Nexperia B.V. N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN6R0-25YLDX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
  • N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN6R0-25YLDX - Nexperia B.V.
    Nexperia B.V.
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Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
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Datasheet
Datasheet Summary
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N-channel 25 V logic level MOSFET in LFPAK56 (SOT669) package using NextPowerS3 technology, optimized for 4.5 V gate drive. The device features ultra-low gate charge, superfast switching with soft-recovery, and Schottky-like performance with less than 1 µA leakage at 25 °C. It has a drain-source on-state resistance of 6.75 mΩ at 10 V gate drive and 25 °C, with continuous drain current rating of 61 A at 25 °C and total power dissipation of 43 W. The package is clip bonded and solder die attach, qualified to 175 °C, and wave solderable with exposed leads for visual inspection. Applications include DC:DC conversion, synchronous rectification, VRM, POL, and motor control. The device meets IEC 60134 absolute maximum ratings and has avalanche energy rating of 50.9 mJ.

Datasheet Summary
Powered by GS/AI

N-channel 25 V logic level MOSFET in LFPAK56 (SOT669) package using NextPowerS3 technology, optimized for 4.5 V gate drive. The device features ultra-low gate charge, superfast switching with soft-recovery, and Schottky-like performance with less than 1 µA leakage at 25 °C. It has a drain-source on-state resistance of 6.75 mΩ at 10 V gate drive and 25 °C, with continuous drain current rating of 61 A at 25 °C and total power dissipation of 43 W. The package is clip bonded and solder die attach, qualified to 175 °C, and wave solderable with exposed leads for visual inspection. Applications include DC:DC conversion, synchronous rectification, VRM, POL, and motor control. The device meets IEC 60134 absolute maximum ratings and has avalanche energy rating of 50.9 mJ.

Suppliers

Company
Product
Description
Supplier Links
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN6R0-25YLDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
PSMN6R0-25YLDX
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN6R0-25YLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2500-2-ND - DigiKey
DigiKey
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N-Channel 25V 61A (Tc) 43W (Tc) Surface Mount LFPAK56, Power-SO8

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DigiKey
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Single FETs, MOSFETs
1727-2500-6-ND
Single FETs, MOSFETs 1727-2500-6-ND
N-Channel 25V 61A (Tc) 43W (Tc) Surface Mount LFPAK56, Power-SO8

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Corby, Northants, United Kingdom
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MOSFETs
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Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN6R0-25YLDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN6R0-25YLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN6R0-25YLDX
MOSFET N-CH 25V 61A LFPAK56

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
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Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN6R0-25YLDX 1727-2500-2-ND 219495 PSMN6R0-25YLDX PSMN6R0-25YLDX
Product Name N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 25 volts
IDSS 61000 milliamps
VGS(off) 20 volts
PD 43 milliwatts
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