PSMN3R9-60PS - N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 TO-220 3-Pin Product overview: PSMN3R9-60PSQ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN3R9-60PSQ can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090408-PSMN3R9-60PS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 263W (Tc)
Family Name: PSMN3R9-60PS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 103nC @ 10V
Max Input Capacitance: 5600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): STP190N55LF3; STP150NF55; STP80N6F6;
Introduction Date: September 27, 2012
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
N-Channel 60V 130A (Tc) 263W (Tc) Through Hole TO-220AB
MOSFET N-CH 60V 130A TO220AB
MOSFET N-channel 60 V 3.9 mo FET
MOSFET N-CH 60V 130A TO220AB
MOSFET Transistor, N Channel, 130 A, 60 V, 0.00294 ohm, 10 V, 3 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-PSMN3R9-60PSQ | 1090408-PSMN3R9-60PSQ | 1727-1133-ND | PSMN3R9-60PSQ | PSMN3R9-60PSQ | PSMN3R9-60PSQ | 90W9538 |
| Product Name | N-Channel 60 V TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN3R9-60PSQ | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 130 A, 60 V, 0.00294 Ohm, 10 V, 3 V Rohs Compliant Nexperia |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 263000 milliwatts | 263000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |