Infineon Technologies AG Transistors IPD60R1K0CE

Description
600V 6.8A 1Ω@10V,1.5A 61W 3.5V@130uA 1 N-Channel TO-252-3 MOSFETs ROHS
  • Transistors - IPD60R1K0CE - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
600V 6.8A 1Ω@10V,1.5A 61W 3.5V@130uA 1 N-Channel TO-252-3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - IPD60R1K0CE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD60R1K0CE
Transistors IPD60R1K0CE
600V 6.8A 1Ω@10V,1.5A 61W 3.5V@130uA 1 N-Channel TO-252-3 MOSFETs ROHS

600V 6.8A 1Ω@10V,1.5A 61W 3.5V@130uA 1 N-Channel TO-252-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPD60R1K0CE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRAH - 854965-2N3904RLRAH - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRAH
2N3904RLRAH
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Module - 444050 - Radwell International
Fuji Electric Corp. of America
IGBT Module
2MBI150NB-120
Specs
Transistor Type IGBT
View Details
GaAs Fet Switches - KS204 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS204
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R160M1 - AIMBG120R160M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R160M1
AIMBG120R160M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details