Nexperia B.V. N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN6R4-30MLDX

Description
Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
  • N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology - PSMN6R4-30MLDX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-2219-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2219-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2219-6-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN6R4-30MLDX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
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Datasheet
Datasheet Summary
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N-channel 30 V logic level MOSFET in an LFPAK33 (SOT1210) package with a drain-source on-state resistance of 6.9 mΩ at 4.5 V gate drive and 25 °C. It features NextPowerS3 technology with Schottky-like body diode performance and leakage under 1 µA at 25 °C, optimized for 4.5 V gate drive. The device supports continuous drain current up to 66 A at 25 °C and total power dissipation of 51 W, with a junction temperature rating of 175 °C. It is qualified to IEC 60134 and offers low parasitic inductance, exposed leads for solder inspection, and superfast switching with soft-recovery and s-factor greater than 1.

Datasheet Summary
Powered by GS/AI

N-channel 30 V logic level MOSFET in an LFPAK33 (SOT1210) package with a drain-source on-state resistance of 6.9 mΩ at 4.5 V gate drive and 25 °C. It features NextPowerS3 technology with Schottky-like body diode performance and leakage under 1 µA at 25 °C, optimized for 4.5 V gate drive. The device supports continuous drain current up to 66 A at 25 °C and total power dissipation of 51 W, with a junction temperature rating of 175 °C. It is qualified to IEC 60134 and offers low parasitic inductance, exposed leads for solder inspection, and superfast switching with soft-recovery and s-factor greater than 1.

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology - PSMN6R4-30MLDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
PSMN6R4-30MLDX
N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN6R4-30MLDX
Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2219-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2219-2-ND
Single FETs, MOSFETs 1727-2219-2-ND
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33

N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2219-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2219-1-ND
Single FETs, MOSFETs 1727-2219-1-ND
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33

N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2219-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2219-6-ND
Single FETs, MOSFETs 1727-2219-6-ND
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33

N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN6R4-30MLDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN6R4-30MLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN6R4-30MLDX
MOSFET N-CH 30V 66A LFPAK33

MOSFET N-CH 30V 66A LFPAK33

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PSMN6R4-30MLDX
MOSFET PSMN6R4-30MLDX
MOSFET PSMN6R4-30MLD/MLFPAK /REEL 7" Q

MOSFET PSMN6R4-30MLD/MLFPAK/REEL 7" Q

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Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN6R4-30MLDX 1727-2219-2-ND PSMN6R4-30MLDX PSMN6R4-30MLDX
Product Name N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 66000 milliamps
VGS(off) 20 volts
PD 51 milliwatts
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