Nexperia B.V. N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 PSMN5R6-60YLX

Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package Applications Synchronous rectifier in LLC topology Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
Request a Quote Datasheet
Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package Applications Synchronous rectifier in LLC topology Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 - PSMN5R6-60YLX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56
PSMN5R6-60YLX
N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 PSMN5R6-60YLX
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package Applications Synchronous rectifier in LLC topology Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.

Features and benefits

  • Advanced TrenchMOS provides low RDSon and low gate charge
  • Logic level gate operation
  • Avalanche rated, 100% tested
  • LFPAK provides maximum power density in a Power SO8 package

Applications

  • Synchronous rectifier in LLC topology
  • Chargers & adaptors with Vout < 10 V
  • Fast charge & USB-PD applications
  • Battery powered motor control
  • LED lighting & TV backlight
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2596-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2596-1-ND
Single FETs, MOSFETs 1727-2596-1-ND
N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2596-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2596-6-ND
Single FETs, MOSFETs 1727-2596-6-ND
N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2596-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2596-2-ND
Single FETs, MOSFETs 1727-2596-2-ND
N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN5R6-60YLX - 792634-PSMN5R6-60YLX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN5R6-60YLX
792634-PSMN5R6-60YLX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN5R6-60YLX 792634-PSMN5R6-60YLX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 792634-PSMN5R6-60YLX Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SC-100, SOT-669 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Family Name: PSMN5R6-60YL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Manufacturer Package: LFPAK56, Power-SO8 Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 66.8nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5026pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 167W (Tc) Rds On (Maximum) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): PSMN5R6-60YL; ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 792634-PSMN5R6-60YLX
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SC-100, SOT-669
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: PSMN5R6-60YL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Manufacturer Package: LFPAK56, Power-SO8
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 66.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5026pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 167W (Tc)
Rds On (Maximum) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): PSMN5R6-60YL;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
N-Channel 60 V SOIC MOSFET Transistor
278-PSMN5R6-60YLX
N-Channel 60 V SOIC MOSFET Transistor 278-PSMN5R6-60YLX
PSMN5R6-60YL - N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: PSMN5R6-60YLX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN5R6-60YLX can be used for catalog matching and distributor lookup.

PSMN5R6-60YL - N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: PSMN5R6-60YLX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN5R6-60YLX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PSMN5R6-60YL/LFPAK/R EEL 7" Q1/

MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/

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Mosfet, N-Ch, 60V, 100A, Sot-669-4; Transistor Polarity Nexperia - 96Y9588 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 100A, Sot-669-4; Transistor Polarity Nexperia
96Y9588
Mosfet, N-Ch, 60V, 100A, Sot-669-4; Transistor Polarity Nexperia 96Y9588
MOSFET, N-CH, 60V, 100A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 100A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - PSMN5R6-60YLX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN5R6-60YLX
Single FETs, MOSFETs PSMN5R6-60YLX
MOSFET N-CH 60V 100A LFPAK56

MOSFET N-CH 60V 100A LFPAK56

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN5R6-60YLX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN5R6-60YLX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN5R6-60YLX
MOSFET N-CH 60V 100A LFPAK56

MOSFET N-CH 60V 100A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN5R6-60YLX 1727-2596-1-ND 792634-PSMN5R6-60YLX 278-PSMN5R6-60YLX PSMN5R6-60YLX 96Y9588 PSMN5R6-60YLX PSMN5R6-60YLX
Product Name N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN5R6-60YLX N-Channel 60 V SOIC MOSFET Transistor MOSFET Mosfet, N-Ch, 60V, 100A, Sot-669-4; Transistor Polarity Nexperia Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 100000 milliamps 100000 milliamps 100000 milliamps
VGS(off) 20 volts
PD 167 milliwatts 167000 milliwatts 167000 milliwatts
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