Nexperia B.V. N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology PSMN2R2-40YSDX

Description
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Features and benefits 180 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 160 A Strong SOA (linear-mode) rating NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse Inrush management, hotswap
  • N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology - PSMN2R2-40YSDX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN2R2-40YSDXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R2-40YSDXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R2-40YSDXDKR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 40V, 120A, 175Deg C, 166W Rohs Compliant Nexperia - 39AH0948 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN2R2-40YSDX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote
Description
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Features and benefits 180 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 160 A Strong SOA (linear-mode) rating NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse Inrush management, hotswap
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C, designed for high-performance power switching applications. The device features a Schottky-Plus body-diode, low gate charge for high efficiency and low EMI, and is avalanche rated with 100% testing at 160 A. Maximum continuous drain current is 180 A at T<sub>mb</sub> = 25 °C, with a drain-source on-state resistance of 1.9 mΩ to 2.2 mΩ at 25 °C. The package supports wave soldering and has low parasitic inductance and resistance. Applications include synchronous rectification, DC-DC converters, motor control, and load-switching.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C, designed for high-performance power switching applications. The device features a Schottky-Plus body-diode, low gate charge for high efficiency and low EMI, and is avalanche rated with 100% testing at 160 A. Maximum continuous drain current is 180 A at T<sub>mb</sub> = 25 °C, with a drain-source on-state resistance of 1.9 mΩ to 2.2 mΩ at 25 °C. The package supports wave soldering and has low parasitic inductance and resistance. Applications include synchronous rectification, DC-DC converters, motor control, and load-switching.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology - PSMN2R2-40YSDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
PSMN2R2-40YSDX
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology PSMN2R2-40YSDX
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Features and benefits 180 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 160 A Strong SOA (linear-mode) rating NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse Inrush management, hotswap

180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Features and benefits

  • 180 A continuous ID(max) rating
  • Avalanche rated, 100% tested at IAS = 160 A
  • Strong SOA (linear-mode) rating
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
  • Low Qrr, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
  • Low parasitic inductance and resistance

Applications

  • High-performance synchronous rectification
  • DC-to-DC converters
  • Brushless DC motor control
  • Battery protection
  • Load-switch and eFuse
  • Inrush management, hotswap
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN2R2-40YSDXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R2-40YSDXTR-ND
Single FETs, MOSFETs 1727-PSMN2R2-40YSDXTR-ND
N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R2-40YSDXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R2-40YSDXCT-ND
Single FETs, MOSFETs 1727-PSMN2R2-40YSDXCT-ND
N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R2-40YSDXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R2-40YSDXDKR-ND
Single FETs, MOSFETs 1727-PSMN2R2-40YSDXDKR-ND
N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 180A (Ta) 166W (Ta) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Mosfet, N-Ch, 40V, 120A, 175Deg C, 166W Rohs Compliant Nexperia - 39AH0948 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 120A, 175Deg C, 166W Rohs Compliant Nexperia
39AH0948
Mosfet, N-Ch, 40V, 120A, 175Deg C, 166W Rohs Compliant Nexperia 39AH0948
MOSFET, N-CH, 40V, 120A, 175DEG C, 166W ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 120A, 175DEG C, 166W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN2R2-40YSDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN2R2-40YSDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN2R2-40YSDX
MOSFET N-CH 40V 180A LFPAK56

MOSFET N-CH 40V 180A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN2R2-40YSDX 1727-PSMN2R2-40YSDXTR-ND 39AH0948 PSMN2R2-40YSDX
Product Name N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Single FETs, MOSFETs Mosfet, N-Ch, 40V, 120A, 175Deg C, 166W Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 180000 milliamps
VGS(off) 20 volts
PD 166 milliwatts
Unlock Full Specs
to access all available technical data