Nexperia B.V. N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN0R9-25YLDX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 100% Avalanche tested at I(AS) = 190 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing
Request a Quote Datasheet
Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 100% Avalanche tested at I(AS) = 190 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN0R9-25YLDX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
PSMN0R9-25YLDX
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN0R9-25YLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 100% Avalanche tested at I(AS) = 190 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • 100% Avalanche tested at I(AS) = 190 A
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
  • Power OR-ing
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN0R9-25YLDX - 930913-PSMN0R9-25YLDX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN0R9-25YLDX
930913-PSMN0R9-25YLDX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN0R9-25YLDX 930913-PSMN0R9-25YLDX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 930913-PSMN0R9-25YLD X Operating Temperature Range: -55°C ~ 175°C (TJ) Features: N-Channel 25 V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8 Package: SC-100, SOT-669 Package: Reel - TR Mounting: Surface Mount Family Name: PSMN0R9 Categories: Discrete Semiconductor Products Case / Package: LFPAK56, Power-SO8 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 1500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 26 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 568-12926-1-ND, 568-12926-2-ND, 1727-2494-6, 568-12926-1, 568-12926-2, 568-12926-6-ND, 1727-2494-2, 934069907115, 1727-2494-1, 568-12926-6

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930913-PSMN0R9-25YLDX
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 25 V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
Package: SC-100, SOT-669
Package: Reel - TR
Mounting: Surface Mount
Family Name: PSMN0R9
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-12926-1-ND, 568-12926-2-ND, 1727-2494-6, 568-12926-1, 568-12926-2, 568-12926-6-ND, 1727-2494-2, 934069907115, 1727-2494-1, 568-12926-6

Buy Now Datasheet
MOSFETs - 219306 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219306
MOSFETs 219306
N-Channel MOSFET, 25V, 0.9A, SOT-23

N-Channel MOSFET, 25V, 0.9A, SOT-23

Supplier's Site
MOSFETs - 219307 - RS Components, Ltd.
Corby, Northants, United Kingdom
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N-Channel MOSFET, 25V, 0.9A, SOT-23

Supplier's Site
 - PSMN0R9-25YLDX - Rochester Electronics
Newburyport, MA, United States
N-channel 25 V, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

N-channel 25 V, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2494-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2494-6-ND
Single FETs, MOSFETs 1727-2494-6-ND
N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

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Single FETs, MOSFETs - 1727-2494-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2494-2-ND
Single FETs, MOSFETs 1727-2494-2-ND
N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

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Single FETs, MOSFETs - 1727-2494-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2494-1-ND
Single FETs, MOSFETs 1727-2494-1-ND
N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Singapore
N-Channel 25 V 300 A SOIC MOSFET Transistor
278-PSMN0R9-25YLDX
N-Channel 25 V 300 A SOIC MOSFET Transistor 278-PSMN0R9-25YLDX
PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechno logy SOIC 4-Pin Product overview: PSMN0R9-25YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25 V, 300 A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25 V, 300 A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN0R9-25YLDX can be used for catalog matching and distributor lookup.

PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology SOIC 4-Pin Product overview: PSMN0R9-25YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25 V, 300 A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25 V, 300 A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN0R9-25YLDX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - PSMN0R9-25YLDX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN0R9-25YLDX
Single FETs, MOSFETs PSMN0R9-25YLDX
MOSFET N-CH 25V 300A LFPAK56

MOSFET N-CH 25V 300A LFPAK56

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN0R9-25YLDX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN0R9-25YLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN0R9-25YLDX
MOSFET N-CH 25V 300A LFPAK56

MOSFET N-CH 25V 300A LFPAK56

Supplier's Site
Mosfet, N-Ch, 25V, 300A, Sot-669-4; Transistor Polarity Nexperia - 84Y6414 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25V, 300A, Sot-669-4; Transistor Polarity Nexperia
84Y6414
Mosfet, N-Ch, 25V, 300A, Sot-669-4; Transistor Polarity Nexperia 84Y6414
MOSFET, N-CH, 25V, 300A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:25V; On Resistance Rds(on):720µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.73V; Power RoHS Compliant: Yes

MOSFET, N-CH, 25V, 300A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:25V; On Resistance Rds(on):720µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.73V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PSMN0R9-25YLD/LFPAK/ REEL 7" Q1

MOSFET PSMN0R9-25YLD/LFPAK/REEL 7" Q1

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics RS Components, Ltd. Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN0R9-25YLDX 930913-PSMN0R9-25YLDX 219306 PSMN0R9-25YLDX 1727-2494-6-ND 278-PSMN0R9-25YLDX PSMN0R9-25YLDX PSMN0R9-25YLDX 84Y6414 PSMN0R9-25YLDX
Product Name N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN0R9-25YLDX MOSFETs Single FETs, MOSFETs N-Channel 25 V 300 A SOIC MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 25V, 300A, Sot-669-4; Transistor Polarity Nexperia MOSFET
MOSFET Operating Mode Enhancement
Package Type SOT669 SOT3; LFPAK56, Power-SO8 LFPAK SOT669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 TO-3
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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