N-channel TrenchMOS SiliconMAX standard level FET in an LFPAK (SOT669) surface-mounted package, rated for a drain-source voltage of 200 V and a continuous drain current of 21.5 A at 25°C, with a typical on-state resistance of 86 mΩ at 12 A and 25°C. The device supports total power dissipation up to 113 W and features fast switching for high-frequency applications such as Class D amplifiers, DC-to-DC converters, motion control, and switched-mode power supplies. Thermal resistance from junction to mounting base is 1.1 K/W. The package includes a drain-connected mounting base for improved heat dissipation.
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
N-Ch TrenchMOS FET, 200V, SOIC-4 Product overview: PSMN102-200Y,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN102-200Y,115
N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930914-PSMN102-200Y,
Series: TrenchMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 200 V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
Package: SC-100, SOT-669
Package: Reel - TR
Mounting: Surface Mount
Family Name: PSMN102
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-5227-6, 568-6544-2-ND, 568-6544-1-ND, 1727-5227-2, PSMN102-200Y T/R-ND, 1727-5227-1, PSMN102200Y115, 568-6544-6-ND, PSMN102-200Y,115-ND,
MOSFET N-CH 200V 21.5A LFPAK56
MOSFET, N-CH, 200V, 21.5A, LFPAK56 ROHS COMPLIANT: YES
MOSFET N-CH 200V 21.5A LFPAK56
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMN102-200Y,115 | 278-PSMN102-200Y,115 | 1727-5227-6-ND | 930914-PSMN102-200Y,115 | PSMN102-200Y,115 | 74AH1193 | PSMN102-200Y,115 |
| Product Name | N-channel TrenchMOS SiliconMAX standard level FET | 200V SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN102-200Y,115 | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 21.5A, Lfpak56 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT669 SOT669 | SC-100, SOT-669 | SOT3; LFPAK56, Power-SO8 | SC-100, SOT-669 | TO-3 | SC-100, SOT-669 | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
