Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPD60R180CM8 IPD60R180CM8

IPD60R180CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio SMT compatible Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications Designers who used this product also designed with 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDN7550B | Gate driver ICs CYPD3172P-24LQXQ | EZ-PD™ CCG3PA-NFET USB-C PD Controller BSC093N15NS5 | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSZ086P03NS3 G | P-Channel Power MOSFET IRS4427S | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDN7550B | Gate driver ICs CYPD3172P-24LQXQ | EZ-PD™ CCG3PA-NFET USB-C PD Controller BSC093N15NS5 | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET 1 2 3 4