Infineon Technologies AG Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all...
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease...
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss...
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. Summary...
CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 40 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 7 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 7 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ MOSFET 1200 V, 350 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process is optimized to combine performance with reliability. In comparison to traditional silicon (Si) based...
CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like...
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of...
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that...
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that...
CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,...
CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,...
CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,...
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over...
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering...
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need...
OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in...
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 22 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 39 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 72 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si)...
The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ MOSFET 1700 V, 1000 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power...
The CoolSiC™ MOSFET 1700 V, 450 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power...
The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power...
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and...
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles...
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than...
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling...
The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides...
The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides...
The CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides...
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles...
The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already...

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