Nexperia B.V. N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN7R5-30MLDX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
Request a Quote Datasheet
Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology - PSMN7R5-30MLDX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
PSMN7R5-30MLDX
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN7R5-30MLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1794-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1794-2-ND
Single FETs, MOSFETs 1727-1794-2-ND
N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33

N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1794-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1794-1-ND
Single FETs, MOSFETs 1727-1794-1-ND
N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33

N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1794-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1794-6-ND
Single FETs, MOSFETs 1727-1794-6-ND
N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33

N-Channel 30V 57A (Tc) 45W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
MOSFETs - 219498 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219498
MOSFETs 219498
N-Channel MOSFET, 30V, 7.5A, SOT-23

N-Channel MOSFET, 30V, 7.5A, SOT-23

Supplier's Site
MOSFETs - 219496 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219496
MOSFETs 219496
N-Channel MOSFET, 30V, 7.5A, SOT-23

N-Channel MOSFET, 30V, 7.5A, SOT-23

Supplier's Site
Singapore
N-Channel 30 V MOSFET Transistor
278-PSMN7R5-30MLDX
N-Channel 30 V MOSFET Transistor 278-PSMN7R5-30MLDX
PSMN7R5-30MLD - N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Product overview: PSMN7R5-30MLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN7R5-30MLDX can be used for catalog matching and distributor lookup.

PSMN7R5-30MLD - N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Product overview: PSMN7R5-30MLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN7R5-30MLDX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R5-30MLDX - 792636-PSMN7R5-30MLDX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R5-30MLDX
792636-PSMN7R5-30MLDX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R5-30MLDX 792636-PSMN7R5-30MLDX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 792636-PSMN7R5-30MLD X Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-1210, 8-LFPAK33 (5-Lead) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Family Name: PSMN7R5-30MLD Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: LFPAK33 Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 655pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 45W (Tc) Rds On (Maximum) @ Id, Vgs: 7.6 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): PSMN7R5-30MLD; Introduction Date: October 01, 2013 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 792636-PSMN7R5-30MLDX
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Family Name: PSMN7R5-30MLD
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: LFPAK33
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 655pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 45W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.6 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): PSMN7R5-30MLD;
Introduction Date: October 01, 2013
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Mosfet, N Ch, 30V, 57A, Lfpak33 Rohs Compliant Nexperia - 74AH1208 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 57A, Lfpak33 Rohs Compliant Nexperia
74AH1208
Mosfet, N Ch, 30V, 57A, Lfpak33 Rohs Compliant Nexperia 74AH1208
MOSFET, N CH, 30V, 57A, LFPAK33 ROHS COMPLIANT: YES

MOSFET, N CH, 30V, 57A, LFPAK33 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V N-Channel 7.5mOhm

MOSFET 30V N-Channel 7.5mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN7R5-30MLDX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN7R5-30MLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN7R5-30MLDX
MOSFET N-CH 30V 57A LFPAK33

MOSFET N-CH 30V 57A LFPAK33

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN7R5-30MLDX 1727-1794-2-ND 219498 278-PSMN7R5-30MLDX 792636-PSMN7R5-30MLDX 74AH1208 PSMN7R5-30MLDX PSMN7R5-30MLDX
Product Name N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Single FETs, MOSFETs MOSFETs N-Channel 30 V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R5-30MLDX Mosfet, N Ch, 30V, 57A, Lfpak33 Rohs Compliant Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 57000 milliamps
VGS(off) 20 volts
PD 45 milliwatts 45000 milliwatts
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