Nexperia B.V. N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET PSMN2R6-40YS,115

Description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package Applications DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies
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Description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package Applications DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET - PSMN2R6-40YS,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET
PSMN2R6-40YS,115
N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET PSMN2R6-40YS,115
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package Applications DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features and benefits

  • Advanced TrenchMOS provides low RDSon and low gate charge
  • High efficiency gains in switching power converters
  • Improved mechanical and thermal characteristics
  • LFPAK provides maximum power density in a Power SO8 package

Applications

  • DC-to-DC convertors
  • Lithium-ion battery protection
  • Load switching
  • Motor control
  • Server power supplies
Supplier's Site Datasheet
 - PSMN2R6-40YS,115 - Rochester Electronics
Newburyport, MA, United States
100A, 40V, 0.0028ohm, N-Channel MOSFET, MO-235

100A, 40V, 0.0028ohm, N-Channel MOSFET, MO-235

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R6-40YS,115 - 1090392-PSMN2R6-40YS,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R6-40YS,115
1090392-PSMN2R6-40YS,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R6-40YS,115 1090392-PSMN2R6-40YS,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090392-PSMN2R6-40YS ,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 131W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 3776pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090392-PSMN2R6-40YS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 131W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 3776pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4274-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4274-1-ND
Single FETs, MOSFETs 1727-4274-1-ND
N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4274-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4274-2-ND
Single FETs, MOSFETs 1727-4274-2-ND
N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4274-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4274-6-ND
Single FETs, MOSFETs 1727-4274-6-ND
N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Singapore, Singapore
40V 100A MOSFET Transistor
278-PSMN2R6-40YS,115
40V 100A MOSFET Transistor 278-PSMN2R6-40YS,115
MOSFET N-CH 40V 100A LFPAK56 Product overview: PSMN2R6-40YS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN2R6-40YS,115 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 100A LFPAK56 Product overview: PSMN2R6-40YS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN2R6-40YS,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 100 A, 40 V, 2 Mohm, 10 V, 3 V Rohs Compliant Nexperia - 62R9338 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 100 A, 40 V, 2 Mohm, 10 V, 3 V Rohs Compliant Nexperia
62R9338
Mosfet Transistor, N Channel, 100 A, 40 V, 2 Mohm, 10 V, 3 V Rohs Compliant Nexperia 62R9338
MOSFET Transistor, N Channel, 100 A, 40 V, 2 mohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 100 A, 40 V, 2 mohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN2R6-40YS,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN2R6-40YS,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN2R6-40YS,115
MOSFET N-CH 40V 100A LFPAK56

MOSFET N-CH 40V 100A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. Rochester Electronics Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN2R6-40YS,115 PSMN2R6-40YS,115 1090392-PSMN2R6-40YS,115 1727-4274-1-ND 278-PSMN2R6-40YS,115 62R9338 PSMN2R6-40YS,115
Product Name N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R6-40YS,115 Single FETs, MOSFETs 40V 100A MOSFET Transistor Mosfet Transistor, N Channel, 100 A, 40 V, 2 Mohm, 10 V, 3 V Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement
Package Type SOT669 SOT669 SOT669 SOT3; LFPAK56, Power-SO8 SC-100, SOT-669 Tape & Reel (TR) TO-3 SC-100, SOT-669
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
rDS(on) 0.0028 ohms
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