N-channel MOSFET in LFPAK package (SOT669) rated for 80 V drain-source voltage and 8.5 mΩ maximum on-state resistance at 25°C. It handles continuous drain currents up to 82 A at 25°C and dissipates up to 130 W with proper heat sinking. Junction temperature ranges from -55°C to 175°C. The device features low gate charge (55 nC typ) and qualifies for industrial, communications, and domestic applications including DC-to-DC conversion, motor control, and server power supplies. It is qualified to 175°C and meets IEC 60134 for absolute maximum ratings.
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Features and benefits
Applications
PSMN8R2-80YS - N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET SOIC 4-Pin Product overview: PSMN8R2-80YS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN8R2-80YS,115
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090447-PSMN8R2-80YS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 82A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3640pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
N-Channel 80V 82A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 82A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 82A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8
MOSFET Transistor, N Channel, 82 A, 80 V, 5.8 mohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 80V 82A LFPAK56
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMN8R2-80YS,115 | 278-PSMN8R2-80YS,115 | 1090447-PSMN8R2-80YS,115 | 1727-4272-2-ND | 62R9344 | PSMN8R2-80YS,115 |
| Product Name | N-channel LFPAK 80 V 8.5 mOhm standard level MOSFET | N-Channel 80 V SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN8R2-80YS,115 | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 82 A, 80 V, 5.8 Mohm, 10 V, 3 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| Package Type | SOT669 SOT669 | SOT3; LFPAK56, Power-SO8 | SC-100, SOT-669 | TO-3 | SC-100, SOT-669 | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 80 volts |
