PSMN6R9-100YSF - NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package SOIC 4-Pin Product overview: PSMN6R9-100YSFX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN6R9-100YSFX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1086144-PSMN6R9-100Y
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 238W
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 50.3 nC @ 10 V
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: PSMN6R9
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 100V 100A (Tc) 238W Surface Mount LFPAK56, Power-SO8
MOSFET N-CH 100V 100A LFPAK56
MOSFET PSMN6R9-100YSF SOT669/LFPAK
MOSFET N-CH 100V 100A LFPAK56
MOSFET, N-CH, 100V, 90A, SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-PSMN6R9-100YSFX | 1086144-PSMN6R9-100YSFX | 1727-PSMN6R9-100YSFXTR-ND | PSMN6R9-100YSFX | PSMN6R9-100YSFX | PSMN6R9-100YSFX | 61AC8118 |
| Product Name | N-Channel 100 V SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 90A, Sot-669; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 238000 milliwatts | 238000 milliwatts | |||||
| TJ | 175 C (347 F) | 175 C (347 F) | |||||
| Package Type | SOT3 | SC-100, SOT-669 | SC-100, SOT-669 | Surface Mount | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
