Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 1200 V power IGBT chip The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology... | |
| 1200 V, 15 A IGBT Discrete in TO-247 package 1200 V, 15 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. | |
| 1200 V, 25 A IGBT Discrete in TO-247 package 1200 V, 25 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. | |
| 1200 V, 40 A IGBT Discrete in TO-247 package 1200 V, 40 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. | |
| 1350 V, 20 A IGBT Discrete with anti-parallel diode in TO-247 package The Reverse Conducting R5 1350 V, 20 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a... | |
| 1350 V, 30 A IGBT with anti-parallel diode in TO-247 package The Reverse Conducting R5 1350 V, 30 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247... | |
| 1350 V, 40 A IGBT with anti-parallel diode in TO-247 package The Reverse Conducting R5 1350 V, 40 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247... | |
| 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability The IGO60R070D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive... | |
| 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability This product is not recommended for new designs. Please explore its successor IGLD65R055D2. The IGOT60R070D1 enables more compact... | |
| 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability This product is not recommended for new designs. Please explore its successor IGLD65R055D2. The IGLD60R070D1 offers fast turn-on and... | |
| 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability This product is not recommended for new designs. Please explore its successor IGLD65R140D2 The IGLD60R190D1 offers fast turn-on and... | |
| 600 V CoolGaN™e-mode power transistor for ultimate efficiency and reliability This product is not recommended for new designs. Please explore its successor IGT65R055D2 The IGT60R070D1 enables a more compact topology... | |
| 600 V IGBT with anti-parallel diode in TO263 package High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO263 D2PAK package provides... | |
| 600 V, 10 A IGBT Discrete in TO220 package Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as... | |
| 600 V, 10 A IGBT Discrete with anti-parallel diode in TO220 Full-Pak package Hard-switching 600 V, 10 A TRENCHSTOP™ IGBT3 copacked with full-rated external free-wheeling diode in a TO220 Full-Pak... | |
| 600 V, 10 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package RC Drives 2 600 V, 10 A IGBT Discrete in PG-TO252-3 package. RC-D2 with the monolithically... | |
| 600 V, 15 A IGBT Discrete in TO220 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as... | |
| 600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 Discrete in TO263 D2Pak package, leads to significant improvement of static... | |
| 600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static... | |
| 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package RC Drives 2 600 V, 15 A IGBT Discrete in PG-TO252-3 package. RC-D2 with the monolithically... | |
| 600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak... | |
| 600 V, 20 A IGBT Discrete in TO-247 package High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction... | |
| 600 V, 30 A IGBT Discrete in TO-247 package Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 in TO-247 package for significant improvement of static as well as dynamic performance of... | |
| 600 V, 30 A IGBT Discrete in TO-247 package High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction... | |
| 600 V, 30 A IGBT with anti-parallel diode in TO-247 package Hard-switching 600 V, 30 A high speed TRENCHSTOP™ IGBT3 co-packed with Rapid 1 fast and soft anti-parallel diode in... | |
| 600 V, 30 A IGBT3 in TO220 package High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO220 package provides the best compromise between switching and conduction losses. | |
| 600 V, 30 A IGBT3 in TO263 D2Pak package High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between... | |
| 600 V, 4 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package RC Drives 2 600 V, 4 A IGBT Discrete in PG-TO252-3 package. RC-D2 with the monolithically... | |
| 600 V, 50 A IGBT Discrete in TO-247 package High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction... | |
| 600 V, 50 A IGBT in TO-247 package Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic... | |
| 600 V, 6 A IGBT Discrete in TO220 package Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as... | |
| 600 V, 6 A IGBT Discrete in TO252 package Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as... | |
| 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package RC Drives 2 600 V, 6 A IGBT Discrete in PG-TO252-3 package. RC-D2 with the monolithically... | |
| 650 V IGBT in TO-247 package The 650 V, 50 A hard-switching IGBT TRENCHSTOP™ 5 in TO-247 package redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for... | |
| 650 V, 15 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 15 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode... | |
| 650 V, 15 A IGBT with anti-parallel diode in TO-247 package High Speed 650 V, 15 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in... | |
| 650 V, 15 A IGBT with anti-parallel diode in TO-247 package The 650 V, 15 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single IGBT, addressing... | |
| 650 V, 15 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 15 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current... | |
| 650 V, 20 A IGBT with anti-parallel diode in TO263 package Hard-switching 650 V, 20 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full... | |
| 650 V, 20 A IGBT with anti-parallel diode in TO263 package The 650 V, 20 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single IGBT addressing... | |
| 650 V, 30 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 30 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full... | |
| 650 V, 40 A IGBT Discrete in TO-247 package Hard- switching 650 V, 40 A TRENCHSTOP™5 IGBT discrete in TO-247 package for high efficiency demands. Summary of Features 650V breakthrough... | |
| 650 V, 40 A IGBT in TO-247 advanced isolation package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 H5 IGBT discrete in TO-247 advanced isolation package is the highest efficiency discrete... | |
| 650 V, 40 A IGBT in TO-247 advanced isolation package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 S5 IGBT discrete in TO-247 advanced isolation package addresses applications switching between 10... | |
| 650 V, 40 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT discrete in D2Pak (TO263) package copacked with... | |
| 650 V, 40 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package with full rated... | |
| 650 V, 40 A IGBT with anti-parallel diode in TO263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full... | |
| 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package Reverse Conducting R6 650 V, 40 A IGBT in TO-247 package with monolithically integrated diode is designed to... | |
| 650 V, 50 A IGBT Discrete in TO-263 package High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between... | |
| 650 V, 50 A IGBT Discretes with anti-parallel diode in TO-247 package The Reverse Conducting R5 650 V, 50 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a... | |
| 650 V, 50 A IGBT with anti-parallel diode in TO-263 package High speed 650 V, 50 A hard-switching TRENCHSTOP™ 5 in D2Pak (TO-263) package IGBT, redefines “Best-in-class” | |
| 650 V, 8 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode... | |
| CoolGaN™ bidirectional switch 40 V G3 in WLCSP, 6 mΩ The IGK080B041S is a 40 V normally-off bidirectional power transistor housed in a small WLCSP 1.7x1.7 package, enabling high power... | |
| CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN... | |
| CoolGaN™ bidirectional switch 650 V G5 in TOLT, 55 mΩ The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ | |
| CoolGaN™ Transistor 120 V G3 in PQFN 3x5, 2.7 mΩ The IGC037S12S1 is a 120 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power... | |
| CoolGaN™ Transistor 200 V G3 in PQFN 3x5, 6.7 mΩ The IGC090S20S1 is a 200 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power... | |
| Hard-switching 1200 V, 100 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 120 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 15 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 75 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 8 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 8 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of... | |
| High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO220 package provides the best compromise between switching and conduction losses. The key feature of this family is a... | |
| High speed 600 V, 40 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a... | |
| High speed 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a... | |
| High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features... | |
| IGI60L1111B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in... | |
| IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in... | |
| IGI60L2727B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 270 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in... | |
| IGI60L5050B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 500 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in... | |
| IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package. This product... | |
| Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching... | |
| Infineon’s L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of... | |
| Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation... | |
| MIPAQ™ base 1200 V, 200 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, 0.525 mΩ current sense shunts, Emitter controlled Diode and NTC. Also available with pre-applied Thermal Interface Material. Summary... | |
| MIPAQ™ base 1200 V, 200 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, 0.525 mΩ current sense shunts, Emitter controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Compact... | |
| MIPAQ™ base 1200 V, 200 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, 1.00 mΩ current sense shunts, Emitter controlled Diode and NTC. Summary of Features Compact modules with a height... | |
| MIPAQ™ base 1200 V, 75 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, current sense shunts, emitter controlled 4 diode and NTC. Summary of Features Compact modules with a height of... | |
| MIPAQ™ base 1700V sixpack IGBT Module with Trench/Fieldstop IGBT4, current sense shunts, Emitter controlled Diode, NTC, PressFIT and pre applied Thermal Interface Material. Summary of Features High Power and Thermal... | |
| Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to... | |
| RC Soft Switching 1400 V, 25 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode,... | |
| RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless... | |
| The IGB019S06S1 is a 60 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it... | |
| The IGB070S0S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGB110S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGC025S08S1 is a 80 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it... | |
| The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGC033S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGLD65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGLT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGLT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGOT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGOT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGOT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable... | |
| The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer... | |
| The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology Low switching losses Soft turn-off... | |
| The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy... | |
| The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Positive temperature coefficient Easy paralleling Qualified according to JEDEC for... | |
| To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin... |
| << Prev | Next >> |