Infineon Technologies AG Single FETs, MOSFETs IPC302NE7N3X1SA1

N-channel enhancement mode MOSFET bare die for power applications, with a drain-source breakdown voltage of 75 V, a typical drain-source on-resistance of 1.2 mΩ at V_GS=10 V, and a die size of 6.7 x 4.5 mm². The device is supplied as a sawn-on-foil chip with backside metallization of NiV and frontside metallization of AlCu, and is classified as electrostatic discharge sensitive per MIL-STD-883C.