Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930913-PSMN0R9-25YLD
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 25 V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
Package: SC-100, SOT-669
Package: Reel - TR
Mounting: Surface Mount
Family Name: PSMN0R9
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-12926-1-ND, 568-12926-2-ND, 1727-2494-6, 568-12926-1, 568-12926-2, 568-12926-6-ND, 1727-2494-2, 934069907115, 1727-2494-1, 568-12926-6
N-Channel MOSFET, 25V, 0.9A, SOT-23
N-Channel MOSFET, 25V, 0.9A, SOT-23
N-channel 25 V, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechno
MOSFET N-CH 25V 300A LFPAK56
MOSFET N-CH 25V 300A LFPAK56
MOSFET, N-CH, 25V, 300A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:25V; On Resistance Rds(on):720µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.73V; Power RoHS Compliant: Yes
MOSFET PSMN0R9-25YLD/LFPAK/
| Nexperia B.V. | Win Source Electronics | RS Components, Ltd. | Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PSMN0R9-25YLDX | 930913-PSMN0R9-25YLDX | 219306 | PSMN0R9-25YLDX | 1727-2494-6-ND | 278-PSMN0R9-25YLDX | PSMN0R9-25YLDX | PSMN0R9-25YLDX | 84Y6414 | PSMN0R9-25YLDX |
| Product Name | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN0R9-25YLDX | MOSFETs | Single FETs, MOSFETs | N-Channel 25 V 300 A SOIC MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 300A, Sot-669-4; Transistor Polarity Nexperia | MOSFET | |
| MOSFET Operating Mode | Enhancement | |||||||||
| Package Type | SOT669 | SOT3; LFPAK56, Power-SO8 | LFPAK | SOT669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |