Infineon Technologies AG Transistors IPD082N10N3G

Description
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1 N-Channel TO-252-3 MOSFETs ROHS
  • Transistors - IPD082N10N3G - ODG (Origin Data Global)
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Description
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1 N-Channel TO-252-3 MOSFETs ROHS
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Transistors - IPD082N10N3G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD082N10N3G
Transistors IPD082N10N3G
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1 N-Channel TO-252-3 MOSFETs ROHS

100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1 N-Channel TO-252-3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPD082N10N3G
Product Name Transistors
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