N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C, designed for high-performance power switching applications. The device features a Schottky-Plus body-diode, low gate charge for high efficiency and low EMI, and is avalanche rated with 100% testing at 160 A. Maximum continuous drain current is 180 A at T<sub>mb</sub> = 25 °C, with a drain-source on-state resistance of 1.9 mΩ to 2.2 mΩ at 25 °C. The package supports wave soldering and has low parasitic inductance and resistance. Applications include synchronous rectification, DC-DC converters, motor control, and load-switching.
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
Features and benefits
Applications
N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8
N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8
N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8
MOSFET, N-CH, 40V, 120A, 175DEG C, 166W ROHS COMPLIANT: YES
MOSFET N-CH 40V 180A LFPAK56
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMN2R2-40YSDX | 1727-PSMN2R2-40YSDXTR-ND | 39AH0948 | PSMN2R2-40YSDX |
| Product Name | N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 120A, 175Deg C, 166W Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 40 volts | |||
| IDSS | 180000 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 166 milliwatts |
