Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 100V, N-Ch, 2.4 mΩ max, Automotive MOSFET, sTOLL, OptiMOS™5 The IAUA210N10S5N024 is a 2.4mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next... | |
| 1200 V power IGBT chip The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology... | |
| 120V, N-Ch, 1.7 mΩ max, Automotive MOSFET, TOLL, OptiMOS™ 5 The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. | |
| 600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 Discrete in TO263 D2Pak package, leads to significant improvement of static... | |
| 600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static... | |
| 600 V, 30 A IGBT3 in TO263 D2Pak package High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between... | |
| 650 V, 15 A IGBT with anti-parallel diode in TO-247 package The 650 V, 15 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single IGBT, addressing... | |
| 650 V, 20 A IGBT with anti-parallel diode in TO263 package The 650 V, 20 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single IGBT addressing... | |
| 650 V, 50 A IGBT Discrete in TO-263 package High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between... | |
| 650 V, 50 A IGBT with anti-parallel diode in TO-263 package High speed 650 V, 50 A hard-switching TRENCHSTOP™ 5 in D2Pak (TO-263) package IGBT, redefines “Best-in-class” | |
| A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class... | |
| CoolGaN™ Transistor 120 V G3 in PQFN 3x5, 2.7 mΩ The IGC037S12S1 is a 120 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power... | |
| EconoDUAL™ 3 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 Diode, NTC, integrated shunts, PressFIT contact technology, and pre-applied Thermal Interface Material. Summary of Features... | |
| EconoDUAL™ 3 1200 V, 750 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, integrated shunts and PressFIT contact technology. Summary of Features Highest power density Tvj... | |
| EconoPACK™ 2 1700 V, 300 A dual IGBT Module with TRENCHSTOP™IGBT4, current sense shunts, Emitter controlled Diode, NTC, PressFIT and pre-applied Thermal Interface Material. Summary of Features High Power and... | |
| Hard-switching 1200 V, 15 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| Hard-switching 1200 V, 8 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features... | |
| IAUCN08S7N016T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N019T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N024T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N045T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2... | |
| IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| IAUCN10S7N040 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| IAUCN10S7N074 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It... | |
| Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max... | |
| MIPAQ™ base 1200 V, 100 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, current sense shunts, emitter controlled HE diode and NTC. Summary of Features Compact modules with a height of... | |
| MIPAQ™ base 1200 V, 150 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, current sense shunts, Emitter controlled Diode and NTC. Summary of Features Compact modules with a height of only... | |
| MIPAQ™ base 1200 V, 200 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, 0.525 mΩ current sense shunts, Emitter controlled Diode and NTC. Also available with pre-applied Thermal Interface Material. Summary... | |
| MIPAQ™ base 1200 V, 200 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, 0.525 mΩ current sense shunts, Emitter controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Compact... | |
| MIPAQ™ base 1200 V, 200 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, 1.00 mΩ current sense shunts, Emitter controlled Diode and NTC. Summary of Features Compact modules with a height... | |
| MIPAQ™ base 1200 V, 75 A sixpack IGBT Module with TRENCHSTOP™ IGBT4, current sense shunts, emitter controlled 4 diode and NTC. Summary of Features Compact modules with a height of... | |
| MIPAQ™ base 1700V sixpack IGBT Module with Trench/Fieldstop IGBT4, current sense shunts, Emitter controlled Diode, NTC, PressFIT and pre applied Thermal Interface Material. Summary of Features High Power and Thermal... | |
| New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm²) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers... | |
| New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm2) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers... | |
| Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L006. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L006. Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L009 Designers who... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L011. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L011 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L014. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L014 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L019. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L019 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L028. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L028 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N005. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N005. Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N009 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N012. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N012 Applications Automatic... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N020. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N020 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N030. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N030 Applications Automotive... | |
| Summary of Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical... | |
| Summary of Features N-channel - Enhancement mode - Logic level AEC qualified MSL1 up to 260°C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI) Designers who used... | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Designers who used this... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Designers who... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications 48... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Automotive... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Chassis... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL3 up to 260°C peak reflow 175°C operating... | |
| Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested | |
| Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested Applications... | |
| Summary of Features OptiMOS7 40V ™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow... | |
| Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating... | |
| Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical... | |
| The GS-065-030-6-LL is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled TOLL package, it... | |
| The GS-065-030-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it... | |
| The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-060-5-T-A-TR is a top-side cooled transistor in a... | |
| The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61004B-TR is a bottom-side cooled transistor... | |
| The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor... | |
| The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled... | |
| The GS66516T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516T-TR is a top-side cooled... | |
| The IAUA170N10S5N031 is a 3.1mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like... | |
| The IAUA180N08S5N026 is a 2.6mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as... | |
| The IAUA180N10S5N029 is a 2.9mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like... | |
| The IAUA220N08S5N021 is a 2.1mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as... | |
| The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED... | |
| The IAUC100N10S5L054 is a 5.4mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for... | |
| The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in engine management, wireless charging... | |
| The IAUC40N08S5L140 is a 14mR 80V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and wireless chargers. Summary... | |
| The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor... | |
| The IAUC60N10S5L110 is an 11mR 100V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and DCDC Converters. Summary... | |
| The IAUC64N08S5L075 is a 7.5mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for... | |
| The IAUS300N08S5N011 is a 1.1mR 80V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter... | |
| The IAUS300N08S5N011T is a 1.1mR 80V MOSFET in a TOLT package for Top Side Cooling, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter... | |
| The IAUS300N10S5N014 is a 1.4mR 100V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter... | |
| The IAUT300N08S5N011 is a 1.1mR 80V MOSFET in a leadless TOLL package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter Generators,... | |
| The IAUTN06S5N008 is a 0,76 mΩ, 60V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter. | |
| The IAUTN06S5N008G is a 0.78 mΩ, 60 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV... | |
| The IAUTN12S5N018G is a 1.8 mΩ, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV... | |
| The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in a 3.3 x 3.3 mm² S3O8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in pumps, battery... | |
| The IGB019S06S1 is a 60 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it... | |
| The IGB070S0S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGB110S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGC025S08S1 is a 80 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it... | |
| The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGC033S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The new integrated half-bridge (5mm x 6mm) from Infineon is the innovative and cost efficient package solution for motor drive & body applications. The dual SSO8 5x6 mm2 package... | |
| The new OptiMOS™ 5 technology for 60V MOSFET in the industry standard SSO8 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction... | |
| The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard S3O8 (3x3mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction... | |
| The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing... | |
| The OptiMOS™ 5 technology in the SSO8 (5x6mm2) small footprint package provides leading performance for automotive applications. Summary of Features Copper clips for higher current loading Specifically designed for fast-switching... | |
| This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon. |
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