MOSFET N-CH 30V 100A LFPAK56 Product overview: PSMN2R5-30YL,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN2R5-30YL,115
N-Channel 30V 100A (Tc) 88W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 30V 100A (Tc) 88W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 30V 100A (Tc) 88W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090389-PSMN2R5-30YL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.15V @ 1mA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3468pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
PSMN2R5-30YL - N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK
MOSFET N-CH 30V 100A LFPAK56
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-PSMN2R5-30YL,115 | 1727-4164-6-ND | 1090389-PSMN2R5-30YL,115 | 554-PSMN2R5-30YL,115 | PSMN2R5-30YL,115 |
| Product Name | 30V 100A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R5-30YL,115 | PSMN2R5-30YL - N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| PD | 88 milliwatts | 88000 milliwatts | 88000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
