Nexperia B.V. N-channel 30 V 3 mOhm logic level MOSFET in LFPAK PSMN3R0-30YL,115

Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies
Request a Quote Datasheet
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V 3 mOhm logic level MOSFET in LFPAK - PSMN3R0-30YL,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V 3 mOhm logic level MOSFET in LFPAK
PSMN3R0-30YL,115
N-channel 30 V 3 mOhm logic level MOSFET in LFPAK PSMN3R0-30YL,115
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Suitable for logic level gate drive sources

Applications

  • Class-D amplifiers
  • DC-to-DC converters
  • Motor control
  • Server power supplies
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-4165-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4165-2-ND
Single FETs, MOSFETs 1727-4165-2-ND
N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4165-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4165-1-ND
Single FETs, MOSFETs 1727-4165-1-ND
N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4165-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4165-6-ND
Single FETs, MOSFETs 1727-4165-6-ND
N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN3R0-30YL,115 - 1090395-PSMN3R0-30YL,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN3R0-30YL,115
1090395-PSMN3R0-30YL,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN3R0-30YL,115 1090395-PSMN3R0-30YL,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090395-PSMN3R0-30YL ,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 81W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.15V @ 1mA Max Gate Charge: 45.8nC @ 10V Max Input Capacitance: 2822pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090395-PSMN3R0-30YL,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 81W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.15V @ 1mA
Max Gate Charge: 45.8nC @ 10V
Max Input Capacitance: 2822pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 30V MOSFET Transistor
278-PSMN3R0-30YL,115
N-Channel 30V MOSFET Transistor 278-PSMN3R0-30YL,115
N-Channel MOSFET, 30V, 3mΩ, Logic Level, LFPAK Product overview: PSMN3R0-30YL,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN3R0-30YL,115 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 30V, 3mΩ, Logic Level, LFPAK Product overview: PSMN3R0-30YL,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN3R0-30YL,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN3R0-30YL,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN3R0-30YL,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN3R0-30YL,115
MOSFET N-CH 30V 100A LFPAK56

MOSFET N-CH 30V 100A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN3R0-30YL,115 1727-4165-2-ND 1090395-PSMN3R0-30YL,115 278-PSMN3R0-30YL,115 PSMN3R0-30YL,115
Product Name N-channel 30 V 3 mOhm logic level MOSFET in LFPAK Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN3R0-30YL,115 N-Channel 30V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
Package Type SOT669 SC-100, SOT-669 SOT3; LFPAK56, Power-SO8 SC-100, SOT-669
Polarity N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts
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