Nexperia B.V. N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 PSMN0R9-30ULDX

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications.

Features and benefits

• Improved creepage and clearance – meets the requirements of UL2595
• 300 A capability
• Avalanche rated, 100% tested at I_AS = 190 A
• Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150 °C
• Wave solderable; exposed leads for optimal visual solder inspection

Applications

• Brushed and brushless motor control
• Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
• For non-UL2595 applications please use PSMN0R9-30YLD

N-Channel 30V 300A (Ta) 227W (Ta) Surface Mount LFPAK56, Power-SO8

MOSFET N-CH 30V 300A LFPAK56

MOSFET N-CH 30V 300A LFPAK56

Win Source Part Number: 1278240-PSMN0R9-30ULDX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 300A (Ta)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 227W (Ta)
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934660145115
Base Product Number: PSMN0R9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

MOSFET N-CH 30V 300A LFPAK56 Product overview: PSMN0R9-30ULDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 300A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 300A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN0R9-30ULDX can be used for catalog matching and distributor lookup.