Nexperia B.V. N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology PSMN5R0-40MLHX

Description
85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits Avalanche rated, 100% tested NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies Low spiking and ringing for low EMI designs High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Secondary side synchronous rectification DC-to-DC converters Brushless DC motor drive LED lighting
  • N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology - PSMN5R0-40MLHX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN5R0-40MLHXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN5R0-40MLHXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN5R0-40MLHXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PSMN5R0-40MLHX - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N Ch, 40V, 85A, Lfpak33 Rohs Compliant Nexperia - 76AH5990 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN5R0-40MLHX - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits Avalanche rated, 100% tested NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies Low spiking and ringing for low EMI designs High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Secondary side synchronous rectification DC-to-DC converters Brushless DC motor drive LED lighting
Request a Quote
Datasheet
Datasheet Summary
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N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 package using NextPower-S3 technology, rated for 175 °C junction temperature. The device features avalanche ruggedness with 100% testing, low gate charge for high efficiency at high switching frequencies, and low parasitic inductance. Package is SOT1210 with exposed leads for wave soldering and thermal performance. Supported applications include DC-to-DC conversion, synchronous rectification, brushless DC motor drives, and LED lighting. Rated for 85 A continuous drain current and 83 W power dissipation at 25 °C mounting base temperature. Drain-source on-state resistance is 3.9 mΩ at V_GS = 10 V and T_j = 25 °C. Gate-source threshold voltage ranges from 1.45 V to 2.15 V. Complies with IEC 60134 absolute maximum ratings. Avalanche energy capability up to 127.6 mJ.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 package using NextPower-S3 technology, rated for 175 °C junction temperature. The device features avalanche ruggedness with 100% testing, low gate charge for high efficiency at high switching frequencies, and low parasitic inductance. Package is SOT1210 with exposed leads for wave soldering and thermal performance. Supported applications include DC-to-DC conversion, synchronous rectification, brushless DC motor drives, and LED lighting. Rated for 85 A continuous drain current and 83 W power dissipation at 25 °C mounting base temperature. Drain-source on-state resistance is 3.9 mΩ at V_GS = 10 V and T_j = 25 °C. Gate-source threshold voltage ranges from 1.45 V to 2.15 V. Complies with IEC 60134 absolute maximum ratings. Avalanche energy capability up to 127.6 mJ.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology - PSMN5R0-40MLHX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
PSMN5R0-40MLHX
N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology PSMN5R0-40MLHX
85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits Avalanche rated, 100% tested NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies Low spiking and ringing for low EMI designs High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Secondary side synchronous rectification DC-to-DC converters Brushless DC motor drive LED lighting

85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.

Features and benefits

  • Avalanche rated, 100% tested
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
  • Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies
  • Low spiking and ringing for low EMI designs
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
  • Low parasitic inductance and resistance

Applications

  • Secondary side synchronous rectification
  • DC-to-DC converters
  • Brushless DC motor drive
  • LED lighting
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN5R0-40MLHXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN5R0-40MLHXCT-ND
Single FETs, MOSFETs 1727-PSMN5R0-40MLHXCT-ND
N-Channel 40V 85A (Ta) 83W (Ta) Surface Mount LFPAK33

N-Channel 40V 85A (Ta) 83W (Ta) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN5R0-40MLHXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN5R0-40MLHXDKR-ND
Single FETs, MOSFETs 1727-PSMN5R0-40MLHXDKR-ND
N-Channel 40V 85A (Ta) 83W (Ta) Surface Mount LFPAK33

N-Channel 40V 85A (Ta) 83W (Ta) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN5R0-40MLHXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN5R0-40MLHXTR-ND
Single FETs, MOSFETs 1727-PSMN5R0-40MLHXTR-ND
N-Channel 40V 85A (Ta) 83W (Ta) Surface Mount LFPAK33

N-Channel 40V 85A (Ta) 83W (Ta) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - PSMN5R0-40MLHX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN5R0-40MLHX
Single FETs, MOSFETs PSMN5R0-40MLHX
MOSFET N-CH 40V 85A LFPAK33

MOSFET N-CH 40V 85A LFPAK33

Supplier's Site Datasheet
Mosfet, N Ch, 40V, 85A, Lfpak33 Rohs Compliant Nexperia - 76AH5990 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 40V, 85A, Lfpak33 Rohs Compliant Nexperia
76AH5990
Mosfet, N Ch, 40V, 85A, Lfpak33 Rohs Compliant Nexperia 76AH5990
MOSFET, N CH, 40V, 85A, LFPAK33 ROHS COMPLIANT: YES

MOSFET, N CH, 40V, 85A, LFPAK33 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN5R0-40MLHX - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN5R0-40MLHX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN5R0-40MLHX
MOSFET N-CH 40V 85A LFPAK33

MOSFET N-CH 40V 85A LFPAK33

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN5R0-40MLHX 1727-PSMN5R0-40MLHXCT-ND PSMN5R0-40MLHX 76AH5990 PSMN5R0-40MLHX
Product Name N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Ch, 40V, 85A, Lfpak33 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts 40 volts
IDSS 85000 milliamps 85000 milliamps
VGS(off) 20 volts
PD 83 milliwatts 83000 milliwatts
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