Nexperia B.V. N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN0R9-30YLDX

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

• 300 Amp capability
• Avalanche rated, 100 % tested at I(as) = 190 Amps
• Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150 °C
• Wave solderable; exposed leads for optimal visual solder inspection

Applications

• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control
• Power OR-ing

PSMN0R9-30YLD - N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology SOIC 4-Pin Product overview: PSMN0R9-30YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, 300 A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, 300 A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN0R9-30YLDX can be used for catalog matching and distributor lookup.

N-Channel 30V 300A (Tc) 291W Surface Mount LFPAK56; Power-SO8

N-Channel 30V 300A (Tc) 291W Surface Mount LFPAK56; Power-SO8

N-Channel 30V 300A (Tc) 291W Surface Mount LFPAK56; Power-SO8

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325300-PSMN0R9-30YLDX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 291W
Supplier Device Package: LFPAK56; Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-1023, 4-LFPAK
ECCN: EAR99
Fake Threat In the Open Market: 72
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-11554-6,568-11554-6-ND,568-11554-1,568-11554-2,934068233115,568-11554-1-ND,1727-1858-6,568-11554-2-ND,1727-1858-2,PSMN0R9-30YLDX-ND,1727-1858-1
Base Product Number: PSMN0R9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant

N-Channel MOSFET, 30V, 0.9A, SOT-23

N-Channel MOSFET, 30V, 0.9A, SOT-23