N-channel MOSFET designed for industrial, communications, and domestic applications, featuring a 40 V drain-source voltage rating and a maximum continuous drain current of 100 A at 25°C, with a typical on-state resistance of 2.8 mΩ at 25°C and 10 V gate-source voltage. Packaged in an LFPAK (SOT669) surface-mounted case, it supports a junction temperature up to 175 °C and has an avalanche energy rating of 179 mJ. The device complies with IEC 60134 for absolute maximum ratings and is qualified for high thermal performance in power converters, motor control, and server power supplies.
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Features and benefits
Applications
100A, 40V, 0.0028ohm, N-Channel MOSFET, MO-235
MOSFET N-CH 40V 100A LFPAK56 Product overview: PSMN2R6-40YS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN2R6-40YS,115
N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 40V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090392-PSMN2R6-40YS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 131W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 3776pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET Transistor, N Channel, 100 A, 40 V, 2 mohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 40V 100A LFPAK56
| Nexperia B.V. | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMN2R6-40YS,115 | PSMN2R6-40YS,115 | 278-PSMN2R6-40YS,115 | 1727-4274-1-ND | 1090392-PSMN2R6-40YS,115 | 62R9338 | PSMN2R6-40YS,115 |
| Product Name | N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET | 40V 100A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R6-40YS,115 | Mosfet Transistor, N Channel, 100 A, 40 V, 2 Mohm, 10 V, 3 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| Package Type | SOT669 SOT669 | SOT669 | Tape & Reel (TR) | SC-100, SOT-669 | SOT3; LFPAK56, Power-SO8 | TO-3 | SC-100, SOT-669 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| rDS(on) | 0.0028 ohms |
