Nexperia B.V. N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology PSMNR70-40SSHJ

Description
425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current. Features and benefits 425 Amp continuous current capability LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating Ideal replacement for D2PAK and 10 x 12 mm leadless package types Qualified to 175 °C Meets UL2595 requirements for creepage and clearance Avalanche rated, 100 % tested Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage Narrow VGS(th) rating for easy paralleling and improved current sharing Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions Applications Brushless DC motor control Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies Battery protection eFuse and load switch Hotswap / in-rush current management
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Description
425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current. Features and benefits 425 Amp continuous current capability LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating Ideal replacement for D2PAK and 10 x 12 mm leadless package types Qualified to 175 °C Meets UL2595 requirements for creepage and clearance Avalanche rated, 100 % tested Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage Narrow VGS(th) rating for easy paralleling and improved current sharing Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions Applications Brushless DC motor control Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies Battery protection eFuse and load switch Hotswap / in-rush current management
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Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology - PSMNR70-40SSHJ - Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
PSMNR70-40SSHJ
N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology PSMNR70-40SSHJ
425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current. Features and benefits 425 Amp continuous current capability LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating Ideal replacement for D2PAK and 10 x 12 mm leadless package types Qualified to 175 °C Meets UL2595 requirements for creepage and clearance Avalanche rated, 100 % tested Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage Narrow VGS(th) rating for easy paralleling and improved current sharing Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions Applications Brushless DC motor control Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies Battery protection eFuse and load switch Hotswap / in-rush current management

425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.

Features and benefits

  • 425 Amp continuous current capability
  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
  • Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types
  • Qualified to 175 °C
  • Meets UL2595 requirements for creepage and clearance
  • Avalanche rated, 100 % tested
  • Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
  • Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
  • Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
  • Narrow VGS(th) rating for easy paralleling and improved current sharing
  • Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Applications

  • Brushless DC motor control
  • Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies
  • Battery protection
  • eFuse and load switch
  • Hotswap / in-rush current management
Supplier's Site Datasheet
Singapore
40V 425A MOSFET Transistor
278-PSMNR70-40SSHJ
40V 425A MOSFET Transistor 278-PSMNR70-40SSHJ
MOSFET N-CH 40V 425A LFPAK88 Product overview: PSMNR70-40SSHJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 425A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 425A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMNR70-40SSHJ can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 425A LFPAK88 Product overview: PSMNR70-40SSHJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 425A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 425A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMNR70-40SSHJ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1383217-PSMNR70-40SSHJ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1383217-PSMNR70-40SSHJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1383217-PSMNR70-40SSHJ
Win Source Part Number: 1383217-PSMNR70-40SS HJ Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tape & Reel Standard Package: 2,000 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 425A (Ta) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 375W (Ta) Mounting Type: Surface Mount Package / Case: SOT-1235 Supplier Device Package: LFPAK88 (SOT1235) Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Base Product Number: PSMNR70 Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)

Win Source Part Number: 1383217-PSMNR70-40SSHJ
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 2,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Schottky Diode (Body)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 425A (Ta)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 375W (Ta)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Supplier Device Package: LFPAK88 (SOT1235)
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: PSMNR70
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
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Single FETs, MOSFETs - PSMNR70-40SSHJ - ODG (Origin Data Global)
Shenzhen, China
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Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey RS Components, Ltd. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMNR70-40SSHJ 278-PSMNR70-40SSHJ 1383217-PSMNR70-40SSHJ 1727-8560-2-ND 219468 PSMNR70-40SSHJ PSMNR70-40SSHJ PSMNR70-40SSHJ
Product Name N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 40V 425A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement
Package Type SOT1235 Tape & Reel (TR) SOT3 SOT-1235 LFPAK SOT123; SOT-1235 SOT123; SOT-1235
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 375 milliwatts 375000 milliwatts 375000 milliwatts
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