Nexperia B.V. N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 PSMN1R0-40ULDX

Description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD
  • N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 - PSMN1R0-40ULDX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R0-40ULDX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD
Request a Quote
Datasheet
Datasheet Summary
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N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 (SOT1023A) package, designed for high-performance power switching with improved creepage and clearance to meet UL2595 requirements. The device features NextPower-S3 Schottky-Plus technology, avalanche ruggedness tested at 190 A, and is rated for continuous drain current up to 280 A at 25 °C mounting base temperature with a maximum junction temperature of 150 °C. Static drain-source on-resistance is 1.1 mΩ at 4.5 V gate drive and 25 °C. The package supports wave soldering, has exposed leads for inspection, and low parasitic inductance. Suitable for brushed and brushless motor control and battery-powered appliances requiring UL2595 compliance.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 (SOT1023A) package, designed for high-performance power switching with improved creepage and clearance to meet UL2595 requirements. The device features NextPower-S3 Schottky-Plus technology, avalanche ruggedness tested at 190 A, and is rated for continuous drain current up to 280 A at 25 °C mounting base temperature with a maximum junction temperature of 150 °C. Static drain-source on-resistance is 1.1 mΩ at 4.5 V gate drive and 25 °C. The package supports wave soldering, has exposed leads for inspection, and low parasitic inductance. Suitable for brushed and brushless motor control and battery-powered appliances requiring UL2595 compliance.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 - PSMN1R0-40ULDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595
PSMN1R0-40ULDX
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 PSMN1R0-40ULDX
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. Features and benefits Improved creepage and clearance – meets the requirements of UL2595 280 A capability Avalanche rated, 100% tested at IAS = 190 A NextPower-S3 technology delivers 'superfast switching with soft recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications Brushed and brushless motor control Battery powered appliances where enhanced creepage and clearance is required to meet UL2595 For non-UL2595 applications please use PSMN1R0-40YLD

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications.

Features and benefits

  • Improved creepage and clearance – meets the requirements of UL2595
  • 280 A capability
  • Avalanche rated, 100% tested at IAS = 190 A
  • NextPower-S3 technology delivers 'superfast switching with soft recovery'
  • Low QRR, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
  • High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
  • Low parasitic inductance and resistance

Applications

  • Brushed and brushless motor control
  • Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
  • For non-UL2595 applications please use PSMN1R0-40YLD
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-40ULDXCT-ND
Single FETs, MOSFETs 1727-PSMN1R0-40ULDXCT-ND
MOSFET N-CH 40V 280A LFPAK56

MOSFET N-CH 40V 280A LFPAK56

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-40ULDXDKR-ND
Single FETs, MOSFETs 1727-PSMN1R0-40ULDXDKR-ND
MOSFET N-CH 40V 280A LFPAK56

MOSFET N-CH 40V 280A LFPAK56

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-40ULDXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-40ULDXTR-ND
Single FETs, MOSFETs 1727-PSMN1R0-40ULDXTR-ND
N-Channel 40V 280A (Ta) 164W Surface Mount LFPAK56, Power-SO8

N-Channel 40V 280A (Ta) 164W Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN1R0-40ULDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN1R0-40ULDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN1R0-40ULDX
MOSFET N-CH 40V 280A LFPAK56

MOSFET N-CH 40V 280A LFPAK56

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PSMN1R0-40ULDX
MOSFET PSMN1R0-40ULDX
MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology

MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN1R0-40ULDX 1727-PSMN1R0-40ULDXCT-ND PSMN1R0-40ULDX PSMN1R0-40ULDX
Product Name N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 280000 milliamps
VGS(off) 20 volts
PD 164 milliwatts
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