Nexperia B.V. Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive... | |
| Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond... | |
| Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101... | |
| Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101... | |
| Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very... | |
| Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance... | |
| Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive... | |
| Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive... | |
| Dual, Logic level N-channel MOSFET in an LFPAK56D package, using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications... | |
| Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity PCB shrinkage through reduced component footprint for 3-phase motor drive Improved system level Rth(j-amb) due to... | |
| Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications... | |
| Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in... | |
| Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and... | |
| Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. | |
| Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Extended temperature range... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Extremely fast switching Logic... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench... | |
| N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Direct interface to Complementary (C-MOS)... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST60 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST61 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST62 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Applications General purpose... | |
| NPN switching transistor in a SOT23 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 12 V). AEC-Q101 qualified Applications High speed saturated switching applications, especially... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks... | |
| P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use... | |
| P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. Features and benefits Direct interface to Complementary... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST50 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST51 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST52 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 100 V) Applications High-voltage general purpose Switching... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate... | |
| Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC... | |
| Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in... | |
| Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and... | |
| Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features... | |
| Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. | |
| Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive... | |
| Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. |
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