Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R1K0PFD7S

Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer Charger Adapter Fridge Fans Pumps Applications Refrigerators and freezers Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPD60R1K0PFD7S - Infineon Technologies AG
    Infineon Technologies AG
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Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer Charger Adapter Fridge Fans Pumps Applications Refrigerators and freezers Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPD60R1K0PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a PG-TO-252-3 (DPAK) package, designed for high-efficiency, high-power-density applications such as chargers, adapters, and motor drives. It has a maximum drain-source on-state resistance of 1000 mΩ, a pulsed drain current of 8.8 A, and an integrated fast body diode with a commutation speed of 1300 A/μs. The device features low switching losses, a maximum junction temperature of 150°C, and is qualified to JEDEC standards. Thermal resistance is 4.8 °C/W from junction to case, and 62 °C/W from junction to ambient on a minimal footprint PCB.

Datasheet Summary
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The IPD60R1K0PFD7S is a 600V CoolMOS™ PFD7 superjunction MOSFET in a PG-TO-252-3 (DPAK) package, designed for high-efficiency, high-power-density applications such as chargers, adapters, and motor drives. It has a maximum drain-source on-state resistance of 1000 mΩ, a pulsed drain current of 8.8 A, and an integrated fast body diode with a commutation speed of 1300 A/μs. The device features low switching losses, a maximum junction temperature of 150°C, and is qualified to JEDEC standards. Thermal resistance is 4.8 °C/W from junction to case, and 62 °C/W from junction to ambient on a minimal footprint PCB.

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500V-950V N-Channel Power MOSFET - IPD60R1K0PFD7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD60R1K0PFD7S
500V-950V N-Channel Power MOSFET IPD60R1K0PFD7S
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer Charger Adapter Fridge Fans Pumps Applications Refrigerators and freezers Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1 2

600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.


Summary of Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Potential Applications

  • Consumer
  • Charger
  • Adapter
  • Fridge
  • Fans
  • Pumps

Applications

  • Refrigerators and freezers

Designers who used this product also designed with


  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD60R1K0PFD7S
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1 ohms
QG 6 nC
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