Infineon Technologies AG Single FETs, MOSFETs IPD10N03LA G

The IPD10N03LA G is an N-channel logic-level MOSFET designed for high-frequency dc/dc converters, housed in a PG-TO252-3-11 package. It has a continuous drain current of 30 A, a drain-source breakdown voltage of 25 V, and a maximum on-state resistance of 10.4 mΩ at 10 V gate voltage. The device operates at temperatures up to 175 °C with a thermal resistance junction-to-case of 2.9 K/W, and is RoHS compliant. It meets IEC climatic category 55/175/56 and is qualified to JEDEC standards J-STD-20 and JESD22.