Nexperia B.V. N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 PSMN1R0-40ULDX

Description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD
  • N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 - PSMN1R0-40ULDX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R0-40ULDX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 - PSMN1R0-40ULDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595
PSMN1R0-40ULDX
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 PSMN1R0-40ULDX
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications.

Features and benefits

  • Improved creepage and clearance – meets the requirements of UL2595
  • 280 A capability
  • Avalanche rated, 100% tested at IAS = 190 A
  • NextPower-S3 technology delivers 'superfast switching with soft recovery'
  • Low QRR, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
  • High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
  • Low parasitic inductance and resistance

Applications

  • Brushed and brushless motor control
  • Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
  • For non-UL2595 applications please use PSMN1R0-40YLD
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-40ULDXCT-ND
Single FETs, MOSFETs 1727-PSMN1R0-40ULDXCT-ND
MOSFET N-CH 40V 280A LFPAK56

MOSFET N-CH 40V 280A LFPAK56

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-40ULDXDKR-ND
Single FETs, MOSFETs 1727-PSMN1R0-40ULDXDKR-ND
MOSFET N-CH 40V 280A LFPAK56

MOSFET N-CH 40V 280A LFPAK56

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-40ULDXTR-ND
Single FETs, MOSFETs 1727-PSMN1R0-40ULDXTR-ND
N-Channel 40V 280A (Ta) 164W Surface Mount LFPAK56, Power-SO8

N-Channel 40V 280A (Ta) 164W Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PSMN1R0-40ULDX
MOSFET PSMN1R0-40ULDX
MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology

MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R0-40ULDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN1R0-40ULDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN1R0-40ULDX
MOSFET N-CH 40V 280A LFPAK56

MOSFET N-CH 40V 280A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN1R0-40ULDX 1727-PSMN1R0-40ULDXCT-ND PSMN1R0-40ULDX PSMN1R0-40ULDX
Product Name N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 280000 milliamps
VGS(off) 20 volts
PD 164 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 500 mA PNP general-purpose transistors - BC807-25QCZ - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA PNP general-purpose transistors
BC807-25QCZ
Specs
Package Type SOT8009 SOT8009
IC(max) -500 milliamps
VCEO -45 volts
View Details
5 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-40W-QX - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA PNP general-purpose transistors
BC807-40W-QX
Specs
Package Type SOT323; SOT323 SOT323
IC(max) -500 milliamps
VCEO -45 volts
View Details
3 suppliers
P-channel vertical D-MOS intermediate level FET - BSP250,135 - Nexperia B.V.
Nexperia B.V.
P-channel vertical D-MOS intermediate level FET
BSP250,135
Specs
Package Type SOT223; SOT223 SOT223
View Details
4 suppliers
NPN general purpose transistor - 2PD1820AR,115 - Nexperia B.V.
Nexperia B.V.
NPN general purpose transistor
2PD1820AR,115
Specs
Package Type SOT323; SOT323 SOT323
IC(max) 500 milliamps
VCEO 50 volts
View Details
7 suppliers