MOSFET N-CH 600V 6.8A 61W TO252
N-Channel 600V 6.8A (Tc) 61W (Tc) Surface Mount PG-TO252-3-344
N-Channel 600V 6.8A (Tc) 61W (Tc) Surface Mount PG-TO252-3-344
N-Channel 600V 6.8A (Tc) 61W (Tc) Surface Mount PG-TO252-3-344
MOSFET N-CH 600V 6.8A 61W TO252 Product overview: IPD60R1K0CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A, 61W, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, 61W, TO252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R1K0CEAUMA1
MOSFET N-Ch 600V 6.8A CoolMOS CE TO-252
MOSFET N-Ch 600V 6.8A CoolMOS CE TO-252
MOSFET N-Ch 600V 6.8A CoolMOS CE TO-252
Win Source Part Number: 1129978-IPD60R1K0CEA
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-344
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPD60R1K0CE; SP001396896;
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: ROCINFIPD60R1K0CEAUM
Base Product Number: IPD60R1
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 600V, 6.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 6.8A 61W TO252
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD60R1K0CEAUMA1 | 448-IPD60R1K0CEAUMA1CT-ND | 278-IPD60R1K0CEAUMA1 | 1300898P | 1300898 | 1129978-IPD60R1K0CEAUMA1 | IPD60R1K0CEAUMA1 | 34AC1675 | IPD60R1K0CEAUMA1 | IPD60R1K0CEAUMA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 600V 6.8A 61W TO252 MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 600V, 6.8A, To-252; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||||
| IDSS | 6800 milliamps | 6800 milliamps | ||||||||
| PD | 61000 milliwatts | 61 milliwatts |
