Nexperia B.V. N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK PSMN1R5-30BLEJ

Description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses Applications Electronic fuse Hot swap Load switch Soft start
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Description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses Applications Electronic fuse Hot swap Load switch Soft start
Request a Quote
Datasheet
Datasheet Summary
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N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK (SOT404) package with a mounting base connected to the drain, rated for a maximum junction temperature of 175 °C. The device has a drain-source on-state resistance of 1.3 mΩ at V\(_{GS}\) = 10 V and 25 °C, and supports a continuous drain current of 120 A, with a peak pulse current of 1521 A. It features an avalanche energy rating of 1990 mJ and thermal resistance from junction to mounting base of 0.3 to 0.37 K/W. The gate-source threshold voltage ranges from 1.3 V to 2.15 V at 25 °C. The part is qualified for industrial, communications, and domestic applications and meets IEC 60134 absolute maximum rating standards.

Datasheet Summary
Powered by GS/AI

N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK (SOT404) package with a mounting base connected to the drain, rated for a maximum junction temperature of 175 °C. The device has a drain-source on-state resistance of 1.3 mΩ at V\(_{GS}\) = 10 V and 25 °C, and supports a continuous drain current of 120 A, with a peak pulse current of 1521 A. It features an avalanche energy rating of 1990 mJ and thermal resistance from junction to mounting base of 0.3 to 0.37 K/W. The gate-source threshold voltage ranges from 1.3 V to 2.15 V at 25 °C. The part is qualified for industrial, communications, and domestic applications and meets IEC 60134 absolute maximum rating standards.

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK - PSMN1R5-30BLEJ - Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK
PSMN1R5-30BLEJ
N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK PSMN1R5-30BLEJ
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses Applications Electronic fuse Hot swap Load switch Soft start

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features and benefits

  • Enhanced forward biased safe operating area for superior linear mode operation
  • Very low Rdson for low conduction losses

Applications

  • Electronic fuse
  • Hot swap
  • Load switch
  • Soft start
Supplier's Site Datasheet
MOSFETs - 219444 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219444
MOSFETs 219444
N-Channel MOSFET, 30V, 5A, SOT-23

N-Channel MOSFET, 30V, 5A, SOT-23

Supplier's Site
MOSFETs - 219445 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219445
MOSFETs 219445
N-Channel MOSFET, 30V, 5A, SOT-23

N-Channel MOSFET, 30V, 5A, SOT-23

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1010191-PSMN1R5-30BLEJ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1010191-PSMN1R5-30BLEJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1010191-PSMN1R5-30BLEJ
Win Source Part Number: 1010191-PSMN1R5-30BL EJ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 401W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 568-10256-6,1727-110 1-2,568-10256-6-ND,5 68-10256-2,568-10256 -1,1727-1101-6,93406 7368118,568-10256-1- ND,568-10256-2-ND,17 27-1101-1,PSMN1R5-30 BLEJ-ND Base Product Number: PSMN1R5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1010191-PSMN1R5-30BLEJ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 401W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-10256-6,1727-1101-2,568-10256-6-ND,568-10256-2,568-10256-1,1727-1101-6,934067368118,568-10256-1-ND,568-10256-2-ND,1727-1101-1,PSMN1R5-30BLEJ-ND
Base Product Number: PSMN1R5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore, Singapore
30V MOSFET Transistor
278-PSMN1R5-30BLEJ
30V MOSFET Transistor 278-PSMN1R5-30BLEJ
N-Ch MOSFET, 30V, 1.5mΩ, Logic Level, D2PAK Product overview: PSMN1R5-30BLEJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R5-30BLEJ can be used for catalog matching and distributor lookup.

N-Ch MOSFET, 30V, 1.5mΩ, Logic Level, D2PAK Product overview: PSMN1R5-30BLEJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R5-30BLEJ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1101-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1101-1-ND
Single FETs, MOSFETs 1727-1101-1-ND
N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK

N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1101-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1101-6-ND
Single FETs, MOSFETs 1727-1101-6-ND
N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK

N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1101-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1101-2-ND
Single FETs, MOSFETs 1727-1101-2-ND
N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK

N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - PSMN1R5-30BLEJ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN1R5-30BLEJ
Single FETs, MOSFETs PSMN1R5-30BLEJ
MOSFET N-CH 30V 120A D2PAK

MOSFET N-CH 30V 120A D2PAK

Supplier's Site Datasheet
MOSFET N-CH 30V 120A D2PAK - 554-PSMN1R5-30BLEJ - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 120A D2PAK
554-PSMN1R5-30BLEJ
MOSFET N-CH 30V 120A D2PAK 554-PSMN1R5-30BLEJ
MOSFET N-CH 30V 120A D2PAK

MOSFET N-CH 30V 120A D2PAK

Supplier's Site
Mosfet Transistor, N Channel, 120 A, 30 V, 0.0013 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia - 55W5043 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 120 A, 30 V, 0.0013 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia
55W5043
Mosfet Transistor, N Channel, 120 A, 30 V, 0.0013 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia 55W5043
MOSFET Transistor, N Channel, 120 A, 30 V, 0.0013 ohm, 10 V, 1.7 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 120 A, 30 V, 0.0013 ohm, 10 V, 1.7 V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 30 V 1.5 mo FET

MOSFET N-channel 30 V 1.5 mo FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R5-30BLEJ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN1R5-30BLEJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN1R5-30BLEJ
MOSFET N-CH 30V 120A D2PAK

MOSFET N-CH 30V 120A D2PAK

Supplier's Site

Technical Specifications

  Nexperia B.V. RS Components, Ltd. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN1R5-30BLEJ 219444 1010191-PSMN1R5-30BLEJ 278-PSMN1R5-30BLEJ 1727-1101-1-ND PSMN1R5-30BLEJ 554-PSMN1R5-30BLEJ 55W5043 PSMN1R5-30BLEJ PSMN1R5-30BLEJ
Product Name N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 30V MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET N-CH 30V 120A D2PAK Mosfet Transistor, N Channel, 120 A, 30 V, 0.0013 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 120000 milliamps 120000 milliamps
VGS(off) 20 volts
PD 401 milliwatts 401000 milliwatts 401000 milliwatts 401000 milliwatts
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