Nexperia B.V. N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN3R5-25MLDX

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
  • N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology - PSMN3R5-25MLDX - Nexperia B.V.
    Nexperia B.V.
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN3R5-25MLDX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
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Datasheet
Datasheet Summary
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N-channel 25 V logic level MOSFET in LFPAK33 package using NextPowerS3 technology, optimized for 4.5 V gate drive. The device has a drain-source on-state resistance of 3.72 mΩ at V_GS = 10 V and 25 °C, with a continuous drain current of 70 A and total power dissipation of 65 W at 25 °C. It features ultra-low gate charge, superfast switching with soft-recovery (s-factor > 1), and Schottky-like performance with leakage below 1 µA at 25 °C. The LFPAK33 package is clip-bonded, has solder die attach, no wire bonds, and is qualified to 175 °C. Exposed leads enable visual solder inspection.

Datasheet Summary
Powered by GS/AI

N-channel 25 V logic level MOSFET in LFPAK33 package using NextPowerS3 technology, optimized for 4.5 V gate drive. The device has a drain-source on-state resistance of 3.72 mΩ at V_GS = 10 V and 25 °C, with a continuous drain current of 70 A and total power dissipation of 65 W at 25 °C. It features ultra-low gate charge, superfast switching with soft-recovery (s-factor > 1), and Schottky-like performance with leakage below 1 µA at 25 °C. The LFPAK33 package is clip-bonded, has solder die attach, no wire bonds, and is qualified to 175 °C. Exposed leads enable visual solder inspection.

Suppliers

Company
Product
Description
Supplier Links
N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology - PSMN3R5-25MLDX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
PSMN3R5-25MLDX
N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN3R5-25MLDX
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C Exposed leads for optimal visual solder inspection Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
Supplier's Site Datasheet
MOSFETs - 219319 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219319
MOSFETs 219319
N-Channel MOSFET, 25V, 3.5A, SOT-23

N-Channel MOSFET, 25V, 3.5A, SOT-23

Supplier's Site
MOSFETs - 219321 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219321
MOSFETs 219321
N-Channel MOSFET, 25V, 3.5A, SOT-23

N-Channel MOSFET, 25V, 3.5A, SOT-23

Supplier's Site
Single FETs, MOSFETs - 1727-PSMN3R5-25MLDXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN3R5-25MLDXTR-ND
Single FETs, MOSFETs 1727-PSMN3R5-25MLDXTR-ND
N-Channel 25V 70A (Tc) 65W (Tc) Surface Mount LFPAK33

N-Channel 25V 70A (Tc) 65W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN3R5-25MLDXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN3R5-25MLDXCT-ND
Single FETs, MOSFETs 1727-PSMN3R5-25MLDXCT-ND
N-Channel 25V 70A (Tc) 65W (Tc) Surface Mount LFPAK33

N-Channel 25V 70A (Tc) 65W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN3R5-25MLDXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN3R5-25MLDXDKR-ND
Single FETs, MOSFETs 1727-PSMN3R5-25MLDXDKR-ND
N-Channel 25V 70A (Tc) 65W (Tc) Surface Mount LFPAK33

N-Channel 25V 70A (Tc) 65W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN3R5-25MLDX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN3R5-25MLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN3R5-25MLDX
MOSFET N-CH 25V 70A LFPAK33

MOSFET N-CH 25V 70A LFPAK33

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PSMN3R5-25MLDX
MOSFET PSMN3R5-25MLDX
MOSFET PSMN3R5-25MLD/MLFPAK /REEL 7" Q

MOSFET PSMN3R5-25MLD/MLFPAK/REEL 7" Q

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN3R5-25MLDX 219319 1727-PSMN3R5-25MLDXTR-ND PSMN3R5-25MLDX PSMN3R5-25MLDX
Product Name N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 25 volts
IDSS 70000 milliamps
VGS(off) 20 volts
PD 65 milliwatts
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