P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PSMP061-60YE/SOT669/
PSMP061-60YE/SOT669/
PSMP061-60YE/SOT669/
PSMP061-60YE - 60 V, P-channel Trench MOSFET
MOSFET, P-CH, 60V, 25A, LFPAK56 ROHS COMPLIANT: YES
PSMP061-60YE/SOT669/
PSMP061-60YE/SOT669/
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PSMP061-60YEX | 1727-PSMP061-60YEXDKR-ND | PSMP061-60YEX | 93AH0351 | PSMP061-60YEX | PSMP061-60YEX |
| Product Name | 60 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 25A, Lfpak56 Rohs Compliant Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | -60 volts | 60 volts | ||||
| IDSS | -25000 milliamps | 25000 milliamps | ||||
| VGS(off) | 20 volts | |||||
| PD | 66 milliwatts | 66000 milliwatts |