IGBT 600V 75A 370W TO247AC Product overview: IRGP50B60PDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A, 370W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A, 370W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGP50B60PDPBF can be used for catalog matching and distributor lookup.
IGBT NPT 600V 75A 370W Through Hole TO-247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 083424-IRGP50B60PDPB
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 50ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 240nC
Family Name: IRGP50B60PD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 370W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 50A
Total Switching Energy(Ets): 360μJ (on), 380μJ (off)
Turn-on and Turn-off delay time: 34ns/130ns
Testing Conditions: 390V, 33A, 3.3 Ohm, 15V
Alternative Parts (Cross-Reference): STGW45HF60WDI; STGW45HF60WD; STGW30NC60VD;
Introduction Date: December 02, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
IGBT 600V 75A 370W TO247AC
Soft Recovery Diode; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:370W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Transistors 600V Warp2 150kHz
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IRGP50B60PDPBF | IRGP50B60PDPBF-ND | 083424-IRGP50B60PDPBF | IRGP50B60PDPBF | 31K2330 | IRGP50B60PDPBF |
| Product Name | 600V 75A 370W IGBT Transistor | Single IGBTs | IGBTs - Single - IRGP50B60PDPBF | Discrete Semiconductor Products - Transistors - IGBTs | Soft Recovery Diode; Continuous Collector Current Infineon | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | TO-247; TO-247-3 | TO-247; SOT3; TO-247AC | TO-3 | ||
| Packing Method | Tube | Tube | Bulk; Bulk | Tube; Tube |
