Nexperia B.V. Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name Notes
BUK9MJJ-55PSS/A,51
BUK9MJT-55PRF,518
BUK9MPP-65PLL,518
BUK9MRR-65PKK,518
BUK9Y07-30B,115
BUK9Y11-30B,115
BUK9Y12-55B,115
BUK9Y12-80E,115
BUK9Y19-55B/C2,115
BUK9Y22-30B,115
BUK9Y30-75B/C2,115
GAN063-650WSAQ
NMBT3904R
NMBT3906,215
NMBT3906R
NX6020NBKS,115
NX7002AKAR
NX7002AKS/ZLX
NX7002BKW/S500X
ON5173,118
ON5173118
ON5233,118
ON5258,215
ON5278/C4127
OP540/BD/C3,027
PBHV8540X
PBHV9040X
PBHV9515QAZ
PBLS1501V,115
PBLS1501Y,115
PBLS1502Y,115
PBLS1504Y,115
PBLS2004D,115
PBLS2021D,115
PBLS2022D,115
PBLS2023D,115
PBLS2024D,115
PBLS4001D,115
PBLS4002D,115
PBLS4004D,115
PBLS6004D,115
PBLS6022D,115
PBSM5240PF,115
PBSM5240PFH,115
PBSS2515M,315
PBSS2515MB,315
PBSS2515VPN,115
PBSS2515VS,115
PBSS2515VS,315
PBSS2515YPN/ZLX
PBSS301ND,115
PBSS301NZ,135
PBSS301PD,115
PBSS301PD/SG,125
PBSS301PX,115
PBSS301PZ,135
PBSS304ND,115
PBSS305ND,115
PBSS305PD,115
PBSS3515M,315
PBSS3515MB,315
PBSS3515VS,115
PBSS4021SN,115
PBSS4021SP,115
PBSS4021SPN,115
PBSS4032ND,115
PBSS4032SN,115
PBSS4032SP,115
PBSS4032SPN,115
PBSS4041SN,115
PBSS4041SP,115
PBSS4041SPN,115
PBSS4140DPN/DG/B2,115
PBSS4160V,115
PBSS4240V,115
PBSS4240Y,115
PBSS4350SPN,115
PBSS4350SS,115
PBSS4350SSJ
N-channel 40 V, 4.3 mOhm logic level MOSFET in LFPAK33 -- BUK9M4R3-40HX
N-channel 40 V, 5.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M5R0-40HX
N-channel 40 V, 6.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M6R0-40HX
N-channel 40 V, 6.7 mOhm logic level MOSFET in LFPAK33 -- BUK9M6R7-40HX
N-channel 40 V, 8.5 mOhm logic level MOSFET in LFPAK33 -- BUK9M8R5-40HX
N-channel 40 V, 9.5 mOhm logic level MOSFET in LFPAK33 -- BUK9M9R5-40HX
Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive...
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R3-40HX
N-channel 40 V, 1.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R6-40HX
N-channel 40 V, 1.9 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R9-40HX
N-channel 40 V, 2.4 mΩ logic level MOSFET in LFPAK56 -- BUK9Y2R4-40HX
N-channel 40 V, 2.8 mΩ logic level MOSFET in LFPAK56 -- BUK9Y2R8-40HX
N-channel 40 V, 6.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y6R5-40HX
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101...
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET -- NX6020CAKSAX
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET -- NX6020CAKSX
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast...
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET -- NX1029X,115
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET -- NX1029XH
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very...
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET -- NX3008CBKV,115
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage...
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET -- NX3008CBKS,115
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
60 V, dual N-channel Trench MOSFET -- NX7002BKXBZ
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra...
30 V, 200 mA dual N-channel Trench MOSFET -- NX3020NAKV,115
30 V, 200 mA dual N-channel Trench MOSFET -- NX3020NAKVYL
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
60 V, dual N-channel Trench MOSFET -- NX7002BKSX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, dual N-channel Trench MOSFET -- NX138AKSF
60 V, dual N-channel Trench MOSFET -- NX138AKSX
60 V, dual N-channel Trench MOSFET -- NX138BKSF
60 V, dual N-channel Trench MOSFET -- NX138BKSX
60 V, dual N-channel Trench MOSFET -- NX6008NBKSX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
30 V, 350 mA dual N-channel Trench MOSFET -- NX3008NBKS,115
30 V, 350 mA dual N-channel Trench MOSFET -- NX3008NBKSH
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
30 V, 180 mA dual N-channel Trench MOSFET -- NX3020NAKS,115
60 V, dual N-channel Trench MOSFET -- NX7002AKS,115
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET...
30 V, 400 mA dual N-channel Trench MOSFET -- NX3008NBKV,115
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
30 V, 200 mA dual P-channel Trench MOSFET -- NX3008PBKS,115
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
30 V, 220 mA dual P-channel Trench MOSFET -- NX3008PBKV,115
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) -- BUK9V13-40HX
Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity PCB shrinkage through reduced component footprint for 3-phase motor drive Improved system level Rth(j-amb) due to...
N-channel TrenchMOS logic level FET -- BUK9Y14-40B,115
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
N-channel TrenchMOS logic level FET -- BUK9Y09-40B,115
N-channel TrenchMOS logic level FET -- BUK9Y104-100B,115
N-channel TrenchMOS logic level FET -- BUK9Y19-55B,115
N-channel TrenchMOS logic level FET -- BUK9Y19-75B,115
N-channel TrenchMOS logic level FET -- BUK9Y27-40B,115
N-channel TrenchMOS logic level FET -- BUK9Y30-75B,115
N-channel TrenchMOS logic level FET -- BUK9Y40-55B,115
N-channel TrenchMOS logic level FET -- BUK9Y58-75B,115
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in...
N-channel TrenchMOS logic level FET -- BUK9Y53-100B,115
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 -- BUK9M43-100EX
N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33 -- BUK9M5R2-30EX
N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 -- BUK9M6R6-30EX
N-channel 40 V, 52 mΩ logic level MOSFET in LFPAK33 -- BUK9M52-40EX
N-channel 40 V, 7.2 mΩ logic level MOSFET in LFPAK33 -- BUK9M7R2-40EX
N-channel 40 V, 9.1 mΩ logic level MOSFET in LFPAK33 -- BUK9M9R1-40EX
N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33 -- BUK9M53-60EX
N-channel 60 V, 85 mΩ logic level MOSFET in LFPAK33 -- BUK9M85-60EX
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 -- BUK9Y113-100E,115
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 -- BUK9Y12-100E,115
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-100E,115
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 -- BUK9Y153-100E,115
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 -- BUK9Y19-100E,115
N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56 -- BUK9Y22-100E,115
N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56 -- BUK9Y38-100E,115
N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 -- BUK9Y65-100E,115
N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56 -- BUK9Y21-40E,115
N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 -- BUK9Y29-40E,115
N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56 -- BUK9Y4R4-40E,115
N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-60E,115
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-60E,115
N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 -- BUK9Y4R8-60E,115
N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 -- BUK9Y43-60E,115
N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 -- BUK9Y59-60E,115
N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R2-60E,115
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R7-60E,115
N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 -- BUK9Y107-80EX
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 -- BUK9Y11-80EX
N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-80E,115
N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 -- BUK9Y41-80E,115
N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 -- BUK9Y72-80E,115
N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R5-80EX
N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y14-80E,115
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive...
N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 -- BUK9Y12-40E,115
N-channel 40 V, 3.8 mOhm logic level MOSFET in LFPAK56 -- BUK9Y3R5-40E,115
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R6-40E,115
N-channel 60 V, 6.0 mOhm logic level MOSFET in LFPAK56 -- BUK9Y6R0-60E,115
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 -- BUK9Y3R0-40E,115
Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features...
15 V PNP BISS loadswitch -- PBLS1503Y,115
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Features and benefits Low VCEsat (BISS) and resistor-equipped transistor in one package Low 'threshold' voltage (< 1...
40 V, 0.5 A PNP low VCEsat (BISS) transistor -- PBSS3540M,315
Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2540M. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability I...
30 V; 2 A NPN low VCEsat transistor -- PBSS4230T,215
Low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5230T Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability I...
60 V, N-channel Trench MOSFET -- NX7002BKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
50 V, N-channel Trench MOSFET -- NX5008NBKHH
60 V, N-channel Trench MOSFET -- NX138BKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
60 V, N-channel Trench MOSFET -- NX7002BKMYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
50 V, N-channel Trench MOSFET -- NX5008NBKMYL
60 V, N-channel Trench MOSFET -- NX138BKMYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
60 V, N-channel Trench MOSFET -- NX7002BKMBYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, N-channel Trench MOSFET -- NX138AKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, N-channel Trench MOSFET -- NX138AKMYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, N-channel Trench MOSFET -- NX7002BKR
60 V, N-channel Trench MOSFET -- NX7002BKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
60 V, N-channel Trench MOSFET -- NX138AKR
60 V, N-channel Trench MOSFET -- NX138AKVL
60 V, single N-channel Trench MOSFET -- NX138BKR
60 V, single N-channel Trench MOSFET -- NX138BKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench...
30 V, 400 mA N-channel Trench MOSFET -- NX3008NBK,215
30 V, 400 mA N-channel Trench MOSFET -- NX3008NBKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
30 V, single N-channel Trench MOSFET -- NX3020NAK,215
60 V, single N-channel Trench MOSFET -- NX7002AK,215
60 V, single N-channel Trench MOSFET -- NX7002AKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
20 V, N-channel Trench MOSFET -- NXV40UNR
30 V, N-channel Trench MOSFET -- NXV55UNR
60 V, N-channel Trench MOSFET -- NX6008NBKR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET...
30 V, 180 mA N-channel Trench MOSFET -- NX3020NAKW,115
60 V, single N-channel Trench MOSFET -- NX7002AKW,115
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
60 V, single N-channel Trench MOSFET -- NX7002BKWX
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench...
60 V, N-channel Trench MOSFET -- NX138BKWF
60 V, N-channel Trench MOSFET -- NX138BKWX
60 V, N-channel Trench MOSFET -- NX6008NBKWX
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
30 V, 350 mA N-channel Trench MOSFET -- NX3008NBKW,115
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage...
50 V, 150 mA NPN general-purpose transistors -- NXP3875GR
50 V, 150 mA NPN general-purpose transistors -- NXP3875YR
50 V, 150 mA NPN general-purpose transistors -- NXP3875YVL
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors Small SMD plastic package Two different current gain selections AEC-Q101 qualified Applications...
45 V, 4 A NPN high power bipolar transistor -- MJD148-QJ
45 V, 4 A NPN high power bipolar transistor -- MJD148J
50 V, 2 A NPN high power bipolar transistor -- MJD2873-QJ
50 V, 2 A NPN high power bipolar transistor -- MJD2873J
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less...
100 V, 3 A NPN high power bipolar transistor -- MJD31CJ
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A NPN high power bipolar transistor -- MJD31CAJ
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A NPN high power bipolar transistor -- MJD41C-QJ
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C-Q Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A NPN high power bipolar transistor -- MJD41CJ
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A NPN high power bipolar transistor -- MJD44H11J
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A NPN high power bipolar transistor -- MJD44H11AJ
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A Features and benefits High thermal power dissipation capability High energy efficiency...
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor -- PBHV8550XF
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115Z,115
NPN high-voltage low VCEsat in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 500 mA NPN high-voltage low VCEsat transistor -- PBHV8515QAZ
NPN high-voltage low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits High voltage Low...
150 V, 2 A NPN high-voltage low VCEsat transistor -- PBHV8215Z,115
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9215Z Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8140Z,115
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z Features and benefits High voltage Low collector-emitter saturation voltage V...
180 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8118T,215
NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115TLHR
NPN high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115TLH Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
600 V, 0.1 A NPN high-voltage low VCEsat transistor -- PBHV2160ZX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z Features and benefits Low collector-emitter saturation voltage VCEsat High...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540Z,115
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z Features and benefits High voltage Low collector-emitter saturation voltage V...
600 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8560ZX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z Features and benefits Low collector-emitter saturation voltage VCEsat High...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540T,215
NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540X,115
NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X Features and benefits High voltage Low collector-emitter...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115X,115
NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X Features and benefits High voltage Low collector-emitter...
NPN high-voltage transistor -- MMBTA42,215
NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBTA92 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony...
60 V, 1 A NPN low VCEsat BISS transistor -- PBSS4160XF
60 V, 1 A NPN low VCEsat BISS transistor -- PBSS4160XX
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage...
30 V, 2 A NPN low VCEsat transistor -- PBSS4230QAZ
60 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS4160QAZ
60 V, 2 A NPN low VCEsat transistor -- PBSS4260QAZ
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement:...
40 V; 2 A NPN low VCEsat transistor -- PBSS4240ZF
40 V; 2 A NPN low VCEsat transistor -- PBSS4240ZX
60 V, 3 A NPN low VCEsat transistor -- PBSS4360ZX
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z Features and benefits Low collector-emitter saturation...
30 V, 3 A NPN low VCEsat (BISS) transistor -- PBSS4330PA,115
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA.
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ -- PBRN113ET,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRN113ZT-QR
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT-Q Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRN113ZT,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PBRN123ET,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123ET Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ -- PBRN123YT,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT Features and benefits 600 mA output current capability...
30 V, 3 A NPN low VCEsat transistor -- PBSS4330PASX
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP...
20 V, 7 A NPN low VCEsat transistor -- PBSS4021NX,115
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX Features and benefits Very low collector-emitter saturation voltage...
30 V, 4.7 A NPN low VCEsat transistor -- PBSS4032NX,115
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX Features and benefits Very low collector-emitter saturation voltage...
60 V, 6.2 A NPN low VCEsat transistor -- PBSS4041NX,115
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX Features and benefits Very low collector-emitter saturation voltage...
20 V, 3 A NPN low VCEsat (BISS) transistor -- PBSS4320X,135
NPN low VCEsat transistor in a medium power flat lead SOT89 plastic package. PNP complement: PBSS5320X Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High...
50 V low VCEsat NPN transistor -- PBSS4350Z,135
50 V low VCEsat NPN transistor -- PBSS4350Z/ZLF
NPN low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350Z Features and benefits Low collector-emitter saturation voltage High collector current capability:...
40 V; 2 A NPN low VCEsat transistor -- PBSS4240T,215
40 V; 2 A NPN low VCEsat transistor -- PBSS4240TVL
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T Features and benefits Low collector-emitter saturation voltage High current capability Improved device...
50 V; 3 A NPN low VCEsat transistor -- PBSS4350T-QR
50 V; 3 A NPN low VCEsat transistor -- PBSS4350T-QVL
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T-Q Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low...
50 V; 3 A NPN low VCEsat transistor -- PBSS4350T,215
50 V; 3 A NPN low VCEsat transistor -- PBSS4350TVL
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low...
60 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS4160T,215
60 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS4160TVL
NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and...
40 V, 1 A NPN low VCEsat transistor -- PBSS4140T,215
40 V, 1 A NPN low VCEsat transistor -- PBSS4140T,235
NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T Features and benefits Low collector-emitter saturation voltage High current capabilities Improved device reliability...
20 V, 4 A NPN low VCEsat transistor -- PBSS4420D,115
NPN low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5420D Features and benefits Very low collector-emitter saturation resistance Ultra low collector-emitter saturation...
20 V, 8 A NPN low VCEsat transistor -- PBSS4021NZ,115
NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ Features and benefits Very low collector-emitter saturation voltage VCEsat High...
60 V, 7 A NPN low VCEsat transistor -- PBSS4041NZ-QX
NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High...
60 V, 7 A NPN low VCEsat transistor -- PBSS4041NZ,115
NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ Features and benefits Very low collector-emitter saturation voltage VCEsat High...
20 V, 5.8 A NPN low VCEsat transistor -- PBSS302NZ,135
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
30 V, 5.5 A NPN low VCEsat transistor -- PBSS303NZ,135
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
60 V, 5.2 A NPN low VCEsat transistor -- PBSS304NZ,135
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
80 V, 5.1 A NPN low VCEsat transistor -- PBSS305NZ,135
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
100 V, 5.1 A NPN low VCEsat transistor -- PBSS306NZ,135
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
20 V, 4.3 A NPN low VCEsat transistor -- PBSS4021NT,215
NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PT Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current...
30 V, 2.6 A NPN low VCEsat transistor -- PBSS4032NT,215
NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High...
60 V, 3.8 A NPN low VCEsat transistor -- PBSS4041NT,215
NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current...
20 V NPN low VCEsat transistor -- PBSS4320T,215
20 V NPN low VCEsat transistor -- PBSS4320TVL
NPN low VCEsat transistor in a SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5320T-Q Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat...
40V Low VCEsat NPN Transistor -- PBSS4140U,115
40V Low VCEsat NPN Transistor -- PBSS4140U,135
NPN low VCEsat transistor in a SOT323 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140U Features and benefits Low collector-emitter saturation voltage High current capabilities Improved device reliability due...
50 V low VCEsat NPN transistor -- PBSS4350D-QF
50 V low VCEsat NPN transistor -- PBSS4350D-QX
NPN low VCEsat transistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D-Q Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced...
50 V low VCEsat NPN transistor -- PBSS4350D,115
50 V low VCEsat NPN transistor -- PBSS4350D,125
50 V low VCEsat NPN transistor -- PBSS4350D,135
NPN low VCEsat transistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced...
40 V, 4 A NPN low VCEsat transistor -- PBSS302ND,115
40 V, 4 A NPN low VCEsat transistor -- PBSS302NDH
NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A...
60 V, 3 A NPN low VCEsat transistor -- PBSS303ND,115
NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
40 V, 0.5 A NPN low VCEsat transistor -- PBSS2540M,315
NPN low VCEsat transistor in a SOT883 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540M Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
50 V, 2 A NPN low VCEsat transistor -- PBSS4250X,115
50 V, 2 A NPN low VCEsat transistor -- PBSS4250X,135
NPN low VCEsat transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5250X Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
20 V, 5.3 A NPN low VCEsat transistor -- PBSS302NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX Features and benefits Low collector-emitter saturation voltage VCEsat...
30 V, 5.1 A NPN low VCEsat transistor -- PBSS303NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. Features and benefits Low collector-emitter saturation voltage VCEsat...
60 V, 4.7 A NPN low VCEsat transistor -- PBSS304NX,115
60 V, 4.7 A NPN low VCEsat transistor -- PBSS304NXZ
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX Features and benefits Low collector-emitter saturation voltage VCEsat...
80 V, 4.6 A NPN low VCEsat transistor -- PBSS305NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PX Features and benefits Low collector-emitter saturation voltage VCEsat...
100 V, 4.5 A NPN low VCEsat transistor -- PBSS306NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX Features and benefits Low collector-emitter saturation voltage VCEsat...
30 V, 3 A NPN low VCEsat transistor -- PBSS4330X,115
30 V, 3 A NPN low VCEsat transistor -- PBSS4330X,135
NPN low VCEsat transistor in a SOT89 plastic package. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and I...
40 V, 2 A NPN low VCEsat transistor -- PBSS4240XF
40 V, 2 A NPN low VCEsat transistor -- PBSS4240XX
NPN low VCEsat transistor in a SOT89 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
50 V, 3 A NPN low VCEsat transistor -- PBSS4350X,115
50 V, 3 A NPN low VCEsat transistor -- PBSS4350X,135
50 V, 3 A NPN low VCEsat transistor -- PBSS4350X,146
50 V, 3 A NPN low VCEsat transistor -- PBSS4350X,147
NPN low VCEsat transistor in a SOT89 Surface-Mounted Devices (SMD) plastic package. PNP complement: PBSS5350X Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector...
60 V, 3 A NPN low VCEsat transistor -- PBSS4360PASX
NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP...
60 V, 3 A NPN low VCEsat transistor -- PBSS4360XF
60 V, 3 A NPN low VCEsat transistor -- PBSS4360XX
NPN low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360X Features and benefits Low collector-emitter saturation voltage VCEsat...
40 V, 0.5 A NPN low VCEsat transistor -- PBSS2540MB,315
NPN low VCEsattransistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. Features and benefits Low collector-emitter saturation voltage VCEsat High...
30 V, 4.9 A NPN low VCEsat transistor -- PBSS4032NZ,115
NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching...
60 V, 1 A NPN low VCEsat transistor -- PBSS4160U,115
NPN low VCEsattransistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160U Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114ETR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114ETVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YTR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YTVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JTR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JTVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124ETR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124ETVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZTR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZTVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144ETR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144ETVL
NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit...
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114EUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114EUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124EUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124EUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144EUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144EUX
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies...
40 V, 200 mA NPN switching transistor -- MMBT3904,215
40 V, 200 mA NPN switching transistor -- MMBT3904VL
NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBT3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO...
NPN switching transistor -- MMBT2222A,215
NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching and linear...
20 V; 1 A NPN low VCEsat transistor -- PBSS4120T,215
NPN transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5120T Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
30 V; 1 A NPN low VCEsat transistor -- PBSS4130T,215
NPN transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor -- PBSS4112PAN,115
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP. Features and...
30 V, 1 A NPN/NPN low VCEsat transistor -- PBSS4130PAN,115
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP. Features and...
60 V, 1 A NPN/NPN low VCEsat transistor -- PBSS4160PAN,115
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP. Features and...
30 V, 2 A NPN/NPN low VCEsat transistor -- PBSS4230PAN,115
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. Features and...
60 V, 2 A NPN/NPN low VCEsat transistor -- PBSS4260PAN,115
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP. Features and...
60 V, 1 A NPN/NPN low VCEsat transistor -- PBSS4160PANSX
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement:...
20 V, 2 A NPN/NPN low VCEsat double transistor -- PBSS4220PANSX
NPN/NPN low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement: PBSS5220PAPS Features and benefits...
60 V, 2 A NPN/NPN low VCEsat double transistor -- PBSS4260PANSX
NPN/NPN low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP/PNP complement: PBSS5260PAPS Features and benefits...
60 V, 1 A NPN/NPN low VCEsat transistor -- PBSS4160DS,115
60 V, 1 A NPN/NPN low VCEsat transistor -- PBSS4160DSH
60 V, 1 A NPN/NPN low VCEsat transistor -- PBSS4160DSZ
NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH11F
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH11X
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH1F
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH1X
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH2F
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH2X
NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors...
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH10F
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH10X
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH13F
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH13X
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH9F
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH9X
NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors...
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AF
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AH
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AX
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AZ
NPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistor High current Reduces component count on Printed-Circuit Board (PCB) Reduces pick and...
30 V, 1 A NPN/PNP low VCEsat transistor -- PBSS4130PANP,115
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. Features and...
60 V, 2 A NPN/PNP low VCEsat transistor -- PBSS4260PANP,115
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP. Features and...
60 V, 2 A NPN/PNP low VCEsat double transistor -- PBSS4260PANPSX
NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS...
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor -- PBSS4112PANP,115
NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN PNP/PNP complement: PBSS5112PAP Features and benefits Very low collector-emitter saturation...
60 V, 1 A NPN/PNP low VCEsat transistor -- PBSS4160PANP,115
NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN PNP/PNP complement: PBSS5160PAP Features and benefits Very low collector-emitter saturation...
15 V low VCEsat NPN/PNP transistor -- PBSS2515YPN,115
NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . Features and benefits Low collector-emitter saturation voltage High current capability Replaces two...
40 V low VCEsat NPN/PNP transistor -- PBSS4240DPN,115
NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM...
60 V, 1 A NPN/PNP low VCEsat transistor -- PBSS4160DPN,115
NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: I...
40 V low VCEsat NPN/PNP transistor -- PBSS4140DPN,115
40 V low VCEsat NPN/PNP transistor -- PBSS4140DPN-QX
40 V low VCEsat NPN/PNP transistor -- PBSS4140DPNF
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. Features and benefits 600 mW total power dissipation Low collector-emitter saturation voltage High current capability Improved device reliability...
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD12F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD12X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD2F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD2X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD3F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD3X
NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors...
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD10F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD10X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD13F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD13X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD9F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD9X
NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors...
30 V, P-channel Trench MOSFET -- NX3008NBKMB,315
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, 2 A P-channel Trench MOSFET -- NX2301P,215
20 V, 2 A P-channel Trench MOSFET -- NX2301PVL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low...
30 V, 230 mA P-channel Trench MOSFET -- NX3008PBK,215
30 V, 230 mA P-channel Trench MOSFET -- NX3008PBKVL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
30 V, P-channel Trench MOSFET -- NXV90EPR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology...
20 V, P-channel Trench MOSFET -- NXV65UPR
20 V, P-channel Trench MOSFET -- NXV75UPR
30 V, P-channel Trench MOSFET -- NXV100XPR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET...
30 V, 200 mA P-channel Trench MOSFET -- NX3008PBKW,115
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
100 V, 3 A PNP high power bipolar transistor -- MJD32CJ
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A PNP high power bipolar transistor -- MJD32CAJ
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A PNP high power bipolar transistor -- MJD42C-QJ
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C-Q Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A PNP high power bipolar transistor -- MJD42CJ
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A PNP high power bipolar transistor -- MJD45H11J
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A PNP high power bipolar transistor -- MJD45H11AJ
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A Features and benefits High thermal power dissipation capability High energy efficiency...
140 V, 4 A PNP high-voltage low VCEsat transistor -- PBHV9414ZX
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation...
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050Z,115
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050Z/ZLX
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050ZF
600 V, 0.1 A PNP high-voltage low VCEsat transistor -- PBHV3160ZX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector...
500 V, 0.5 A PNP high-voltage low VCEsat transistor -- PBHV9540Z,115
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8140Z Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 2 A PNP high-voltage low VCEsat transistor -- PBHV9215Z,115
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z Features and benefits High voltage Low collector-emitter saturation voltage V...
600 V, 0.5 A PNP high-voltage low VCEsat transistor -- PBHV9560ZX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z Features and benefits High voltage Low collector-emitter saturation voltage V...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115TLHR
PNP high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115Z,115
PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115Z Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040Z,115
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040Z/ZLX
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040ZF
PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040T,215
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040TVL
PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115T-QR
PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T-Q. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115T,215
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115TVL
PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 150 mA PNP high-voltage low VCEsat transistor -- PBHV9050T,215
PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540XF
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540XX
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040X,115
PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115X,115
PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) small and flat Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
PNP high-voltage transistor -- MMBTA92,215
PNP high-voltage transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: MMBTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) AEC-Q101 qualified...
20 V PNP BISS loadswitch -- PBLS2001D,115
20 V PNP BISS loadswitch -- PBLS2002D,115
20 V PNP BISS loadswitch -- PBLS2003D,115
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits...
60 V, 1.5 A PNP BISS loadswitch -- PBLS6021D,115
60 V, 1.5 A PNP BISS loadswitch -- PBLS6023D,115
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low...
40 V PNP BISS loadswitch -- PBLS4001Y,115
40 V PNP BISS loadswitch -- PBLS4004Y,115
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package. Features and benefits Low VCEsat (BISS) and resistor-equipped transistor in...
60 V PNP BISS loadswitch -- PBLS6001D,115
60 V PNP BISS loadswitch -- PBLS6005D,115
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits Low...
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ -- PBRP113ET,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRP113ZT,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PBRP123ET,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ -- PBRP123YT,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT Features and benefits 600 mA output current capability...
40 V PNP loadswitch -- PBLS4005D,115
60 V, 1.5 A PNP loadswitch -- PBLS6024D,115
PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor...
40 V 500 mA PNP/NPN loadswitch double transistor -- PBLS4003Y,115
40 V 500 mA PNP/NPN loadswitch double transistor -- PBLS4005Y,115
PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped...
60 V, 1 A PNP/NPN loadswitch double transistor -- PBLS6002D,115
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits Low VCEsat (BISS) transistor and...
60 V, 1 A PNP loadswitch double transistor -- PBLS6003D,115
60 V, 1 A PNP/NPN loadswitch double transistor -- PBLS6002D-QX
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits Low VCEsat transistor and resistor-equipped...
40 V PNP loadswitch transistor -- PBLS4003D,115
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor in...
40 V, 500 mA PNP loadswitch transistor -- PBLS4002Y,115
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat transistor and resistor-equipped...
20 V, 6.2 A PNP low VCEsat transistor -- PBSS4021PX,115
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX Features and benefits Very low collector-emitter saturation voltage...
30 V, 4.2 A PNP low VCEsat transistor -- PBSS4032PX,115
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX Features and benefits Very low collector-emitter saturation voltage...
60 V, 5 A PNP low VCEsat transistor -- PBSS4041PX,115
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NX Features and benefits Very low collector-emitter saturation voltage...
30 V, 4.4 A PNP low VCEsat transistor -- PBSS4032PZ,115
PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching...
20 V, 6.6 A PNP low VCEsat transistor -- PBSS4021PZ,115
PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ Features and benefits Very low collector-emitter saturation voltage VCEsat High...
60 V, 5.7 A PNP low VCEsat transistor -- PBSS4041PZ,115
PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ Features and benefits Very low collector-emitter saturation voltage VCEsat High...
20 V, 5.5 A PNP low VCEsat transistor -- PBSS302PZ,135
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
30 V, 5.3 A PNP low VCEsat transistor -- PBSS303PZ,135
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
80 V, 4.5 A PNP low VCEsat transistor -- PBSS305PZ,135
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
100 V, 4.1 A PNP low VCEsat transistor -- PBSS306PZ,135
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
20 V, 3.5 A PNP low VCEsat transistor -- PBSS4021PT,215
PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NT Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current...
30 V, 2.4 A PNP low VCEsat transistor -- PBSS4032PT,215
PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High...
60 V, 2.7 A PNP low VCEsat transistor -- PBSS4041PT,215
PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NT Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current...
40 V, 4 A PNP low VCEsat transistor -- PBSS302PD,115
40 V, 4 A PNP low VCEsat transistor -- PBSS302PDH
PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A...
60 V, 3 A PNP low VCEsat transistor -- PBSS303PD,115
PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303ND Features and benefits Low collector-emitter saturation voltage VCEsat High collector current...
20 V, 5.1 A PNP low VCEsat transistor -- PBSS302PX,115
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX Features and benefits Low collector-emitter saturation voltage VCEsat High...
30 V, 5.1 A PNP low VCEsat transistor -- PBSS303PX,115
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NX Features and benefits Low collector-emitter saturation voltage VCEsat High...
60 V, 4.2 A PNP low V<sub>CEsat</sub> transistor -- PBSS304PX,115
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304NX Features and benefits Low collector-emitter saturation voltage VCEsat...
100 V, 3.7 A PNP low VCEsat transistor -- PBSS306PX,115
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NX Features and benefits Low collector-emitter saturation voltage VCEsat...
80 V, 4.0 A PNP low VCEsat transistor -- PBSS305PX,115
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NX Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114ETR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114ETVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YTR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YTVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JTR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JTVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124ETR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124ETVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZTR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZTVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144ETR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144ETVL
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit...
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114EUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114EUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124EUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124EUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144EUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144EUX
PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies...
40 V, 200 mA PNP switching transistor -- MMBT3906,215
40 V, 200 mA PNP switching transistor -- MMBT3906VL
PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904 Features and benefits Collector current capability IC = -200 mA Collector-emitter voltage VCEO...
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB10F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB10X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB11F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB11X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB13F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB13X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB1X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB2F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB2X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB9F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB9X
PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors...
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package -- GAN041-650WSBQ
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology...

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