Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R180P7S

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Adapters and chargers
• Complete system solutions for smart TVs
• Cordless power tools and outdoor power equipment
• Energy Storage Systems
• LED strips and signage

Designers who used this product also designed with

• 1ED3120MC12H |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 1ED3120MC12H |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 1ED3120MC12H |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs

1
2

600V CoolMOSª P7 Power Transistor Product overview: IPD60R180P7S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPD60R180P7S can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 825981-IPD60R180P7S
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Limited