Nexperia B.V. Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name	Notes
PBSS5112PAP,115 PBSS5160V,115 PBSS5220V,115 PBSS5240Y,115 PBSS5240Y,135 PBSS5350SS,115 PBSS5350Z/ZLF PBSS8110Y,115 PBSS9110D,115 PBSS9110Y,115 PBSS9410PA,115 PDTA114EQBZ PDTA114EU/1F PDTA114YQBZ PDTA114YQCZ PDTA123JQBZ PDTA124EQBZ PDTA143EQAZ PDTA143EQBZ PDTA143EU/1X PDTA143XQBZ PDTA143ZQBZ PDTA143ZQCZ PDTA144EQBZ PDTA144EQCZ PDTC114EQCZ PDTC114ET/DG/B2,21 PDTC114ET/DG/B4,21 PDTC114EU/1F PDTC114YQBZ PDTC114YQCZ PDTC123JQBZ PDTC123JQCZ PDTC123JT/1R PDTC123TU115 PDTC124EQBZ PDTC124EQCZ PDTC124ET/1R PDTC124XQBZ PDTC124XQCZ PDTC143EQBZ PDTC143EQCZ PDTC143XQBZ PDTC143XQCZ PDTC143ZQBZ PDTC143ZQCZ PDTC143ZU/1X PDTC144ET/DG/B2,21 PDTC144ET/DG/B4,21 PDTC144ET/DG/B4,215 PDTC144EU/1X PDTC144EU/6X PDTC144EU/HE115 PDTD113ZT/1R PDTD113ZU135
50 V, 100 mA NPN resistor-equipped transistors -- PDTC114EQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC114YQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQAZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQAZ	100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits 100 mA...
50 V, 100 mA NPN resistor-equipped transistors -- PDTC114EQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC114EQBZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC114YQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC124XQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQB-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQBZ	100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits 100 mA output current capability...
50 V, 100 mA NPN resistor-equipped transistors -- PDTC114EQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC114YQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC124XQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQC-QZ 50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQCZ	100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits 100 mA output current capability...
50 V, 100 mA PNP resistor-equipped transistors -- PDTA114EQAZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA114YQAZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA123JQAZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124EQAZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143XQAZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143ZQAZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA144EQAZ	100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits 100 mA...
50 V, 100 mA PNP resistor-equipped transistors -- PDTA114EQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA114YQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA123JQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124EQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124XQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124XQBZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143EQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143XQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143ZQB-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA144EQB-QZ	100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits 100 mA output current capability...
50 V, 100 mA PNP resistor-equipped transistors -- PDTA114EQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA114EQCZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA114YQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA123JQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA123JQCZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124EQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124EQCZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124XQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA124XQCZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143EQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143EQCZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143XQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143XQCZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA143ZQC-QZ 50 V, 100 mA PNP resistor-equipped transistors -- PDTA144EQC-QZ	100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits 100 mA output current capability...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm -- PDTD113ET,215	500 mA NPN Resistor-Equipped Transistors (RET) family. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs 500 mA output current capability 10...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTD123ET,215	500 mA NPN Resistor-Equipped Transistors (RET) family. Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ±10...
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open -- PDTD123TT,215	500 mA NPN Resistor-Equipped Transistors (RET) family. Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs AEC-Q101...
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm -- PDTB113ET,215	500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ET. Features and benefits 500 mA output current capability Reduces pick and...
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTB113ZT,215	500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ZT. Features and benefits 500 mA output current capability Reduces pick and...
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm -- PDTB123ET,215	500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123ET. Features and benefits 500 mA output current capability Reduces pick and...
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open -- PDTB123TT,215	500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123TT. Features and benefits 500 mA output current capability Reduces component count...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZT,215 50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZTVL NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZT-QR	NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design...
60 V, 6 A NPN low V_CEsat (BISS) transistor -- PBSS4560PA,115	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5560PA.
80 V, 5.6 A NPN low V_CEsat (BISS) transistor -- PBSS4580PA,115	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5580PA.
30 V, 6 A NPN low V_CEsat (BISS) transistor -- PBSS4630PA,115	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5630PA.
100 V, 5.2 A NPN low V_CEsat (BISS) transistor -- PBSS8510PA,115	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS9410PA.
100 V, 1 A NPN low VCEsat transistor -- PBSS8110D,115	NPN low VCEsat transistor in a plastic SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Features and benefits SOT457 package Low collector-emitter saturation voltage VCEsat High collector current...
100 V, 1 A NPN low VCEsat transistor -- PBSS8110T,215 100 V, 1 A NPN low VCEsat transistor -- PBSS8110TVL	NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110T Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
40 V low VCEsat NPN transistor -- PBSS4540Z,115	NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z Features and benefits Low collector-emitter saturation voltage High current capabilities Improved device reliability due to reduced heat...
40 V NPN low VCEsat transistor -- PBSS4440D,115	NPN low VCEsat transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current...
80 V, 4 A NPN low VCEsat transistor -- PBSS4480X,135 80 V, 4 A NPN low VCEsat transistor -- PBSS4480XZ	NPN low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead plastic package. PNP complement: PBSS5480X Features and benefits High hFE and low VCEsat at...
100 V, 1 A NPN low VCEsat transistor -- PBSS8110X,135	NPN low VCEsat transistor in a SOT89 (SC-62/ TO-243) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110X. Features and benefits SOT89 package Low collector-emitter saturation voltage VCEsat...
40 V, 5 A NPN low VCEsat transistor -- PBSS4540X,135	NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5540X Features and benefits High hFE and low V...
40 V, 2 A PNP low VCEsat transistor -- PBSS5240XF 40 V, 2 A PNP low VCEsat transistor -- PBSS5240XX	NPN low VCEsat transistor in a SOT89 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS5240X Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
20 V, 6 A NPN low VCEsat transistor -- PBSS4620PA,115	NPN low VCEsat transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5620PA Features and benefits Low collector-emitter...
100 V, 1 A NPN low VCEsat transistor -- PBSS8110Z,135	NPN low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
20 V, 5 A NPN low VCEsat transistor -- PBSS4520X,135 20 V, 5 A NPN low VCEsat transistor -- PBSS4520X,146	NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5520X Features and benefits High hFE and low VCEsat...
50 V, 500 mA NPN resistor-equipped transistors -- PDTD113EQAZ 50 V, 500 mA NPN resistor-equipped transistors -- PDTD113ZQAZ 50 V, 500 mA NPN resistor-equipped transistors -- PDTD114EQAZ 50 V, 500 mA NPN resistor-equipped transistors -- PDTD123EQAZ 50 V, 500 mA NPN resistor-equipped transistors -- PDTD123YQAZ 50 V, 500 mA NPN resistor-equipped transistors -- PDTD143EQAZ 50 V, 500 mA NPN resistor-equipped transistors -- PDTD143XQAZ	NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits 500 mA output current...
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114EMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTC114TMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTC123YMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EMB Features and benefits 20 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EMB. Features and benefits 100 mA output current capability Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TMB Features and benefits 100 mA output current capability Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTC114TM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114TM Features and benefits Built-in bias resistors Simplifies circuit design 100 mA...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TM Features and benefits 100 mA output current capability Built-in bias resistors...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EM,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EM Features and benefits 100 mA output current capability Built-in bias resistors...
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EMB,315	NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EMB Features and benefits 100 mA output current capability Reduces component count Built-in...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123ET,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123ETVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YT,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YT-QR 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YTVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT,235 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT-QR	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET-QR 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET-QVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124ET-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET,235	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET,235	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZT,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZT,235	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ET,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ET-QR 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ETVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT,215 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT/APGR	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YT Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143ETR 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143ETVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTD143XTR	NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143XT Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YT-QR	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114ET-QR 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114ET-QVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114ET,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114ET,235	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTC114TT,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTC114TT,235	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114TT Features and benefits Built-in bias resistors Simplifies circuit design 100 mA output current capability...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115ET,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TT,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TT,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TT,235	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YT,215 NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YTR	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TT,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XT,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XT,215 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XTVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TT,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VT,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WT,215	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTD114ETR 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTD114ETVL	NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB114ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EU,115	NPN Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YM,315	NPN Resistor-Equipped Transistor (RET) in a small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YM Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114EM,315	NPN Resistor-Equipped Transistor (RET) in a ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open -- PDTC143TT,215 50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open -- PDTC143TT,235	NPN Resistor-Equipped Transistor (RET) in a very small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114EU,115 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114EU,135 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114EU/MIF NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ -- PDTC114EU/ZLF	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTC114TU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114TU Features and benefits Built-in bias resistors Simplifies circuit design 100 mA output...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU-QX 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU/ZLX 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YUF	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EU,115 50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EUF	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JU-QX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU,135 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU/ZLF 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU/ZLX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EU/ZLX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU,135 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU/ZLF	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XUF	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZU/ZLX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU,115 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU,135 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU-QX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WU,115	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113EUF 50 V, 500 mA NPN resistor-equipped transistor -- PDTD113EUX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113ZUF 50 V, 500 mA NPN resistor-equipped transistor -- PDTD113ZUX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD114EUF 50 V, 500 mA NPN resistor-equipped transistor -- PDTD114EUX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB114EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123EUF 50 V, 500 mA NPN resistor-equipped transistor -- PDTD123EUX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123YUF 50 V, 500 mA NPN resistor-equipped transistor -- PDTD123YUX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143EUF 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143EUX	NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TM,315	NPN Resistor-Equipped Transistor (RET) in a very small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TM,315	NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface Mounted Device (SMD) plastic package. PNP complement: PDTA144TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VM,315	NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface Mounted Device (SMD) plastic package. PNP complement: PDTA144VM Features and benefits Built-in bias resistors Simplifies circuit design Reduces...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EM,315	NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EM,315	NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XM,315	NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WM,315	NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V; 2 A PNP low VCEsat (BISS) transistor -- PBSS5250T,215	PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability:...
60 V, 1.7 A PNP low VCEsat transistor -- PBSS5260QAZ PBSS5160QAZ	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement:...
40 V; 2 A PNP low VCEsat transistor -- PBSS5240ZF	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z Features and benefits Low collector-emitter saturation...
50 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5350THR	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High...
30 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5330PA,115 30 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5330PA,135	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA.
60 V, 5 A PNP low VCEsat (BISS) transistor -- PBSS5560PA,115	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA.
80 V, 4 A PNP low VCEsat (BISS) transistor -- PBSS5580PA,115	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4580PA.
20 V, 6 A PNP low VCEsat (BISS) transistor -- PBSS5620PA,115	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4620PA.
30 V, 6 A PNP low VCEsat (BISS) transistor -- PBSS5630PA,115	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4630PA.
20 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5320X,135	PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement: PBSS4320X Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High...
50 V, 3 A PNP low VCEsat transistor -- PBSS5350Z,135	PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
60 V, 3 A PNP low VCEsat transistor -- PBSS5360ZX	PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
50 V, 2 A PNP low VCEsat transistor -- PBSS5250THR	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC...
40 V, 2 A PNP low VCEsat transistor -- PBSS5240T,215 40 V, 2 A PNP low VCEsat transistor -- PBSS5240TVL	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T Features and benefits Low collector-emitter saturation voltage High current capability Improved device...
20 V, 3 A PNP low VCEsat transistor -- PBSS5320T,215	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4320T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low...
50 V, 3 A PNP low VCEsat transistor -- PBSS5350T,215 50 V, 3 A PNP low VCEsat transistor -- PBSS5350TVL	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low...
30 V; 1 A PNP low VCEsat transistor -- PBSS5130T,215	PNP low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Small SMD plastic package Low collector-emitter saturation voltage VCEsat High collector current...
50 V, 3 A PNP low VCEsat transistor -- PBSS5350D,115 50 V, 3 A PNP low VCEsat transistor -- PBSS5350D,125 50 V, 3 A PNP low VCEsat transistor -- PBSS5350D,135	PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D Features and benefits Low collector-emitter saturation voltage VCEsat High current capability...
20 V, 4 A PNP low VCEsat transistor -- PBSS5420D,115	PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D Features and benefits Very low collector-emitter saturation resistance Ultra low collector-emitter saturation...
100 V, 1 A PNP low VCEsat transistor -- PBSS9110Z,135	PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
40 V low VCEsat PNP transistor -- PBSS5540Z,115 40 V low VCEsat PNP transistor -- PBSS5540Z/ZLF 40 V low VCEsat PNP transistor -- PBSS5540Z/ZLX 40 V low VCEsat PNP transistor -- PBSS5540ZF	PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat...
40 V, 1 A PNP low VCEsat transistor -- PBSS5140T,215 40 V, 1 A PNP low VCEsat transistor -- PBSS5140T/ZLR	PNP low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
100 V, 1 A PNP low VCEsat transistor -- PBSS9110T,215	PNP low VCEsat transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat...
20 V, 2 A PNP low VCEsat transistor -- PBSS5220T,215	PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and...
30 V, 2 A PNP low VCEsat transistor -- PBSS5230T,215 30 V, 2 A PNP low VCEsat transistor -- PBSS5230T/ZLR	PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4230T Features and benefits Low collector-emiter saturation voltage VCEsat High collector current capability:...
20 V low VCEsat PNP transistor -- PBSS5320D,115 20 V low VCEsat PNP transistor -- PBSS5320D,125	PNP low VCEsat transistor in a SOT457 (SC-74) plastic package. Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation AEC-Q101...
50 V, 2 A PNP low VCEsat transistor -- PBSS5250X,115 50 V, 2 A PNP low VCEsat transistor -- PBSS5250X,135 50 V, 2 A PNP low VCEsat transistor -- PBSS5250XZ	PNP low VCEsat transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4250X Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
20 V, 5 A PNP low VCEsat transistor -- PBSS5520X,135	PNP low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead plastic package. NPN complement: PBSS4520X Features and benefits High hFE and low VCEsat at...
30 V, 3 A PNP low VCEsat transistor -- PBSS5330X,115 30 V, 3 A PNP low VCEsat transistor -- PBSS5330X,135 30 V, 3 A PNP low VCEsat transistor -- PBSS5330XZ	PNP low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage V...
40 V, 5 A PNP low VCEsat transistor -- PBSS5540X,135	PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device(SMD) plastic package. NPN complement: PBSS4540X Features and benefits Low collector-emitter saturation voltage VCEsat High...
50 V, 3 A PNP low VCEsat transistor -- PBSS5350X,115 50 V, 3 A PNP low VCEsat transistor -- PBSS5350X,135 50 V, 3 A PNP low VCEsat transistor -- PBSS5350X,146 50 V, 3 A PNP low VCEsat transistor -- PBSS5350X,147	PNP low VCEsat transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350X Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector...
40 V low VCEsat PNP transistor -- PBSS5140U,115 40 V low VCEsat PNP transistor -- PBSS5140U,135	PNP low VCesat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due...
60 V, 1 A PNP low VCEsat transistor -- PBSS5160U,115	PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
30 V, 3 A PNP low VCEsat transistor -- PBSS5330PASX	PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. NPN...
60 V, 3 A PNP low VCEsat transistor -- PBSS5360PASX	PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN...
60 V, 3 A PNP low VCEsat transistor -- PBSS5360XF 60 V, 3 A PNP low VCEsat transistor -- PBSS5360XX	PNP low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360X Features and benefits Low collector-emitter saturation voltage VCEsat...
80 V, 4 A PNP low VCEsat (BISS) transistor -- PBSS5480X,135 80 V, 4 A PNP low VCEsat (BISS) transistor -- PBSS5480XZ	PNP low VCEsat(BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. Features and benefits High hFE and low VCEsat at high current operation High...
20 V; 1 A PNP low VCEsat transistor -- PBSS5120T,215	PNP low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4120T-Q Features and benefits Small SMD plastic package Low collector-emitter saturation voltage VCEsat...
100 V, 1 A PNP low VCEsat (BISS) transistor -- PBSS9110X,135	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X. Features and benefits SOT89 package Low collector-emitter saturation voltage V...
40 V, 4 A PNP low VCEsat transistor -- PBSS5440D,115	PNP low VCEsat single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4440D Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector...
60 V, 1 A PNP low VCEsat transistor -- PBSS5160T-QR	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC...
60 V, 1 A PNP low VCEsat transistor -- PBSS5160T,215 60 V, 1 A PNP low VCEsat transistor -- PBSS5160TVL	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC...
50 V, 500 mA PNP resistor-equipped transistors -- PDTB113EQAZ 50 V, 500 mA PNP resistor-equipped transistors -- PDTB113ZQAZ 50 V, 500 mA PNP resistor-equipped transistors -- PDTB114EQAZ 50 V, 500 mA PNP resistor-equipped transistors -- PDTB123EQAZ 50 V, 500 mA PNP resistor-equipped transistors -- PDTB123YQAZ 50 V, 500 mA PNP resistor-equipped transistors -- PDTB143EQAZ 50 V, 500 mA PNP resistor-equipped transistors -- PDTB143XQAZ	PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits 500 mA output current...
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTA143ZMB,315	PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm -- PDTA113ZT,215	PNP Resistor-Equipped Transistor (RET) in a leadless small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTA123JT,215 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTA123JTVL	PNP Resistor-Equipped Transistor (RET) in a leadless SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTA113ZMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113ZMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTA114TMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTA114YMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114YMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTA115EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EMB. Features and benefits 20 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTA115TMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTA123EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTA123TMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTA123YMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123YMB Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTA124EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTA124TMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124TMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTA124XMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTA143EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144EMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTA144TMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144TMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTA144VMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144VMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTA144WMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144WMB. Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ -- PDTA113EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113EMB. Features and benefits 100 mA output current capability Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTA123JMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB Features and benefits 100 mA output current capability Simplifies circuit design...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTA143TMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TMB Features and benefits 100 mA output current capability Reduces component count...
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTA114YM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (DFN1006-3) Surface-Mounted Device(SMD) plastic package. NPN complement: PDTC114YM Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm -- PDTA113ZM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTA123JM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTA123YM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123YM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTA143EM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144EM,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144EM Features and benefits 100 mA output current capability Built-in bias resistors...
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTA143XMB,315	PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143XMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTA123JU,115	PNP Resistor-Equipped Transistor (RET) in a small leadless SOT323 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114ET,215 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114ET,235	PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTB123YT,215 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTB123YT/APGR	PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT Features and benefits 500 mA output current capability Reduces pick and place costs...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ -- PDTA113ET,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTA114TT,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TT Features and benefits 100 mA output current capability Built-in bias resistors Simplified circuit design...
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTA115ET,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTA115TT,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TT Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTA123ET,215 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTA123ETVL	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTA123TT,215 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTA123TT,235	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TT Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTA123YT,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123YT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTA124ET,215 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTA124ET,235	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTA124TT,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124TT Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTA124XT,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XT Features and benefits Built-in bias resistors Simplifies circuit design 100 mA output current capability...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTA143ET,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTA143XT,215 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTA143XTVL	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143XT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTA143ZT,215 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTA143ZT,235	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143ZT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144ET,215 PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144ET,235	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB114ETR 50 V, 500 mA PNP resistor-equipped transistor -- PDTB114ETVL	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD114ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB143ETR 50 V, 500 mA PNP resistor-equipped transistor -- PDTB143ETVL	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD143ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB143XTR 50 V, 500 mA PNP resistor-equipped transistor -- PDTB143XTVL	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD143XT Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTA114YT,215	PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device(SMD) plastic package. NPN complement: PDTC114YT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU,115 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU,135 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU-QX 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU/MIF 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU/SNX 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU/ZLF 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTA114EU/ZLX	PNP Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTA143ZU,115	PNP Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143ZU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTA115EM,315	PNP Resistor-Equipped Transistor (RET) in a ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTA123EM,315	PNP Resistor-Equipped Transistor (RET) in a ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTA143TT,215	PNP Resistor-Equipped Transistor (RET) in a very small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTA143XU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) in Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143XU Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm -- PDTA113ZU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ -- PDTA113EU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTA114TU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TU Features and benefits 100 mA output current capability Built-in bias resistors Simplified...
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTA115EU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTA115TU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TU Features and benefits Built-in bias resistors Simplified circuit design Reduction of component...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTA123EU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTA123TU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TU Features and benefits Built-in bias resistors Simplified circuit design Reduction of component...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTA123YU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123YU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTA124EU,115 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTA124EU,135	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTA124TU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124TU Features and benefits Built-in bias resistors Simplified circuit design Reduction of component...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTA124XU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XU Features and benefits Built-in bias resistors Simplifies circuit design 100 mA output...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTA143EU,115 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTA143EU/ZLX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTA143TU,115	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144EU,115 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144EU,135 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTA144EU/ZLF	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB113EUF 50 V, 500 mA PNP resistor-equipped transistor -- PDTB113EUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113EU Features and benefits 500 mA output current capability Reduces pick and place...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB113ZUF 50 V, 500 mA PNP resistor-equipped transistor -- PDTB113ZUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ZU Features and benefits 500 mA output current capability Reduces pick and place...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB114EUF 50 V, 500 mA PNP resistor-equipped transistor -- PDTB114EUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD114EU Features and benefits 500 mA output current capability Reduces pick and place...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB123EUF 50 V, 500 mA PNP resistor-equipped transistor -- PDTB123EUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123EU Features and benefits 500 mA output current capability Reduces pick and place...
50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTB123YUF 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTB123YUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YU Features and benefits 500 mA output current capability Reduces pick and place...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB143EUF 50 V, 500 mA PNP resistor-equipped transistor -- PDTB143EUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD143EU Features and benefits 500 mA output current capability Reduces pick and place...
50 V, 500 mA PNP resistor-equipped transistor -- PDTB143XUF 50 V, 500 mA PNP resistor-equipped transistor -- PDTB143XUX	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD143XU Features and benefits 500 mA output current capability Reduces pick and place...
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTA114YU,115 PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTA114YUF	PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device(SMD) plastic package. NPN complement: PDTC114YU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTA143TM,315	PNP Resistor-Equipped Transistor (RET) in a very small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ -- PDTA113EM,315	PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open -- PDTA114TM,315	PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTA115TM,315	PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TM Features and benefits Built-in bias resistors Simplified circuit design Reduction of...
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTA123TM,315	PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TM Features and benefits Built-in bias resistors Simplified circuit design Reduction of...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTA124TM,315	PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124TM Features and benefits Built-in bias resistors Simplified circuit design Reduction of...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTA143XM,315	PNP Resistor-Equipped Transistor (RET) in an ultra small SOT883 (SC-101) in Surface-Mounted Device (SMD) plastic package. NPN-complement: PDTC143XM Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTA124XM,315	PNP Resistor-Equipped Transistor (RET) in an ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XM Features and benefits Built-in bias resistors Simplifies circuit design 100 mA output...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTA143ZM,315	PNP Resistor-Equipped Transistor (RET) in an ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143ZM Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTA124EM,315	PNP Resistor-Equipped Transistor (RET) in an ultra small SOT883 (SC-101) Surface-MountedDevic e (SMD) plastic package. NPN complement: PDTC124EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm -- PDTA144WM,315 PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm -- PDTA144WU,115 PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open -- PDTA144TM,315 PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open -- PDTA144TT,215 PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open -- PDTA144TU,115	PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs.
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm -- PDTA144VM,315 PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm -- PDTA144VT,215 PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm -- PDTA144VU,115	PNP resistor-equipped transistors. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs AEC-Q101 qualified Applications General purpose switching and amplification Circuit drivers...
40 V low VCEsat PNP transistor -- PBSS5240V,115	PNP transistor providing low VCEsat and high current capability in a SOT666 ultra small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240V Features and benefits Low collector-emitter saturation voltage...
55V, 2A PNP/PNP low VCEsat (BISS) double transistor -- PBSS5255PAPSX 60 V, 1 A PNP/PNP low VCEsat transistor -- PBSS5160PAPSX	PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features...
60 V, 1 A PNP/PNP low VCEsat double transistor -- PBSS5160PAP,115	PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. Features and...
30 V, 2 A PNP/PNP low VCEsat double transistor -- PBSS5230PAP,115	PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. Features and...
20V, 2 A PNP/PNP low VCEsat double transistor -- PBSS5220PAPSX	PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4220PANS Features and benefits...
60 V, 2 A PNP/PNP low VCEsat double transistor -- PBSS5260PAPSX	PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS Features and benefits...
30 V, 1 A PNP/PNP low VCEsat transistor -- PBSS5130PAP,115	PNP/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP NPN/NPN complement: PBSS4130PAN Features and benefits Very low collector-emitter saturation...
60 V, 1 A PNP/PNP low VCEsat transistor -- PBSS5160DS,115	PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
60 V, 2 A PNP/PNP low VCEsat double transistor -- PBSS5260PAP,115	PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN. Features and benefits...

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