Nexperia B.V. N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN6R1-25MLDX

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

• Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
• Exposed leads for optimal visual solder inspection

Applications

• On-board DC:DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325307-PSMN6R1-25MLDX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Schottky Diode (Body)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 42W (Tc)
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SOT-1210, 8-LFPAK33 (5-Lead)
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-2504-1,1727-2504-2,568-12936-6-ND,568-12936-2,1727-2504-6,568-12936-2-ND,568-12936-1,568-12936-1-ND,568-12936-6,934069918115
Base Product Number: PSMN6R1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant

PSMN6R1-25MLD - N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3tttTechnology Product overview: PSMN6R1-25MLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN6R1-25MLDX can be used for catalog matching and distributor lookup.

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