Nexperia B.V. N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology PSMN1R6-30MLHX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. Features and benefits Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive 160 A rated High reliability copper-clip bonded and solder die attach LFPAK33 package Qualified to 175 °C Exposed leads for optimal visual solder inspection Applications DC switch / load switch USB-PD and fast-charge Battery protection OR-ing and hot-swap Synchronous rectifier in AC-DC and DC-DC applications Brushed and BLDC (brushless) motor control
Request a Quote Datasheet
Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. Features and benefits Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive 160 A rated High reliability copper-clip bonded and solder die attach LFPAK33 package Qualified to 175 °C Exposed leads for optimal visual solder inspection Applications DC switch / load switch USB-PD and fast-charge Battery protection OR-ing and hot-swap Synchronous rectifier in AC-DC and DC-DC applications Brushed and BLDC (brushless) motor control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology - PSMN1R6-30MLHX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
PSMN1R6-30MLHX
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology PSMN1R6-30MLHX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. Features and benefits Optimized for low RDSon Low leakage < 1 µA at 25 °C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive 160 A rated High reliability copper-clip bonded and solder die attach LFPAK33 package Qualified to 175 °C Exposed leads for optimal visual solder inspection Applications DC switch / load switch USB-PD and fast-charge Battery protection OR-ing and hot-swap Synchronous rectifier in AC-DC and DC-DC applications Brushed and BLDC (brushless) motor control

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications.

Features and benefits

  • Optimized for low RDSon
  • Low leakage < 1 µA at 25 °C
  • Low spiking and ringing for low EMI designs
  • Optimized for 4.5 V gate drive
  • 160 A rated
  • High reliability copper-clip bonded and solder die attach LFPAK33 package
  • Qualified to 175 °C
  • Exposed leads for optimal visual solder inspection

Applications

  • DC switch / load switch
  • USB-PD and fast-charge
  • Battery protection
  • OR-ing and hot-swap
  • Synchronous rectifier in AC-DC and DC-DC applications
  • Brushed and BLDC (brushless) motor control
Supplier's Site Datasheet
Singapore, Singapore
30V 160A MOSFET Transistor
278-PSMN1R6-30MLHX
30V 160A MOSFET Transistor 278-PSMN1R6-30MLHX
MOSFET N-CH 30V 160A LFPAK33 Product overview: PSMN1R6-30MLHX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 160A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 160A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R6-30MLHX can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 160A LFPAK33 Product overview: PSMN1R6-30MLHX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 160A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 160A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R6-30MLHX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - PSMN1R6-30MLHX - Rochester Electronics
Newburyport, MA, United States
PSMN1R6-30MLH - N-channel 30 V, 160 A logic level MOSFET in LFPAK33

PSMN1R6-30MLH - N-channel 30 V, 160 A logic level MOSFET in LFPAK33

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324766-PSMN1R6-30MLHX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324766-PSMN1R6-30MLHX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324766-PSMN1R6-30MLHX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1324766-PSMN1R6-30ML HX Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 1,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 160A Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 106W Supplier Device Package: LFPAK33 Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2369 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: SOT-1210, 8-LFPAK33 (5-Lead) ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: PSMN1R6-30MLHX-ND,17 27-8594-2,1727-8594- 1,934660071115,1727- 8594-6 Base Product Number: PSMN1R6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1324766-PSMN1R6-30MLHX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 160A
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 106W
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2369 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SOT-1210, 8-LFPAK33 (5-Lead)
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: PSMN1R6-30MLHX-ND,1727-8594-2,1727-8594-1,934660071115,1727-8594-6
Base Product Number: PSMN1R6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8594-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8594-2-ND
Single FETs, MOSFETs 1727-8594-2-ND
N-Channel 30V 160A (Ta) 106W (Ta) Surface Mount LFPAK33

N-Channel 30V 160A (Ta) 106W (Ta) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8594-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8594-1-ND
Single FETs, MOSFETs 1727-8594-1-ND
N-Channel 30V 160A (Ta) 106W (Ta) Surface Mount LFPAK33

N-Channel 30V 160A (Ta) 106W (Ta) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8594-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8594-6-ND
Single FETs, MOSFETs 1727-8594-6-ND
N-Channel 30V 160A (Ta) 106W (Ta) Surface Mount LFPAK33

N-Channel 30V 160A (Ta) 106W (Ta) Surface Mount LFPAK33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R6-30MLHX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN1R6-30MLHX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN1R6-30MLHX
MOSFET N-CH 30V 160A LFPAK33

MOSFET N-CH 30V 160A LFPAK33

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PSMN1R6-30MLH/SOT121 0/mLFPAK

MOSFET PSMN1R6-30MLH/SOT1210/mLFPAK

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Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN1R6-30MLHX 278-PSMN1R6-30MLHX PSMN1R6-30MLHX 1324766-PSMN1R6-30MLHX 1727-8594-2-ND PSMN1R6-30MLHX PSMN1R6-30MLHX
Product Name N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30V 160A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 160000 milliamps
VGS(off) 20 volts
PD 106 milliwatts 106 milliwatts 106000 milliwatts
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