The IPD60R180P7S is a 600V CoolMOS™ P7 power MOSFET in a PG-TO252-3 package, designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It features a maximum drain-source on-resistance of 180 mΩ, a pulsed drain current of 53 A, and a gate charge of 25 nC. The device exhibits excellent ESD robustness with a human body model rating above 2 kV and a body diode commutation speed of 900 A/µs. It supports junction temperatures from -40°C to 150°C and has a maximum power dissipation of 72 W at 25°C case temperature. The part is suitable for applications requiring compact design, reduced losses, and high reliability in consumer, industrial, and telecom power systems.
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features
Efficiency
Ease-of-use
Benefits
Efficiency
Ease-of-use
Potential Applications
Applications
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600V CoolMOSª P7 Power Transistor Product overview: IPD60R180P7S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPD60R180P7S can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 825981-IPD60R180P7S
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Limited
TO-252-3 MOSFETs ROHS
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Bipolar RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD60R180P7S | 48-IPD60R180P7S | 825981-IPD60R180P7S | IPD60R180P7S |
| Product Name | 500V-950V N-Channel Power MOSFET | 600V Bipolar Transistor | Misc Products - IPD60R180P7S | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N | |||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.1800 ohms | |||
| QG | 25 nC |
