Nexperia B.V. N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology PSMNR58-30YLHX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications. Features and benefits 100% avalanche tested at I(AS) = 190 A Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Wave solderable; exposed leads for optimal solder coverage and visual solder inspection Applications Hot swap e-Fuse Power OR-ing DC switch / Load switch Battery protection Brushed and BLDC (brushless) motor control Synchronous rectification in AC-DC and DC-DC applications
  • N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology - PSMNR58-30YLHX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-8595-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-8595-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-8595-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PSMNR58-30YLHX - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMNR58-30YLHX - 930923-PSMNR58-30YLHX - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMNR58-30YLHX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications. Features and benefits 100% avalanche tested at I(AS) = 190 A Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Wave solderable; exposed leads for optimal solder coverage and visual solder inspection Applications Hot swap e-Fuse Power OR-ing DC switch / Load switch Battery protection Brushed and BLDC (brushless) motor control Synchronous rectification in AC-DC and DC-DC applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology - PSMNR58-30YLHX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology
PSMNR58-30YLHX
N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology PSMNR58-30YLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications. Features and benefits 100% avalanche tested at I(AS) = 190 A Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Wave solderable; exposed leads for optimal solder coverage and visual solder inspection Applications Hot swap e-Fuse Power OR-ing DC switch / Load switch Battery protection Brushed and BLDC (brushless) motor control Synchronous rectification in AC-DC and DC-DC applications

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications.

Features and benefits

  • 100% avalanche tested at I(AS) = 190 A
  • Optimized for low RDSon
  • Low leakage < 1 µA at 25 °C
  • Low spiking and ringing for low EMI designs
  • Optimized for 4.5 V gate drive
  • Copper-clip for low parasitic inductance and resistance
  • High reliability LFPAK package, qualified to 175 °C
  • Wave solderable; exposed leads for optimal solder coverage and visual solder inspection

Applications

  • Hot swap
  • e-Fuse
  • Power OR-ing
  • DC switch / Load switch
  • Battery protection
  • Brushed and BLDC (brushless) motor control
  • Synchronous rectification in AC-DC and DC-DC applications
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-8595-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8595-1-ND
Single FETs, MOSFETs 1727-8595-1-ND
N-Channel 30V 380A (Tj) Surface Mount LFPAK56; Power-SO8

N-Channel 30V 380A (Tj) Surface Mount LFPAK56; Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8595-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8595-6-ND
Single FETs, MOSFETs 1727-8595-6-ND
N-Channel 30V 380A (Tj) Surface Mount LFPAK56; Power-SO8

N-Channel 30V 380A (Tj) Surface Mount LFPAK56; Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8595-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8595-2-ND
Single FETs, MOSFETs 1727-8595-2-ND
N-Channel 30V 380A (Tj) Surface Mount LFPAK56; Power-SO8

N-Channel 30V 380A (Tj) Surface Mount LFPAK56; Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - PSMNR58-30YLHX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMNR58-30YLHX
Single FETs, MOSFETs PSMNR58-30YLHX
MOSFET N-CH 30V 300A LFPAK56

MOSFET N-CH 30V 300A LFPAK56

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMNR58-30YLHX - 930923-PSMNR58-30YLHX - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMNR58-30YLHX
930923-PSMNR58-30YLHX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMNR58-30YLHX 930923-PSMNR58-30YLHX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 930923-PSMNR58-30YLH X Operating Temperature Range: 175°C (TJ) Features: N-Channel 30 V 380A (Tj) - Surface Mount LFPAK56; Power-SO8 Package: SOT-1023, 4-LFPAK Package: Reel - TR Mounting: Surface Mount Family Name: PSMNR58 Categories: Discrete Semiconductor Products Case / Package: LFPAK56; Power-SO8 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Quantity per package: 1500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 26 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: PSMNR58-30YLHX-ND, 934660323115, 1727-8595-1, 1727-8595-2, 1727-8595-6

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930923-PSMNR58-30YLHX
Operating Temperature Range: 175°C (TJ)
Features: N-Channel 30 V 380A (Tj) - Surface Mount LFPAK56; Power-SO8
Package: SOT-1023, 4-LFPAK
Package: Reel - TR
Mounting: Surface Mount
Family Name: PSMNR58
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56; Power-SO8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: PSMNR58-30YLHX-ND, 934660323115, 1727-8595-1, 1727-8595-2, 1727-8595-6

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PSMNR58-30YLHX
MOSFET PSMNR58-30YLHX
MOSFET PSMNR58-30YLH/SOT102 3/4 LEADS

MOSFET PSMNR58-30YLH/SOT1023/4 LEADS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMNR58-30YLHX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMNR58-30YLHX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMNR58-30YLHX
MOSFET N-CH 30V 300A LFPAK56

MOSFET N-CH 30V 300A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMNR58-30YLHX 1727-8595-1-ND PSMNR58-30YLHX 930923-PSMNR58-30YLHX PSMNR58-30YLHX PSMNR58-30YLHX
Product Name N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMNR58-30YLHX MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
Package Type SOT1023 SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK SOT3; LFPAK56; Power-SO8 SOT-1023, 4-LFPAK
Polarity N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
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