The IPD60N10S4L-12 is an N-channel enhancement mode MOSFET designed for automotive applications with a 100 V drain-source voltage rating and a maximum continuous drain current of 60 A at 25⁰C. It is packaged in a PG-TO252-3-313 case and supports an operating junction temperature range of -55⁰C to +175⁰C. The device features a maximum on-state resistance of 12 mΩ at 10 V gate-source voltage and is 100% avalanche tested with a single-pulse avalanche energy of 120 mJ. It is AEC-Q200 qualified, RoHS compliant, and rated for MSL1 up to 260⁰C peak reflow. Thermal resistance from junction to case is 1.6 K/W.
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Trans MOSFET N-CH 100V 60A T/R Automotive AEC-Q101 Product overview: IPD60N10S4L-12 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60N10S4L-12 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1186160-IPD60N10S4L-
Manufacturer Homepage: www.infineon.com
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET N-Ch 100V 60A DPAK-2
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD60N10S4L-12 | 278-IPD60N10S4L-12 | 1186160-IPD60N10S4L-12 | IPD60N10S4L-12 | IPD60N10S4L-12 |
| Product Name | Automotive MOSFET | Automotive 100V 60A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60N10S4L-12 | Transistors | MOSFET |
| Polarity | N-Channel; N | N-Channel | |||
| Transistor Technology / Material | Si/SiC | ||||
| VGS(off) | 1.1 to 2.1 volts | ||||
| rDS(on) | 0.0120 ohms | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |