and benefits 100 mA output current...
50 V, 20 mA PNP/PNP resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm -- PUMB24,115
PNP/PNP Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD)plastic package. NPN/NPN complement: PUMH24 NPN/PNP complement: PUMD24 Features and benefits Built-in bias resistors Simplifies circuit design Reduces...
PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm -- PQMB11Z
PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 NPN/PNP complement: PQMD3 Features and benefits 100 mA output current capability...
PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm -- PUMB16,115
PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open -- PUMB19,115
PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm -- PUMB17,115
PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm -- PUMB17/ZLX
PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open -- PUMB14,115
PNP/PNP resistor-equipped transistors Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost AEC-Q101 qualified Applications Low current peripheral driver Control of IC...
N-channel TrenchMOS SiliconMAX standard level FET -- PSMN057-200B,118
N-channel TrenchMOS SiliconMAX standard level FET -- PSMN059-150Y,115
N-channel TrenchMOS SiliconMAX standard level FET -- PSMN102-200Y,115
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial...
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 -- PSMN1R0-40ULDX
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation...
N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 -- PSMN0R9-30ULDX
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation...
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 -- PSMN011-60MSX
Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 60 V 12 mOhm standard level MOSFET in LFPAK33 -- PSMN012-60MSX
Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. Features and...
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK -- PSMN3R7-100BSEJ
Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and...
N-channel TrenchMOS standard level FET -- PMZ1000UN,315
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
N-channel 100 V, 4.8 mΩ standard level MOSFET in D2PAK -- PSMN4R8-100BSEJ
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand...
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK -- PSMN7R6-100BSEJ
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand...
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK -- PSMN3R8-100BS,118
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK -- PSMN1R7-60BS,118
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK -- PSMN3R0-60BS,118
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK -- PSMN7R6-60BS,118
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK -- PSMN4R6-60BS,118
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
N-channel 100 V 9.6 mOhm standard level MOSFET in D2PAK -- PSMN9R5-100BS,118
Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100V 16 mOhm standard level MOSFET in D2PAK -- PSMN016-100BS,118
Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 -- PSMN013-100YSEX
Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand...
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK -- PSMN5R6-100BS,118
Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
N-channel 40 V 7.6 mOhm standard level MOSFET in D2PAK -- PSMN8R0-40BS,118
N-channel 60 V 14.8 mOhm standard level MOSFET in D2PAK -- PSMN015-60BS,118
N-channel 80 V 11 mOhm standard level MOSFET in D2PAK -- PSMN012-80BS,118
N-channel 80 V 17 mOhm standard level MOSFET in D2PAK -- PSMN017-80BS,118
N-channel 80 V 8.7 mOhm standard level MOSFET in D2PAK -- PSMN8R7-80BS,118
N-channel 80V 6.9mOhm standard level MOSFET in D2PAK -- PSMN6R5-80BS,118
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100 V 34.5 mOhm standard level MOSFET in D2PAK. -- PSMN034-100BS,118
N-channel 100V 6.8 mOhm standard level MOSFET in D2PAK. -- PSMN7R0-100BS,118
N-channel 80 V, 3 mOhm standard level FET in D2PAK -- PSMN2R8-80BS,118
N-channel 80 V, 3.5 mOhm standard level MOSFET in D2PAK -- PSMN3R3-80BS,118
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and...
N-channel 100 V 16.3 mOhm standard level MOSFET in LFPAK -- PSMN016-100YS,115
N-channel 100V 12mOhm standard level MOSFET in LFPAK -- PSMN012-100YS,115
N-channel 100V 20.5mOhm standard level MOSFET in LFPAK -- PSMN020-100YS,115
N-channel LFPAK 100 V 39.5 mOhm standard level MOSFET -- PSMN039-100YS,115
N-channel LFPAK 100 V 72.4 mOhm standard level MOSFET -- PSMN069-100YS,115
N-channel LFPAK 100V 27.5 mOhm standard level MOSFET -- PSMN028-100YS,115
N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET -- PSMN2R6-40YS,115
N-channel LFPAK 40 V 3.3 mOhm standard level MOSFET -- PSMN3R3-40YS,115
N-channel LFPAK 40 V 4.2 mOhm standard level MOSFET -- PSMN4R0-40YS,115
N-channel LFPAK 40 V 8.6 mOhm standard level MOSFET -- PSMN8R3-40YS,115
N-channel LFPAK 40 V, 14 mOhm standard level MOSFET -- PSMN014-40YS,115
N-channel LFPAK 40 V, 5.7 mOhm standard level MOSFET -- PSMN5R8-40YS,115
N-channel LFPAK 60 V 15.7 mOhm standard level MOSFET -- PSMN017-60YS,115
N-channel LFPAK 60 V 24.7 mOhm standard level MOSFET -- PSMN030-60YS,115
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET -- PSMN012-60YS,115
N-channel LFPAK 60 V, 5.2 mΩ standard level FET -- PSMN5R5-60YS,115
N-channel LFPAK 60 V, 6.4 mOhm standard level MOSFET -- PSMN7R0-60YS,115
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET -- PSMN8R5-60YS,115
N-channel LFPAK 80 V 11 mOhm standard level MOSFET -- PSMN011-80YS,115
N-channel LFPAK 80 V 12.9 mOhm standard level MOSFET -- PSMN013-80YS,115
N-channel LFPAK 80 V 18 mOhm standard level MOSFET -- PSMN018-80YS,115
N-channel LFPAK 80 V 27.5 mOhm standard level MOSFET -- PSMN026-80YS,115
N-channel LFPAK 80 V 45 mOhm standard level MOSFET -- PSMN045-80YS,115
N-channel LFPAK 80 V 8.5 mOhm standard level MOSFET -- PSMN8R2-80YS,115
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel LFPAK 60 V, 4.0 mΩ standard level FET -- PSMN4R0-60YS,115
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. Features...
N-channel 40 V 4.5 mOhm standard level MOSFET in D2PAK -- PSMN4R5-40BS,118
N-channel 80 V, 4.5 mOhm standard level MOSFET in D2PAK -- PSMN4R4-80BS,118
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK -- PSMN8R9-100BSEJ
SuperSOA N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. PSMN8R9-100BSE delivers low RDSon and very strong linear-mode (SOA) performance, and complements the latest "hot-swap" controllers...

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