Nexperia B.V. N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN1R7-25YLDX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 100% Avalanche tested at I(AS) = 142 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
  • N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN1R7-25YLDX - Nexperia B.V.
    Nexperia B.V.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1356470-PSMN1R7-25YLDX - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 1727-2497-6-ND - DigiKey
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  • Single FETs, MOSFETs - 1727-2497-1-ND - DigiKey
    DigiKey
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    DigiKey
  • MOSFETs - 219281 - RS Components, Ltd.
    RS Components, Ltd.
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    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R7-25YLDX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 25V, 100A, Sot-669-4; Transistor Polarity Nexperia - 83Y6965 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 100% Avalanche tested at I(AS) = 142 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
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Datasheet
Datasheet Summary
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N-channel 25 V logic level MOSFET in LFPAK56 (SOT669) package for high-efficiency switching applications such as DC-DC conversion and point-of-load regulation. Features a drain-source on-state resistance of 1.53 mΩ at 10 V gate drive and 2.03 mΩ at 4.5 V gate drive, both at 25 °C, with a continuous drain current of 200 A at 25 °C mounting base temperature. The device supports 100% avalanche testing at 142 A and operates with a junction temperature range of -55 °C to 175 °C. The LFPAK56 package uses clip bonding and solder die attach with no glue or wire bonds, is wave solderable, and has exposed leads for visual inspection. NextPowerS3 technology with SchottkyPlus delivers low leakage (<1 µA at 25 °C), low Qgd and Qoss for reduced switching losses, and soft-recovery characteristics. Qualified to 175 °C and compliant with IEC 60134 absolute maximum ratings.

Datasheet Summary
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N-channel 25 V logic level MOSFET in LFPAK56 (SOT669) package for high-efficiency switching applications such as DC-DC conversion and point-of-load regulation. Features a drain-source on-state resistance of 1.53 mΩ at 10 V gate drive and 2.03 mΩ at 4.5 V gate drive, both at 25 °C, with a continuous drain current of 200 A at 25 °C mounting base temperature. The device supports 100% avalanche testing at 142 A and operates with a junction temperature range of -55 °C to 175 °C. The LFPAK56 package uses clip bonding and solder die attach with no glue or wire bonds, is wave solderable, and has exposed leads for visual inspection. NextPowerS3 technology with SchottkyPlus delivers low leakage (<1 µA at 25 °C), low Qgd and Qoss for reduced switching losses, and soft-recovery characteristics. Qualified to 175 °C and compliant with IEC 60134 absolute maximum ratings.

Suppliers

Company
Product
Description
Supplier Links
N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN1R7-25YLDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
PSMN1R7-25YLDX
N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN1R7-25YLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 100% Avalanche tested at I(AS) = 142 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • 100% Avalanche tested at I(AS) = 142 A
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1356470-PSMN1R7-25YLDX - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1356470-PSMN1R7-25YLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1356470-PSMN1R7-25YLDX
Win Source Part Number: 1356470-PSMN1R7-25YL DX Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 30 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Package: Tape & Reel Product Status: Active Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Base Product Number: PSMN1R7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 135W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1356470-PSMN1R7-25YLDX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 30 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Base Product Number: PSMN1R7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 135W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 25 V 170 A SOIC MOSFET Transistor
278-PSMN1R7-25YLDX
N-Channel 25 V 170 A SOIC MOSFET Transistor 278-PSMN1R7-25YLDX
PSMN1R7-25YLD - N-channel 25 V, 1.75 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechno logy SOIC 4-Pin Product overview: PSMN1R7-25YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25 V, 170 A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25 V, 170 A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R7-25YLDX can be used for catalog matching and distributor lookup.

PSMN1R7-25YLD - N-channel 25 V, 1.75 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology SOIC 4-Pin Product overview: PSMN1R7-25YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25 V, 170 A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25 V, 170 A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R7-25YLDX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2497-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2497-6-ND
Single FETs, MOSFETs 1727-2497-6-ND
N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2497-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2497-1-ND
Single FETs, MOSFETs 1727-2497-1-ND
N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

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Single FETs, MOSFETs - 1727-2497-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2497-2-ND
Single FETs, MOSFETs 1727-2497-2-ND
N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

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MOSFETs - 219281 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219281
MOSFETs 219281
N-Channel MOSFET, 25V, 1.7A, SOT-23

N-Channel MOSFET, 25V, 1.7A, SOT-23

Supplier's Site
MOSFETs - 219280 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219280
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Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R7-25YLDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN1R7-25YLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN1R7-25YLDX
MOSFET N-CH 25V 100A LFPAK56

MOSFET N-CH 25V 100A LFPAK56

Supplier's Site
Mosfet, N-Ch, 25V, 100A, Sot-669-4; Transistor Polarity Nexperia - 83Y6965 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25V, 100A, Sot-669-4; Transistor Polarity Nexperia
83Y6965
Mosfet, N-Ch, 25V, 100A, Sot-669-4; Transistor Polarity Nexperia 83Y6965
MOSFET, N-CH, 25V, 100A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00153ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes

MOSFET, N-CH, 25V, 100A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00153ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PSMN1R7-25YLDX
MOSFET PSMN1R7-25YLDX
MOSFET PSMN1R7-25YLD/LFPAK/ REEL 7" Q1

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Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN1R7-25YLDX 1356470-PSMN1R7-25YLDX 278-PSMN1R7-25YLDX 1727-2497-6-ND 219281 PSMN1R7-25YLDX 83Y6965 PSMN1R7-25YLDX
Product Name N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs N-Channel 25 V 170 A SOIC MOSFET Transistor Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 25V, 100A, Sot-669-4; Transistor Polarity Nexperia MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 25 volts
IDSS 200000 milliamps 100000 milliamps
VGS(off) 20 volts
PD 135 milliwatts 135000 milliwatts
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