Nexperia B.V. N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN1R7-25YLDX

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

• 100% Avalanche tested at I_(AS) = 142 A
• Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection

Applications

• On-board DC:DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control

N-Channel MOSFET, 25V, 1.7A, SOT-23

N-Channel MOSFET, 25V, 1.7A, SOT-23

PSMN1R7-25YLD - N-channel 25 V, 1.75 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology SOIC 4-Pin Product overview: PSMN1R7-25YLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25 V, 170 A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25 V, 170 A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN1R7-25YLDX can be used for catalog matching and distributor lookup.

N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 25V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8

Win Source Part Number: 1356470-PSMN1R7-25YLDX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 30 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Base Product Number: PSMN1R7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 135W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99