Nexperia B.V. 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PUMB10,115

Description
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 NPN/NPN complement: PUMH10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet
Description
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 NPN/NPN complement: PUMH10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PUMB10,115 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PUMB10,115
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PUMB10,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 NPN/NPN complement: PUMH10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Controlling IC inputs Replaces general-purpose transistors in digital applications

PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PUMD10

NPN/NPN complement: PUMH10

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified

Applications

  • Low current peripheral driver
  • Controlling IC inputs
  • Replaces general-purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - PUMB10,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
PUMB10,115
Bipolar Transistor Arrays, Pre-Biased PUMB10,115
TRANS PREBIAS 2PNP 50V 6TSSOP

TRANS PREBIAS 2PNP 50V 6TSSOP

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMB10,115 - 1090698-PUMB10,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMB10,115
1090698-PUMB10,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMB10,115 1090698-PUMB10,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090698-PUMB10,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSSOP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 100mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090698-PUMB10,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSSOP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 100mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - PUMB10,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-6297-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-6297-6-ND
Bipolar Transistor Arrays, Pre-Biased 1727-6297-6-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-6297-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-6297-2-ND
Bipolar Transistor Arrays, Pre-Biased 1727-6297-2-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-6297-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-6297-1-ND
Bipolar Transistor Arrays, Pre-Biased 1727-6297-1-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia - 92K8273 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia
92K8273
Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia 92K8273
Bipolar (BJT) Array Transistor, BRT, PNP, 50 V, 200 mW, -100 mA, 100, SOT-363 RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, BRT, PNP, 50 V, 200 mW, -100 mA, 100, SOT-363 RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia - 93X4627 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia
93X4627
Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia 93X4627
Bipolar (BJT) Array Transistor, BRT, PNP, 50 V, 200 mW, -100 mA, 100, SOT-363 RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, BRT, PNP, 50 V, 200 mW, -100 mA, 100, SOT-363 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PUMB10,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PUMB10,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PUMB10,115
TRANS PREBIAS 2PNP 50V 6TSSOP

TRANS PREBIAS 2PNP 50V 6TSSOP

Supplier's Site

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) Win Source Electronics Rochester Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PUMB10,115 PUMB10,115 1090698-PUMB10,115 PUMB10,115 1727-6297-6-ND 92K8273 PUMB10,115
Product Name 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMB10,115 Bipolar Transistor Arrays, Pre-Biased Bipolar (Bjt) Array Transistor, Brt, Pnp, 50 V, 200 Mw, -100 Ma, 100, Sot-363 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP 2 PNP - Pre-Biased (Dual); PNP PNP; 2 PNP - Pre-Biased (Dual) PNP PNP PNP
Package Type SOT363 6-TSSOP, SC-88, SOT-363 SOT3; 6-TSSOP SOT363 6-TSSOP, SC-88, SOT-363 TO-3; SOT3 AEC-Q101
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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