Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1324766-PSMN1R6-30ML
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 160A
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 106W
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2369 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SOT-1210, 8-LFPAK33 (5-Lead)
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: PSMN1R6-30MLHX-ND,17
Base Product Number: PSMN1R6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 30V 160A LFPAK33 Product overview: PSMN1R6-30MLHX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 160A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 160A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R6-30MLHX can be used for catalog matching and distributor lookup.
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| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMN1R6-30MLHX | 1324766-PSMN1R6-30MLHX | 278-PSMN1R6-30MLHX | 1727-8594-2-ND | PSMN1R6-30MLHX | PSMN1R6-30MLHX | PSMN1R6-30MLHX |
| Product Name | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 30V 160A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 160000 milliamps | ||||||
| VGS(off) | 20 volts | ||||||
| PD | 106 milliwatts | 106000 milliwatts | 106 milliwatts |