Nexperia B.V. N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN2R4-30YLDX

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

• Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection

Applications

• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control

PSMN2R4-30YLD - N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology SOIC 4-Pin Product overview: PSMN2R4-30YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN2R4-30YLDX can be used for catalog matching and distributor lookup.

N-Channel 30V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 30V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 30V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel MOSFET, 30V, 2.4A, SOT-23

N-Channel MOSFET, 30V, 2.4A, SOT-23

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 792622-PSMN2R4-30YLDX
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SC-100, SOT-669
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: PSMN2R4-30YLD
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: LFPAK56, Power-SO8
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 31.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2256pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 106W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): RJK0328DPB-01#J0; RJK0329DPB-00-J0; RJK0328DPB-01-J0; RJK0328DPB-00-J0;
Introduction Date: July 28, 2013
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited