Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 1200 V IGBT with anti-parallel diode in TO-247 package High speed 1200 V, 25 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the best compromise... | |
| 1200 V, 15 A IGBT with anti-parallel diode in TO-247 package Hard-switching 1200 V, 15 A high speed TRENCHSTOP™ IGBT6 in a TO-247 package co-packed with a very soft and... | |
| 1200 V, 40 A IGBT with anti-parallel diode in TO-247 package Hard-switching 1200 V, 40 A high speed TRENCHSTOP™ IGBT6 in a TO-247 package co-packed with a soft and fast... | |
| 1200 V, 40 A IGBT with anti-parallel diode in TO-247 package High speed 1200 V, 40 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the... | |
| 1200 V, 40 A IGBT with anti-parallel diode in TO-247-4 package Hard-switching 1200 V, 40 A high speed TRENCHSTOP™ IGBT6 in a TO-247PLUS 4pin package co-packed with a soft and... | |
| 1200 V, 40 A IGBT with anti-parallel diode in TO-247PLUS package Hard-switching 1200 V, 40 A HighSpeed 3 H3 in TO-247PLUS package with soft, fast anti-parallel emitter controlled diode. Summary... | |
| 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers... | |
| 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package Hard-switching 1200 V, 50 A HighSpeed 3 H3 in TO-247PLUS 4pin package. Higher current capability, improved thermal behaviour, extended... | |
| 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package Hard-switching 1200 V, 50 A HighSpeed 3 H3 with anti-parallel diode in TO-247PLUS package. The TO-247PLUS has the same... | |
| 1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers... | |
| 1200 V, 75 A IGBT with anti-parallel diode in TO-247 package Hard-switching 1200 V, 75 A HighSpeed 3 H3 in a TO-247 package co-packed with a soft and fast recovery... | |
| 1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A high speed TRENCHSTOP™ IGBT6 in a TO-247PLUS 4pin package co-packed with a very... | |
| 1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A HighSpeed 3 H3 in TO-247 PLUS package with soft, fast recovery full current... | |
| 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package Hard-switching 1200 V, 8 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers... | |
| 600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 30 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise... | |
| 600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 40 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise... | |
| 600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise... | |
| 600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise... | |
| 600 V, 120 A IGBT discrete with anti-parallel diode in TO-247PLUS package Hard switching 600 V, 120 A TRENCHSTOP™ IGBT technology in a TO-247PLUS package for higher current capability. The... | |
| 600 V, 20 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 600 V, 20 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to... | |
| 600 V, 30 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to... | |
| 600 V, 50 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 600 V, 50 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to... | |
| 650 V IGBT with anti-parallel diode in TO-247 package High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a... | |
| 650 V IGBT with anti-parallel diode in TO-247 package High Speed 650 V, 50 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a... | |
| 650 V, 20 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 20 A TRENCHSTOP™ IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance... | |
| 650 V, 20 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 20 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 30 A TRENCHSTOP™ 5 fast IGBT in a TO-220 package copacked with fast and soft... | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 30 A TRENCHSTOP™ 5 IGBT in a TO-220 package copacked with fast and soft RAPID... | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 30 A TRENCHSTOP™ IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance... | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-247 package High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 40 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance... | |
| 650 V, 40 A IGBT with anti-parallel diode in TO-247 package High speed 650 V, 40 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ | |
| 650 V, 40 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 40 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode 650 V, 50A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in... | |
| 650 V, 50 A IGBT with anti-parallel diode in TO-247 package High speed 650 V, 50 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in TO-247 package. The Reverse Conducting TRENCHSTOP™ | |
| 650 V, 50 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 50 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 60 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 60 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 70 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 70 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. | |
| 650 V, 75 A IGBT Discrete with CoolSiC™ diode 650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package. The... | |
| 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode 650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in... | |
| 650 V, 75 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 75 A high speed TRENCHSTOP™ 5 S5 IGBT in TO-247-4 package with an extra Kelvin emitter... | |
| 650 V, 75 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 75 A TRENCHSTOP™ IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance... | |
| 670 V, 30 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the... | |
| 670 V, 40 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the... | |
| 670 V, 50 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the... | |
| 670 V, 60 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the... | |
| 670 V, 70 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the... | |
| Applications General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) 650 V, 20 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 20... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in a D2PAK-7L package (TO-263-7) build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of... | |
| CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power... | |
| Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications... | |
| Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power... | |
| Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications... | |
| Hard-switching 1200 V, 140 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power... | |
| Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic,... | |
| Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic,... | |
| Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic,... | |
| Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 3pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible... | |
| Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic,... | |
| Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power... | |
| Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power... | |
| Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications... | |
| Hard-switching 650 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247-3 High Creepage Clearance (HCC) package technology has been developed to fulfill the demand in green & efficient energy applications,... | |
| Hard-switching 650 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO247PLUS-3 package has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements... | |
| Hard-switching 650 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO247PLUS-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 150 A TRENCHSTOP™ IGBT7 H7 discrete in TO247PLUS-3 package has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements... | |
| Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247-3 High Creepage Clearance (HCC) package technology has been developed to fulfill the demand in green & efficient energy applications,... | |
| Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247-3 High Creepage Clearance (HCC) package technology has been developed to fulfill the demand in green & efficient energy applications,... | |
| Hard-switching 650 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247-3 High Creepage Clearance (HCC) package technology has been developed to fulfill the demand in green & efficient energy applications,... | |
| Hard-switching 650 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 750 V, 200 A EDT2 discrete in TO-247PLUS SMD package technology has been developed to fulfill the demand in CAV applications such as delivery vehicles, trucks and bus drive... | |
| High speed 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of... | |
| High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of... | |
| High speed 600 V, 60 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of... | |
| High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of... | |
| High Speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650... | |
| Infineon´s 650 V, 40 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles,... | |
| Infineon’s L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of... | |
| SiC MOSFET in compact SMD package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 22 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| The 650 V, 30 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO-247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles,... | |
| The 650 V, 50 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles,... | |
| The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles,... | |
| The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and... | |
| The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings... | |
| The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 26 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits... | |
| The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC... | |
| The CoolSiC™ MOSFET discrete 1200 V, 234 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 8 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already... | |
| To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin... |
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